JP3913253B2 - 光半導体装置およびその製造方法 - Google Patents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3581—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S1/00—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range
- H01S1/02—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range solid
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- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
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- Optics & Photonics (AREA)
- Immunology (AREA)
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- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
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- Light Receiving Elements (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
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Description
2、55、73 絶縁体
3、42a,b、51a,b 光導波路
4、21、22、53a,b、65,66,67,68,69、71、72、89、91 半導体膜
5、43a,b、54、84 伝送線路
6、44a,b、82 アンテナ
7、10、52a,b、57a,b、74,75、80、87、88 電極
8 電源
9、35、46 電磁波
11、90 窓部
12 切りかき部
23 チップ
30 レーザ
31,34、40、90 集積素子
32 レンズ
33、45 検体
36、49 分岐部
37 ミラー
38、50 遅延系
47a,b 光伝導素子
48 半導体レーザ
56 ホール部
83 アンテナ給電部
85 低域通過フィルタ
86 光照射部
92,93 放物面鏡
94 検出器
95 ミラー
96 レンズ
97 光
98 テラヘルツ電磁波
Claims (9)
- 光半導体装置であって、
光伝導性のある半導体膜と、
前記半導体膜の膜厚方向に電界を印加するための一対の電極とを備え、
前記電界が印加された領域に、光を吸収させることで前記半導体膜中に発生したキャリアの移動によって電磁波を前記半導体膜から発生させることを特徴とする光半導体装置。 - 前記電極は半導体膜を膜厚方向に挟むように配置されていることを特徴とする請求項1記載の光半導体装置。
- 前記光伝導性のある半導体膜は、III−V族半導体膜であることを特徴とする請求項1記載の光半導体装置。
- 前記光伝導性のある半導体膜の少なくとも一方の面には、導電型およびエネルギーバンドギャップの異なる半導体が積層されてなることを特徴とする請求項1記載の光半導体装置。
- 前記半導体膜より発生した電磁波を伝搬する伝送路が連続して形成され、前記伝送路を構成する金属が、前記電極の少なくとも1つと電気的に接続されていることを特徴とする請求項1記載の光半導体装置。
- 前記半導体膜から発生した電磁波を空間に放射するためのアンテナ又は空間を伝播してきた電磁波を受信するためのアンテナを備えることを特徴とする請求項1記載の光半導体装置。
- 前記半導体膜の電界を印加される領域に前記半導体膜の側面より光を照射するための光導波路を備えていることを特徴とする請求項1記載の光半導体装置。
- 電界を印加するための膜厚方向において上部に配置された電極近傍の前記半導体膜の領域に、空間伝搬によって上方から光照射を行うことで、前記半導体膜から電磁波を発生させることを特徴とする請求項2記載の光半導体装置。
- 第1の半導体基板に犠牲層をエピタキシャル成長する工程と、
光伝導性のある半導体膜をエピタキシャル成長する工程と、
前記半導体膜表面に電極を形成する工程と、
第2の基板に電極を形成する工程と、
前記半導体膜表面の電極と第2の基板の電極とを接触させて接着する工程と、
第1の基板を前記犠牲層を境界として除去する工程と、
第2の基板に接着されて半導体膜の表面にさらに電極を形成する工程とを少なくとも含むことを特徴とする請求項1記載の光半導体装置の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005025210A JP3913253B2 (ja) | 2004-07-30 | 2005-02-01 | 光半導体装置およびその製造方法 |
CN2010101352550A CN101794835B (zh) | 2004-07-30 | 2005-07-28 | 光学半导体器件 |
EP05768593.5A EP1774627B1 (en) | 2004-07-30 | 2005-07-28 | Optical semiconductor device |
PCT/JP2005/014259 WO2006011668A1 (en) | 2004-07-30 | 2005-07-28 | Optical semiconductor device |
US10/569,601 US7723708B2 (en) | 2004-07-30 | 2005-07-28 | Optical semiconductor device in which an electromagnetic wave is generated in a region of an applied electric field |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004223656 | 2004-07-30 | ||
JP2005025210A JP3913253B2 (ja) | 2004-07-30 | 2005-02-01 | 光半導体装置およびその製造方法 |
Publications (3)
Publication Number | Publication Date |
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JP2006066864A JP2006066864A (ja) | 2006-03-09 |
JP2006066864A5 JP2006066864A5 (ja) | 2006-08-17 |
JP3913253B2 true JP3913253B2 (ja) | 2007-05-09 |
