SE9902916L - Modulator och integrerad krets - Google Patents
Modulator och integrerad kretsInfo
- Publication number
- SE9902916L SE9902916L SE9902916A SE9902916A SE9902916L SE 9902916 L SE9902916 L SE 9902916L SE 9902916 A SE9902916 A SE 9902916A SE 9902916 A SE9902916 A SE 9902916A SE 9902916 L SE9902916 L SE 9902916L
- Authority
- SE
- Sweden
- Prior art keywords
- waveguide
- modulator
- semiconductor material
- refractive index
- cover layer
- Prior art date
Links
- 239000000463 material Substances 0.000 abstract 4
- 239000004065 semiconductor Substances 0.000 abstract 4
- 239000002184 metal Substances 0.000 abstract 3
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0265—Intensity modulators
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/06—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 integrated waveguide
- G02F2201/063—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 integrated waveguide ridge; rib; strip loaded
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/38—Anti-reflection arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Engineering & Computer Science (AREA)
- Biophysics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Semiconductor Lasers (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9902916A SE9902916L (sv) | 1999-08-16 | 1999-08-16 | Modulator och integrerad krets |
TW88120022A TW464917B (en) | 1999-08-16 | 1999-11-17 | Modulator and integrated circuit |
PCT/SE2000/001547 WO2001013479A1 (en) | 1999-08-16 | 2000-08-04 | Modulator and integrated circuit |
AU64869/00A AU6486900A (en) | 1999-08-16 | 2000-08-04 | Modulator and integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9902916A SE9902916L (sv) | 1999-08-16 | 1999-08-16 | Modulator och integrerad krets |
Publications (2)
Publication Number | Publication Date |
---|---|
SE9902916D0 SE9902916D0 (sv) | 1999-08-16 |
SE9902916L true SE9902916L (sv) | 2001-02-17 |
Family
ID=20416677
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE9902916A SE9902916L (sv) | 1999-08-16 | 1999-08-16 | Modulator och integrerad krets |
Country Status (4)
Country | Link |
---|---|
AU (1) | AU6486900A (sv) |
SE (1) | SE9902916L (sv) |
TW (1) | TW464917B (sv) |
WO (1) | WO2001013479A1 (sv) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002005398A1 (en) * | 2000-07-07 | 2002-01-17 | Telefonaktiebolaget Lm Ericsson | Optical device and fabrication thereof |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002164622A (ja) * | 2000-11-22 | 2002-06-07 | Toshiba Electronic Engineering Corp | 半導体光素子 |
JP4660999B2 (ja) * | 2001-08-01 | 2011-03-30 | パナソニック株式会社 | 光導波路デバイス及びコヒーレント光源及び光学装置 |
KR100424461B1 (ko) * | 2001-09-05 | 2004-03-26 | 삼성전자주식회사 | 전계 흡수 변조형 레이저 모듈을 위한 본딩 패드 및 그 제조 방법 |
SE0200750D0 (sv) | 2002-03-13 | 2002-03-13 | Optillion Ab | Method for manufacturing av photonic device and a photonic device |
SE0200751D0 (sv) | 2002-03-13 | 2002-03-13 | Optillion Ab | Method for manufacturing a photonic device and photonic device |
KR100493089B1 (ko) * | 2002-12-17 | 2005-06-02 | 삼성전자주식회사 | 집적광학장치 |
GB2419033B (en) * | 2004-10-08 | 2009-12-09 | Agilent Technologies Inc | An integrated modulator / laser assembly and a method of producing same |
CN110914745A (zh) * | 2017-08-01 | 2020-03-24 | 三菱电机株式会社 | 光半导体元件的制造方法及光半导体元件 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2746065B2 (ja) * | 1993-07-29 | 1998-04-28 | 日本電気株式会社 | 光半導体素子の製造方法 |
US5432123A (en) * | 1993-11-16 | 1995-07-11 | At&T Corp. | Method for preparation of monolithically integrated devices |
GB9425729D0 (en) * | 1994-09-14 | 1995-02-22 | British Telecomm | Otical device |
JP3674806B2 (ja) * | 1997-05-01 | 2005-07-27 | 日本電信電話株式会社 | 半導体光導波路機能素子 |
-
1999
- 1999-08-16 SE SE9902916A patent/SE9902916L/sv not_active Application Discontinuation
- 1999-11-17 TW TW88120022A patent/TW464917B/zh not_active IP Right Cessation
-
2000
- 2000-08-04 WO PCT/SE2000/001547 patent/WO2001013479A1/en active Application Filing
- 2000-08-04 AU AU64869/00A patent/AU6486900A/en not_active Abandoned
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002005398A1 (en) * | 2000-07-07 | 2002-01-17 | Telefonaktiebolaget Lm Ericsson | Optical device and fabrication thereof |
Also Published As
Publication number | Publication date |
---|---|
SE9902916D0 (sv) | 1999-08-16 |
AU6486900A (en) | 2001-03-13 |
TW464917B (en) | 2001-11-21 |
WO2001013479A1 (en) | 2001-02-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
NAV | Patent application has lapsed |