JPS5615086A - Photoelectric converting device - Google Patents

Photoelectric converting device

Info

Publication number
JPS5615086A
JPS5615086A JP16789979A JP16789979A JPS5615086A JP S5615086 A JPS5615086 A JP S5615086A JP 16789979 A JP16789979 A JP 16789979A JP 16789979 A JP16789979 A JP 16789979A JP S5615086 A JPS5615086 A JP S5615086A
Authority
JP
Japan
Prior art keywords
layer
electrode
consisted
type electrode
mis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16789979A
Other languages
Japanese (ja)
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP16789979A priority Critical patent/JPS5615086A/en
Publication of JPS5615086A publication Critical patent/JPS5615086A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/07—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the Schottky type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To provide a reverse-current preventing diode and a photo electromotive force generating semiconductor device in the same shape by forming both of them on the same substrate and also by performing their formation in complete simultaneousness using a batch processing. CONSTITUTION:A semiconductor layer 1 is provided by having an ohmic contact for an electrode 3 located on the reverse side. On the side of light-irradiated surface an insulated or semiinsulated layer 6, having an average film thickness of 5-100Angstrom , is provided. Then on the above layer 6, a Schottky type electrode consisted of a semitransparent metal or an MIS type electrode 2 is formed and further a transparent electrode 5 is superpositioned in a multiple structure on the upper surface of said Schottky type electrode or the MIS electrode. The layer 1 is consisted of silicon having a structue of single crystal or nonsingal crystal. The layer 6 is consisted of an insulating film such as silicon oxide, alumina or the like, and its thickness is to be within the limits of an allowable tunnel current.
JP16789979A 1979-12-24 1979-12-24 Photoelectric converting device Pending JPS5615086A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16789979A JPS5615086A (en) 1979-12-24 1979-12-24 Photoelectric converting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16789979A JPS5615086A (en) 1979-12-24 1979-12-24 Photoelectric converting device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP9009879A Division JPS5613778A (en) 1979-07-16 1979-07-16 Photoelectric converter and its preparation

Publications (1)

Publication Number Publication Date
JPS5615086A true JPS5615086A (en) 1981-02-13

Family

ID=15858111

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16789979A Pending JPS5615086A (en) 1979-12-24 1979-12-24 Photoelectric converting device

Country Status (1)

Country Link
JP (1) JPS5615086A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61189918A (en) * 1985-02-20 1986-08-23 Ube Nitto Kasei Kk Method and apparatus for coating wire with thermoplastic resin
JPS6247170A (en) * 1985-08-23 1987-02-28 ハイマン　オプトエレクトロニクス　ゲゼルシヤフト　ミツト　ベシユレンクテル　ハフツング Highly reverse resistance type diode device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61189918A (en) * 1985-02-20 1986-08-23 Ube Nitto Kasei Kk Method and apparatus for coating wire with thermoplastic resin
JPS6247170A (en) * 1985-08-23 1987-02-28 ハイマン　オプトエレクトロニクス　ゲゼルシヤフト　ミツト　ベシユレンクテル　ハフツング Highly reverse resistance type diode device

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