DE69532083D1 - Optische vorrichtung - Google Patents

Optische vorrichtung

Info

Publication number
DE69532083D1
DE69532083D1 DE69532083T DE69532083T DE69532083D1 DE 69532083 D1 DE69532083 D1 DE 69532083D1 DE 69532083 T DE69532083 T DE 69532083T DE 69532083 T DE69532083 T DE 69532083T DE 69532083 D1 DE69532083 D1 DE 69532083D1
Authority
DE
Germany
Prior art keywords
optical device
optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69532083T
Other languages
English (en)
Other versions
DE69532083T2 (de
Inventor
Arthur Davies
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
IPG Photonics Corp
Original Assignee
British Telecommunications PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by British Telecommunications PLC filed Critical British Telecommunications PLC
Publication of DE69532083D1 publication Critical patent/DE69532083D1/de
Application granted granted Critical
Publication of DE69532083T2 publication Critical patent/DE69532083T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H01S5/0608—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H01S5/5054—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 in which the wavelength is transformed by non-linear properties of the active medium, e.g. four wave mixing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H01S5/509—Wavelength converting amplifier, e.g. signal gating with a second beam using gain saturation
DE69532083T 1994-09-14 1995-09-14 Optische vorrichtung Expired - Lifetime DE69532083T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
EP94306753 1994-09-14
EP94306753 1994-09-14
GB9425729 1994-12-20
GBGB9425729.2A GB9425729D0 (en) 1994-09-14 1994-12-20 Otical device
PCT/GB1995/002191 WO1996009668A1 (en) 1994-09-14 1995-09-14 Optical device

Publications (2)

Publication Number Publication Date
DE69532083D1 true DE69532083D1 (de) 2003-12-11
DE69532083T2 DE69532083T2 (de) 2004-08-26

Family

ID=26137289

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69532083T Expired - Lifetime DE69532083T2 (de) 1994-09-14 1995-09-14 Optische vorrichtung

Country Status (7)

Country Link
US (1) US5917972A (de)
EP (1) EP0781465B1 (de)
JP (1) JP3895370B2 (de)
CA (1) CA2199510C (de)
DE (1) DE69532083T2 (de)
GB (1) GB9425729D0 (de)
WO (1) WO1996009668A1 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2760850B1 (fr) * 1997-03-13 1999-04-16 Alsthom Cge Alcatel Procede de fabrication de circuits optiques integres permettant de minimiser les pertes optiques de couplage
JP3244114B2 (ja) * 1997-08-18 2002-01-07 日本電気株式会社 半導体光アンプ
FR2768524B1 (fr) * 1997-09-12 1999-10-22 France Telecom Amplificateur a large surface avec recombineur a interferences multimodes
JP3045115B2 (ja) * 1997-09-30 2000-05-29 日本電気株式会社 光半導体装置の製造方法
US6034380A (en) * 1997-10-07 2000-03-07 Sarnoff Corporation Electroluminescent diode with mode expander
FR2770938B1 (fr) * 1997-11-10 1999-12-10 Alsthom Cge Alcatel Amplificateur optique semi-conducteur et source laser integree l'incorporant
US6819687B1 (en) * 1997-12-10 2004-11-16 Nellcor Puritan Bennett Incorporated Non-imaging optical corner turner
FR2779838B1 (fr) * 1998-06-15 2000-08-04 Alsthom Cge Alcatel Composant optique a semiconducteur et amplificateur et convertisseur de longueurs d'onde constitues par ce composant
FR2786278B1 (fr) * 1998-11-24 2001-01-26 Cit Alcatel Composant optique a semi-conducteur comportant un adapteur de mode
US6614585B1 (en) 1999-05-06 2003-09-02 Trumpf Photonics Inc. Phase conjugating structure for mode matching in super luminescent diode cavities
SE9902916L (sv) * 1999-08-16 2001-02-17 Ericsson Telefon Ab L M Modulator och integrerad krets
EP1272878B1 (de) * 2000-02-25 2004-10-27 Trumpf Photonics, Inc. Hochleistungs-superleuchtdiode mit einem gekrümmten mehrfachdurchgangs-wellenleiter
SE521023C2 (sv) * 2000-07-07 2003-09-23 Ericsson Telefon Ab L M Optisk anordning samt framställning därav
IES20000820A2 (en) * 2000-10-11 2002-05-29 Nat Univ Ireland A single frequency laser
US20020176152A1 (en) * 2001-05-04 2002-11-28 Paola Parolari Intensity modulation of optical signals
KR100393193B1 (ko) * 2001-09-29 2003-07-31 삼성전자주식회사 광 도파로와 ｍｅｍｓ 액추에이터를 구비한 가변 광 감쇠기
KR100446524B1 (ko) * 2002-11-25 2004-09-04 삼성전자주식회사 파장분할 다중화/역다중화기
EP1624325B1 (de) * 2004-08-03 2013-05-22 STMicroelectronics Srl Integrierte optische Struktur, empfindlich auf die in den Mantel eines planaren Lichtwellenleiterschaltkreises abgestrahlte Energie
EP1840607B1 (de) * 2005-01-20 2013-11-06 Fujitsu Ltd. Optisches wellenleiterbauelement und halbleiterbauelement
US8615029B2 (en) * 2009-12-30 2013-12-24 Ipg Photonics Corporation Optical device
US10758886B2 (en) 2015-09-14 2020-09-01 Arizona Board Of Regents On Behalf Of Arizona State University Conditioned surfaces for in situ molecular array synthesis
EP3472181A4 (de) 2016-06-20 2020-05-13 Healthtell Inc. Verfahren zur diagnose und behandlung von autoimmunerkrankungen
EP3472201A4 (de) 2016-06-20 2020-05-13 Healthtell Inc. Verfahren zur differentiellen diagnose von autoimmunerkrankungen
WO2018045300A1 (en) * 2016-09-01 2018-03-08 Luxtera, Inc. Method and system for a vertical junction high-speed phase modulator
EP3538893A4 (de) 2016-11-11 2020-09-23 Healthtell Inc. Verfahren zur identifizierung von biomarker-kandidaten
CN110537302B (zh) * 2017-04-04 2021-06-15 三菱电机株式会社 半导体装置、半导体装置的制造方法
US20230088485A1 (en) * 2021-09-23 2023-03-23 Freedom Photonics Llc Segmented contact for current control in semiconductor lasers and optical amplifiers

