DE3854989D1 - Optische Halbleiteranordnung - Google Patents

Optische Halbleiteranordnung

Info

Publication number
DE3854989D1
DE3854989D1 DE3854989T DE3854989T DE3854989D1 DE 3854989 D1 DE3854989 D1 DE 3854989D1 DE 3854989 T DE3854989 T DE 3854989T DE 3854989 T DE3854989 T DE 3854989T DE 3854989 D1 DE3854989 D1 DE 3854989D1
Authority
DE
Germany
Prior art keywords
semiconductor device
optical semiconductor
optical
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3854989T
Other languages
English (en)
Other versions
DE3854989T2 (de
Inventor
Masahito Migita
Tsuyoshi Uda
Osam Kanehisa
Masatoshi Shiiki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE3854989D1 publication Critical patent/DE3854989D1/de
Application granted granted Critical
Publication of DE3854989T2 publication Critical patent/DE3854989T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236—Superlattices; Multiple quantum well structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/005—Arrangements for writing information into, or reading information out from, a digital store with combined beam-and individual cell access

Landscapes

  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optical Recording Or Reproduction (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)
DE3854989T 1987-11-18 1988-11-17 Optische Halbleiteranordnung Expired - Fee Related DE3854989T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28932287 1987-11-18

Publications (2)

Publication Number Publication Date
DE3854989D1 true DE3854989D1 (de) 1996-03-21
DE3854989T2 DE3854989T2 (de) 1996-06-20

Family

ID=17741692

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3854989T Expired - Fee Related DE3854989T2 (de) 1987-11-18 1988-11-17 Optische Halbleiteranordnung

Country Status (3)

Country Link
US (1) US5010517A (de)
EP (1) EP0316909B1 (de)
DE (1) DE3854989T2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2640044B1 (fr) * 1988-12-06 1993-02-12 Thomson Csf Dispositif de detection de rayonnements optiques
JP3020529B2 (ja) * 1989-12-29 2000-03-15 富士通株式会社 光駆動量子化装置
US5013918A (en) * 1990-04-02 1991-05-07 The United States Of America As Represented By The Secretary Of The Army Multicolor infrared photodetector
US5327373A (en) * 1992-08-21 1994-07-05 Board Of Regents, The University Of Texas System Optoelectronic memories with photoconductive thin films
JP4537528B2 (ja) 2000-03-29 2010-09-01 株式会社東芝 光記録媒体
DE102005026554B4 (de) * 2005-06-06 2009-06-10 Dirk Dammers Verfahren zum Einbringen einer Verriegelungsnut in eine Nutflanke
EP1888859A1 (de) * 2005-06-06 2008-02-20 Dirk Dammers PANEEL, INSBESONDERE FUßBODENPANEEL
US7732351B2 (en) * 2006-09-21 2010-06-08 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device and laser processing apparatus

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3855583A (en) * 1973-06-04 1974-12-17 Rockwell International Corp Conductor-insulator-junction (cij) optical memory device and a memory system dependent thereon
US4075610A (en) * 1976-10-26 1978-02-21 Rca Corporation Method of storing optical information
US4101976A (en) * 1977-02-14 1978-07-18 International Business Machines Corporation Frequency selective optical data storage system
US4103312A (en) * 1977-06-09 1978-07-25 International Business Machines Corporation Semiconductor memory devices
US4597638A (en) * 1983-02-28 1986-07-01 At&T Bell Laboratories Nonlinear optical apparatus
US4525687A (en) * 1983-02-28 1985-06-25 At&T Bell Laboratories High speed light modulator using multiple quantum well structures
US4546244A (en) * 1984-03-14 1985-10-08 At&T Bell Laboratories Nonlinear and bistable optical device
JPS6377168A (ja) * 1986-09-19 1988-04-07 Nec Corp 複合光双安定素子

Also Published As

Publication number Publication date
EP0316909A2 (de) 1989-05-24
EP0316909B1 (de) 1996-02-07
EP0316909A3 (en) 1990-08-08
US5010517A (en) 1991-04-23
DE3854989T2 (de) 1996-06-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee