KR910008841A - 과전압 보호 기능부 반도체 장치 및 이의 제조방법 - Google Patents
과전압 보호 기능부 반도체 장치 및 이의 제조방법 Download PDFInfo
- Publication number
- KR910008841A KR910008841A KR1019900016348A KR900016348A KR910008841A KR 910008841 A KR910008841 A KR 910008841A KR 1019900016348 A KR1019900016348 A KR 1019900016348A KR 900016348 A KR900016348 A KR 900016348A KR 910008841 A KR910008841 A KR 910008841A
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor
- conductive
- protection function
- overvoltage protection
- semiconductor device
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims description 15
- 238000004519 manufacturing process Methods 0.000 title claims 2
- 239000000758 substrate Substances 0.000 claims 4
- 239000013078 crystal Substances 0.000 claims 2
- 230000007547 defect Effects 0.000 claims 2
- 239000004020 conductor Substances 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
- H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7424—Thyristor-type devices, e.g. having four-zone regenerative action having a built-in localised breakdown/breakover region, e.g. self-protected against destructive spontaneous, e.g. voltage breakover, firing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
- H01L29/7804—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a pn-junction diode
- H01L29/7805—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a pn-junction diode in antiparallel, e.g. freewheel diode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
- H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Thyristors (AREA)
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도 내지 제 3 도는 본 발명의 제 1 실시예 내지 제 3 실시예의 반도체 장치의 단면도.
Claims (2)
- 반도체기판(22)에 형성된 복수의 PN 접합을 갖고 있는 반도체 소자의 주 전류 통전로가 아닌 상기 기판 영역으로 구성된 과전압 보호 기능부 반도체 장치에 있어서, (a) 상기 기판의 주요 표면에 노출되는 도전형 반도체층(23,43,53,63,73,83), (b) 상기 도전형 반도체층의 상기 노출면에 인접하는 도전체 전극막(48c,57a,58b,67,77) 또는 상기 도전형 반도체층의 노출면인 트리거 광조사면(38). (c) 상기 도전형 반도체층의 상기 노출면과 반대측의 하부면에 인접하는 반대 도전형 반도체층(22,42,52,62,72,82a) 및 (d) 상기 도전형 반도체층과 상기 반대 도전형 반도체층과의 PN접합에 소정의 역전압을 인가시킬 때의 상기 도전체 전극막 또는 트리거 광조사면 하부쪽의 공핍층 형성 영역을 포함하는 선택적으로 형성되는 고밀도의 결정 결함층(100,100a,101 내지 105)를 포함하는 것을 특징으로 하는 과전압 보호 기능부 반도체 장치.
- 과전압 보호 기능부 반도체 장치를 제조하는 방법에 있어서, 반도체 기판면에 선택적으로 방사선을 조사하여 고밀도의 결정 결함층을 형성하는 공정을 포함하는 것을 특징으로 하는 방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1-268783 | 1989-10-16 | ||
JP1268783A JPH0680820B2 (ja) | 1989-10-16 | 1989-10-16 | 過電圧保護機能付半導体装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR910008841A true KR910008841A (ko) | 1991-05-31 |
KR940010555B1 KR940010555B1 (ko) | 1994-10-24 |
Family
ID=17463221
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019900016348A KR940010555B1 (ko) | 1989-10-16 | 1990-10-15 | 과전압 보호 기능부 반도체 장치 |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0423721B1 (ko) |
JP (1) | JPH0680820B2 (ko) |
KR (1) | KR940010555B1 (ko) |
DE (1) | DE69026184T2 (ko) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3210013B2 (ja) * | 1991-03-27 | 2001-09-17 | シーメンス アクチエンゲゼルシヤフト | 調整可能なブレークオーバ電圧を有するサイリスタおよびその製造方法 |
JPH05160391A (ja) * | 1991-12-02 | 1993-06-25 | Sankooshiya:Kk | サージ防護デバイスの保持電流制御方法 |
EP0670603B1 (en) * | 1994-02-18 | 1999-01-13 | Hitachi, Ltd. | Semiconductor device comprising at least one IGBT and a diode |
JP3238415B2 (ja) | 1996-09-30 | 2001-12-17 | オイペツク オイロペーイツシエ ゲゼルシヤフト フユール ライスツングスハルプライター エムベーハー ウント コンパニイ コマンデイートゲゼルシヤフト | ブレークダウン領域をもつサイリスタ |
JP3622405B2 (ja) * | 1997-02-28 | 2005-02-23 | 株式会社日立製作所 | 半導体スイッチング素子及びigbtモジュール |
