DE69827902D1 - Optische Vorrichtung und Herstellungsverfahren - Google Patents
Optische Vorrichtung und HerstellungsverfahrenInfo
- Publication number
- DE69827902D1 DE69827902D1 DE69827902T DE69827902T DE69827902D1 DE 69827902 D1 DE69827902 D1 DE 69827902D1 DE 69827902 T DE69827902 T DE 69827902T DE 69827902 T DE69827902 T DE 69827902T DE 69827902 D1 DE69827902 D1 DE 69827902D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- optical device
- optical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0236—Fixing laser chips on mounts using an adhesive
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0237—Fixing laser chips on mounts by soldering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18341—Intra-cavity contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
- H01S5/423—Arrays of surface emitting lasers having a vertical cavity
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP28254997 | 1997-09-30 | ||
JP28254997 | 1997-09-30 | ||
JP26895198 | 1998-09-07 | ||
JP10268951A JPH11168263A (ja) | 1997-09-30 | 1998-09-07 | 光デバイス装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69827902D1 true DE69827902D1 (de) | 2005-01-05 |
DE69827902T2 DE69827902T2 (de) | 2005-12-22 |
Family
ID=26548547
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69827902T Expired - Lifetime DE69827902T2 (de) | 1997-09-30 | 1998-09-28 | Optische Vorrichtung und Herstellungsverfahren |
Country Status (4)
Country | Link |
---|---|
US (2) | US6507594B1 (de) |
EP (1) | EP0905833B1 (de) |
JP (1) | JPH11168263A (de) |
DE (1) | DE69827902T2 (de) |
Families Citing this family (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU2844400A (en) * | 1998-12-29 | 2000-07-31 | Corning Incorporated | Method for fabricating an optical device using purified adhesives in the opticalpath |
JP3656464B2 (ja) | 1999-06-15 | 2005-06-08 | 日産自動車株式会社 | 先行車追従制御装置 |
JP3990846B2 (ja) * | 1999-08-27 | 2007-10-17 | キヤノン株式会社 | 面型光素子、その製造方法、およびこれを用いた装置 |
JP2001085789A (ja) * | 1999-09-13 | 2001-03-30 | Furukawa Electric Co Ltd:The | 面発光型半導体レーザ素子及びその製造方法 |
DE10018043A1 (de) * | 2000-04-07 | 2001-10-11 | Jenoptik Jena Gmbh | Verfahren zur Kontaktierung eines Hochleistungsdiodenlaserbarrens und eine Hochleistungsdiodenlaserbarren-Kontakt-Anordnung von elektrischen Kontakten thermisch untergeordneter Funktion |
JP3793413B2 (ja) | 2000-11-21 | 2006-07-05 | シャープ株式会社 | 半導体レーザ装置の製造方法 |
TW521448B (en) | 2001-03-09 | 2003-02-21 | Seiko Epson Corp | Method of fabricating surface-emission type light-emitting device, surface-emitting semiconductor laser, method of fabricating the same, optical module and optical transmission device |
AU2002237203A1 (en) * | 2001-03-09 | 2002-09-24 | Danmarks Tekniske Universitet | Mode control using transversal bandgap structure in vcsels |
US7211828B2 (en) * | 2001-06-20 | 2007-05-01 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and electronic apparatus |
TW548860B (en) * | 2001-06-20 | 2003-08-21 | Semiconductor Energy Lab | Light emitting device and method of manufacturing the same |
TW546857B (en) * | 2001-07-03 | 2003-08-11 | Semiconductor Energy Lab | Light-emitting device, method of manufacturing a light-emitting device, and electronic equipment |
JP4166455B2 (ja) * | 2001-10-01 | 2008-10-15 | 株式会社半導体エネルギー研究所 | 偏光フィルム及び発光装置 |
JP3833179B2 (ja) * | 2002-02-13 | 2006-10-11 | キヤノン株式会社 | 光波長変換装置、及び光波長変換方法 |
US20030152125A1 (en) * | 2002-02-13 | 2003-08-14 | Junichi Kinoshita | Surface emitting laser and semiconductor light emitting device |
TWI362128B (en) * | 2002-03-26 | 2012-04-11 | Semiconductor Energy Lab | Light emitting device and method of manufacturing the same |