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Application Number | Title | Priority Date | Filing Date |
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JP2005025210A Expired - Fee Related JP3913253B2 (ja) | 2004-07-30 | 2005-02-01 | 光半導体装置およびその製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7723708B2 (ja) |
EP (1) | EP1774627B1 (ja) |
JP (1) | JP3913253B2 (ja) |
CN (1) | CN101794835B (ja) |
WO (1) | WO2006011668A1 (ja) |
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JP4878180B2 (ja) * | 2005-03-24 | 2012-02-15 | キヤノン株式会社 | 電磁波を用いる検査装置 |
JP4732201B2 (ja) * | 2006-03-17 | 2011-07-27 | キヤノン株式会社 | 電磁波を用いたセンシング装置 |
JP5196779B2 (ja) * | 2006-03-17 | 2013-05-15 | キヤノン株式会社 | 光伝導素子及びセンサ装置 |
JP5006642B2 (ja) * | 2006-05-31 | 2012-08-22 | キヤノン株式会社 | テラヘルツ波発振器 |
DE102006041728B4 (de) * | 2006-09-01 | 2010-04-08 | Forschungsverbund Berlin E.V. | Vorrichtung und Verfahren zur Erzeugung von kohärenter Terahertz-Strahlung |
FR2908931B1 (fr) * | 2006-11-21 | 2009-02-13 | Centre Nat Rech Scient | Antenne et emetteur/recepteur terahertz integres,et procede pour leur fabrication. |
JP4977048B2 (ja) * | 2007-02-01 | 2012-07-18 | キヤノン株式会社 | アンテナ素子 |
JP4871176B2 (ja) * | 2007-03-13 | 2012-02-08 | 浜松ホトニクス株式会社 | 全反射テラヘルツ波測定装置 |
DE102007063625B4 (de) | 2007-03-15 | 2009-10-29 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Photoleiter und Verfahren zum Herstellen desselben |
JP4975000B2 (ja) | 2007-12-07 | 2012-07-11 | キヤノン株式会社 | 電磁波発生素子、電磁波集積素子、及び電磁波検出装置 |
JP5127430B2 (ja) * | 2007-12-25 | 2013-01-23 | キヤノン株式会社 | レーザ素子 |
JP5328265B2 (ja) * | 2008-08-25 | 2013-10-30 | キヤノン株式会社 | テラヘルツ波発生素子、及びテラヘルツ波発生装置 |
JP5419411B2 (ja) * | 2008-10-08 | 2014-02-19 | キヤノン株式会社 | テラヘルツ波発生素子 |
FR2950700B1 (fr) * | 2009-09-29 | 2012-04-20 | Univ Paris Sud | Dispositif optoelectronique terahertz et procede pour generer ou detecter des ondes electromagnetiques terahertz |
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JP5799538B2 (ja) * | 2011-03-18 | 2015-10-28 | セイコーエプソン株式会社 | テラヘルツ波発生装置、カメラ、イメージング装置、計測装置および光源装置 |
JP6062640B2 (ja) | 2011-03-18 | 2017-01-18 | キヤノン株式会社 | 光伝導素子 |
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-
2005
- 2005-02-01 JP JP2005025210A patent/JP3913253B2/ja not_active Expired - Fee Related
- 2005-07-28 US US10/569,601 patent/US7723708B2/en not_active Expired - Fee Related
- 2005-07-28 CN CN2010101352550A patent/CN101794835B/zh not_active Expired - Fee Related
- 2005-07-28 EP EP05768593.5A patent/EP1774627B1/en not_active Not-in-force
- 2005-07-28 WO PCT/JP2005/014259 patent/WO2006011668A1/en active Application Filing
Also Published As
Publication number | Publication date |
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EP1774627A4 (en) | 2010-11-03 |
EP1774627A1 (en) | 2007-04-18 |
EP1774627B1 (en) | 2015-06-17 |
US7723708B2 (en) | 2010-05-25 |
JP2006066864A (ja) | 2006-03-09 |
CN101794835B (zh) | 2012-05-30 |
CN101794835A (zh) | 2010-08-04 |
US20080217538A1 (en) | 2008-09-11 |
WO2006011668A1 (en) | 2006-02-02 |
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