DE19826022C1 (de) * | 1998-06-10 | 1999-06-17 | Siemens Ag | Vorrichtung und Verfahren zur Ansteuerung von Thyristoren |
JP3494023B2 (ja) * | 1998-07-28 | 2004-02-03 | 株式会社日立製作所 | 半導体装置および半導体装置の駆動方法並びに電力変換装置 |
EP1125322B1 (de) * | 1998-10-27 | 2013-12-11 | Infineon Technologies Bipolar GmbH & Co. KG | Verfahren zur selbstjustierenden abstimmung von thyristoren mit folgezündung |
US6531717B1 (en) * | 1999-03-01 | 2003-03-11 | Teccor Electronics, L.P. | Very low voltage actuated thyristor with centrally-located offset buried region |
US6723586B1 (en) * | 1999-06-08 | 2004-04-20 | Siemens Aktiengesellschaft | Thyristor provided with integrated circuit-commutated recovery time protection and production method therefor |
JP2005354031A (ja) * | 2004-05-13 | 2005-12-22 | Mitsubishi Electric Corp | 半導体装置 |
JP5036327B2 (ja) * | 2007-01-23 | 2012-09-26 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
JP5036569B2 (ja) * | 2008-01-09 | 2012-09-26 | 三菱電機株式会社 | 炭化珪素半導体装置およびその製造方法 |
RU2474926C1 (ru) * | 2011-09-21 | 2013-02-10 | Российская Федерация, От Имени Которой Выступает Министерство Промышленности И Торговли Российской Федерации | Способ регулирования напряжения переключения силового полупроводникового прибора |
JP2013074181A (ja) * | 2011-09-28 | 2013-04-22 | Toyota Motor Corp | 半導体装置とその製造方法 |
DE102013217925A1 (de) * | 2013-09-09 | 2015-03-12 | Siemens Aktiengesellschaft | Gleichspannungslasttrennschalter für Fahrleitungen eines Bahnstromversorungsnetzes und Verfahren zum Betreiben eines Gleichspannungslasttrennschalters |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4314266A (en) * | 1978-07-20 | 1982-02-02 | Electric Power Research Institute, Inc. | Thyristor with voltage breakover current control separated from main emitter by current limit region |
IE54111B1 (en) * | 1982-03-11 | 1989-06-21 | Westinghouse Electric Corp | Laser treatment of thyristor to provide overvoltage self-protection |
EP0130457A1 (de) * | 1983-07-01 | 1985-01-09 | Hahn-Meitner-Institut Berlin Gesellschaft mit beschränkter Haftung | Halbleiter-Bauelement mit mindestens einem pn-Übergang und mit in der Tiefe der Basisschicht scharf lokalisierten Ionen, Verfahren zu dessen Herstellung und seine Verwendung |
JPS62298120A (ja) * | 1986-06-18 | 1987-12-25 | Hitachi Ltd | 半導体装置およびその製造方法 |
JP2604580B2 (ja) * | 1986-10-01 | 1997-04-30 | 三菱電機株式会社 | アノード短絡形ゲートターンオフサイリスタ |
JPS649658A (en) * | 1987-07-01 | 1989-01-12 | Mitsubishi Electric Corp | Gto thyristor |
US5049965A (en) * | 1987-11-20 | 1991-09-17 | Siemens Aktiengesellschaft | Thyristor having adjustable breakover voltage and method of manufacture |
EP0343369A1 (de) * | 1988-05-19 | 1989-11-29 | Siemens Aktiengesellschaft | Verfahren zum Herstellen eines Thyristors |
-
1989
- 1989-10-16 JP JP1268783A patent/JPH0680820B2/ja not_active Expired - Fee Related
-
1990
- 1990-10-15 KR KR1019900016348A patent/KR940010555B1/ko not_active IP Right Cessation
- 1990-10-16 EP EP90119834A patent/EP0423721B1/en not_active Expired - Lifetime
- 1990-10-16 DE DE69026184T patent/DE69026184T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH03129879A (ja) | 1991-06-03 |
JPH0680820B2 (ja) | 1994-10-12 |
DE69026184T2 (de) | 1996-09-05 |
EP0423721A3 (en) | 1992-04-22 |
KR940010555B1 (ko) | 1994-10-24 |
DE69026184D1 (de) | 1996-05-02 |
EP0423721A2 (en) | 1991-04-24 |
EP0423721B1 (en) | 1996-03-27 |
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