US7164155B2 (en) * | 2002-05-15 | 2007-01-16 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US7710019B2 (en) | 2002-12-11 | 2010-05-04 | Samsung Electronics Co., Ltd. | Organic light-emitting diode display comprising auxiliary electrodes |
JP3927913B2 (ja) * | 2003-03-05 | 2007-06-13 | キヤノン株式会社 | 光電気混載装置、及びその駆動方法 |
US7012942B2 (en) * | 2003-08-01 | 2006-03-14 | Eastman Kodak Company | Modulating the properties of the gain region at spaced locations in an organic vertical cavity laser array device |
JP4785392B2 (ja) * | 2004-03-26 | 2011-10-05 | キヤノン株式会社 | テラヘルツ電磁波の発生素子の製造方法 |
US7615787B2 (en) * | 2004-03-26 | 2009-11-10 | Canon Kabushiki Kaisha | Photo-semiconductor device and method of manufacturing the same |
FR2868877B1 (fr) * | 2004-04-13 | 2008-08-01 | Intexys Sa | Composants lasers a comportement thermique ameliore et procede de fabrication |
JP2006049281A (ja) * | 2004-06-30 | 2006-02-16 | Canon Inc | 基板の製造方法、基板の製造装置、画像表示装置の製造方法及び画像表示装置 |
JP3913253B2 (ja) * | 2004-07-30 | 2007-05-09 | キヤノン株式会社 | 光半導体装置およびその製造方法 |
US7736964B2 (en) * | 2004-11-22 | 2010-06-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and method for manufacturing the same |
US20060137901A1 (en) * | 2004-12-29 | 2006-06-29 | Gang Yu | Electronic device including a substrate structure and a process for forming the same |
US20070290196A1 (en) * | 2005-07-08 | 2007-12-20 | Samsung Sdi Co., Ltd. | Organic light emitting display device and method for manufacturing the organic light emitting display device |
JP5196779B2 (ja) * | 2006-03-17 | 2013-05-15 | キヤノン株式会社 | 光伝導素子及びセンサ装置 |
JP4857027B2 (ja) * | 2006-05-31 | 2012-01-18 | キヤノン株式会社 | レーザ素子 |
JP5127430B2 (ja) * | 2007-12-25 | 2013-01-23 | キヤノン株式会社 | レーザ素子 |
DE102008022793B4 (de) * | 2008-05-08 | 2010-12-16 | Universität Ulm | Vollständig selbstjustierter oberflächenemittierender Halbleiterlaser für die Oberflächenmontage mit optimierten Eigenschaften |
JP5521478B2 (ja) * | 2008-10-22 | 2014-06-11 | 日亜化学工業株式会社 | 窒化物半導体発光素子の製造方法及び窒化物半導体発光素子 |
JP6062640B2 (ja) | 2011-03-18 | 2017-01-18 | キヤノン株式会社 | 光伝導素子 |
KR101513642B1 (ko) * | 2013-08-21 | 2015-04-20 | 엘지전자 주식회사 | 반도체 디바이스 |
JP6362026B2 (ja) * | 2014-05-13 | 2018-07-25 | 株式会社リコー | レーザ装置、レーザ加工機及び表示装置 |
DE102017118349B4 (de) | 2016-08-12 | 2023-09-07 | Analog Devices, Inc. | Optische emitterbaugruppen |
KR102160549B1 (ko) * | 2016-09-19 | 2020-09-28 | 애플 인크. | 실리콘 제어 백플레인 상에 통합된 수직 이미터 |
CN110178276B (zh) | 2017-01-16 | 2020-12-29 | 苹果公司 | 在同一基板上组合不同散度的发光元件 |
US11381060B2 (en) | 2017-04-04 | 2022-07-05 | Apple Inc. | VCSELs with improved optical and electrical confinement |
US11710942B2 (en) | 2017-12-13 | 2023-07-25 | Sony Corporation | Method of manufacturing light-emitting module, light-emitting module, and device |
WO2020172077A1 (en) | 2019-02-21 | 2020-08-27 | Apple Inc. | Indium-phosphide vcsel with dielectric dbr |
WO2020205166A1 (en) | 2019-04-01 | 2020-10-08 | Apple Inc. | Vcsel array with tight pitch and high efficiency |
US11374381B1 (en) | 2019-06-10 | 2022-06-28 | Apple Inc. | Integrated laser module |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62165886A (ja) | 1986-01-18 | 1987-07-22 | 日立化成工業株式会社 | 回路の接続部材 |
US4780371A (en) | 1986-02-24 | 1988-10-25 | International Business Machines Corporation | Electrically conductive composition and use thereof |
JPS62260877A (ja) | 1986-04-17 | 1987-11-13 | Kawakami Toryo Kk | 異方導電性接着剤 |
US5258577A (en) | 1991-11-22 | 1993-11-02 | Clements James R | Die mounting with uniaxial conductive adhesive |
EP0560072A3 (de) * | 1992-03-13 | 1993-10-06 | Nitto Denko Corporation | Anisotropisch-elektroleitende Klebe-Schicht und diese verwendende Verbindungsstruktur |
JP3194503B2 (ja) | 1992-06-04 | 2001-07-30 | キヤノン株式会社 | 化合物半導体装置及びその製造方法 |
US5431571A (en) * | 1993-11-22 | 1995-07-11 | W. L. Gore & Associates, Inc. | Electrical conductive polymer matrix |