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5850790A (ja) * 1981-09-19 1983-03-25 Mitsubishi Electric Corp 光半導体デバイス
JPS59154089A (ja) * 1983-02-22 1984-09-03 Sony Corp 半導体レ−ザ−
FR2598862B1 (fr) * 1986-05-16 1994-04-08 Bouley Jean Claude Laser a semi-conducteur a reaction distribuee et a longueur d'onde continument accordable.
US4815084A (en) * 1987-05-20 1989-03-21 Spectra Diode Laboratories, Inc. Semiconductor laser with integrated optical elements
JPH03284892A (ja) * 1990-03-30 1991-12-16 Fujitsu Ltd 光増幅装置
JP2839699B2 (ja) * 1990-11-08 1998-12-16 株式会社東芝 進行波型光増幅器
US5140651A (en) * 1991-06-27 1992-08-18 The United States Of America As Represented By The Secretary Of The Air Force Semiconductive guided-wave programmable optical delay lines using electrooptic fabry-perot elements
US5179568A (en) * 1991-08-28 1993-01-12 The United States Of America As Represented By The United States National Aeronautics And Space Administration Self-collimated unstable resonator semiconductor laser
US5392308A (en) * 1993-01-07 1995-02-21 Sdl, Inc. Semiconductor laser with integral spatial mode filter
DE4322164A1 (de) * 1993-07-03 1995-01-12 Ant Nachrichtentech Optoelektronisches Bauelement mit Rückkopplungsgitter, mit axial quasi-kontinuierlich und nahezu beliebig variierbarem Gitterkopplungs-Koeffizienten, mit quasi-kontinuierlich axial verteilbarer Brechungsindex-Variation, sowie mit axial nahezu beliebig verteilbarer und variierbarer Phasenverschiebung
FR2709566B1 (fr) * 1993-09-02 1995-09-29 Alcatel Nv Composant optique actif semiconducteur à ruban.
US5517517A (en) * 1994-06-30 1996-05-14 At&T Corp. Semiconductor laser having integrated waveguiding lens
BR0206919A (pt) * 2001-02-02 2004-07-06 Conjuchem Inc Derivados de fator de liberação de hormÈnio de crescimento de longa duração

Also Published As

Publication number Publication date
GB9425729D0 (en) 1995-02-22
JPH10505954A (ja) 1998-06-09
CA2199510A1 (en) 1996-03-28
JP3895370B2 (ja) 2007-03-22
EP0781465A1 (de) 1997-07-02
DE69532083T2 (de) 2004-08-26
WO1996009668A1 (en) 1996-03-28
EP0781465B1 (de) 2003-11-05
US5917972A (en) 1999-06-29
CA2199510C (en) 2001-02-20

Similar Documents

Publication Publication Date Title
DE69719117D1 (de) Optische Vorrichtung
DE69428861D1 (de) Optische vorrichtung
DE69429466T2 (de) Optische Vorrichtung
DE69532083D1 (de) Optische vorrichtung
DE69523104D1 (de) Phasengekoppelte optische vorrichtung
DE69128103D1 (de) Optische Vorrichtung
DE69129817T2 (de) Optische Vorrichtung
DE69131485T2 (de) Optische vorrichtung
DE69621538D1 (de) Optische Vorrichtung
DE69530900D1 (de) Optische Vorrichtung
DE69219104D1 (de) Optische vorrichtung
DE69420628D1 (de) Rein optische Vorrichtung
DE69419370T2 (de) Optische Vorrichtung
DE69124504D1 (de) Optische vorrichtung
DE69722339D1 (de) Optische Vorrichtung
DE69738906D1 (de) Optische vorrichtung
DE69713740D1 (de) Optische vorrichtung
DE69728708D1 (de) Optische Vorrichtung
DE69520901T2 (de) Optische Vorrichtung
DE69830990D1 (de) Optische vorrichtung
DE19781041T1 (de) Optische Vorrichtung
DE69928157D1 (de) Optische Vorrichtung
DE69425050D1 (de) Optische vorrichtung
DE69534560D1 (de) Optische Rangierverteiler
DE69840700D1 (de) Optische vorrichtung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: IPG PHOTONICS CORP., OXFORD, MASS., US