JP2737647B2 (ja) * | 1994-03-10 | 1998-04-08 | カシオ計算機株式会社 | 異方導電性接着剤およびそれを用いた導電接続構造 |
JPH07283486A (ja) | 1994-04-05 | 1995-10-27 | Nippon Telegr & Teleph Corp <Ntt> | 面発光レーザ実装構造 |
US5637176A (en) | 1994-06-16 | 1997-06-10 | Fry's Metals, Inc. | Methods for producing ordered Z-axis adhesive materials, materials so produced, and devices, incorporating such materials |
JP2795627B2 (ja) | 1994-09-28 | 1998-09-10 | 松下電器産業株式会社 | 垂直共振器型面発光レーザを有する光モジュール及びその製造方法 |
US5796714A (en) * | 1994-09-28 | 1998-08-18 | Matsushita Electric Industrial Co., Ltd. | Optical module having a vertical-cavity surface-emitting laser |
US5789278A (en) * | 1996-07-30 | 1998-08-04 | Micron Technology, Inc. | Method for fabricating chip modules |
JP3559680B2 (ja) | 1997-04-25 | 2004-09-02 | キヤノン株式会社 | リング共振器型面発光半導体レーザ及びその製造法 |
JPH11154774A (ja) | 1997-08-05 | 1999-06-08 | Canon Inc | 面発光半導体デバイスの製造方法、この方法によって製造された面発光半導体デバイス及びこのデバイスを用いた表示装置 |
US6011307A (en) * | 1997-08-12 | 2000-01-04 | Micron Technology, Inc. | Anisotropic conductive interconnect material for electronic devices, method of use and resulting product |
JPH11168262A (ja) | 1997-09-30 | 1999-06-22 | Canon Inc | 面型光デバイス、その製造方法、および表示装置 |
-
1998
- 1998-09-07 JP JP10268951A patent/JPH11168263A/ja not_active Withdrawn
- 1998-09-23 US US09/158,820 patent/US6507594B1/en not_active Expired - Fee Related
- 1998-09-28 DE DE69827902T patent/DE69827902T2/de not_active Expired - Lifetime
- 1998-09-28 EP EP98118346A patent/EP0905833B1/de not_active Expired - Lifetime
-
2002
- 2002-09-16 US US10/243,771 patent/US6771677B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20030016715A1 (en) | 2003-01-23 |
EP0905833A2 (de) | 1999-03-31 |
DE69827902T2 (de) | 2005-12-22 |
EP0905833B1 (de) | 2004-12-01 |
EP0905833A3 (de) | 2001-10-10 |
US6507594B1 (en) | 2003-01-14 |
US6771677B2 (en) | 2004-08-03 |
JPH11168263A (ja) | 1999-06-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69827902D1 (de) | Optische Vorrichtung und Herstellungsverfahren | |
DE69828471D1 (de) | Oberflächenartige optische Vorrichtung und Herstellungsverfahren | |
DE69811861D1 (de) | Optisches herstellungsverfahren und - gerät | |
DE69511810T2 (de) | Optische Halbleitervorrichtung und Herstellungsverfahren | |
DE69719117T2 (de) | Optische Vorrichtung | |
DE69839654D1 (de) | Optische Verzögerungsvorrichtung und entsprechendes Verfahren | |
DE69631477D1 (de) | Optisches verfahren und vorrichtung | |
DE69527039T2 (de) | Lichtempfindliche vorrichtung | |
DE69932017D1 (de) | Optisches Abtastgerät und optische Vorrichtung | |
DE69431318D1 (de) | Optische Verrichtungen, integrierte optische Vorrichtungen und Herstellungsverfahren derselben | |
DE69636403D1 (de) | Spektrometrie und optisches Messverfahren und Vorrichtung | |
DE69532083D1 (de) | Optische vorrichtung | |
DE69621538T2 (de) | Optische Vorrichtung | |
DE69530900D1 (de) | Optische Vorrichtung | |
DE69524794D1 (de) | Optische Halbleitervorrichtung und Herstellungsverfahren | |
DE69735327D1 (de) | Optische Halbleitervorrichtung und Herstellungsverfahren | |
DE69408743T2 (de) | Optische Kopplungsvorrichtung und zugehörige Herstellungsmethode | |
DE69933176D1 (de) | Optische Wellenleitervorrichtung und deren Herstellungsverfahren | |
DE69535427D1 (de) | Optische Anordnung und Herstellungsverfahren dafür | |
DE69722339D1 (de) | Optische Vorrichtung | |
DE69738906D1 (de) | Optische vorrichtung | |
DE69728708D1 (de) | Optische Vorrichtung | |
DE69713740D1 (de) | Optische vorrichtung | |
DE69635494D1 (de) | Optisches steuerungsverfahren und optische steuerungsvorrichtung | |
DE69520901T2 (de) | Optische Vorrichtung |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |