DE69026184D1 - Halbleiteranordnung mit Überspannungsschutzvorrichtung und Verfahren zu ihrer Herstellung - Google Patents

Halbleiteranordnung mit Überspannungsschutzvorrichtung und Verfahren zu ihrer Herstellung

Info

Publication number
DE69026184D1
DE69026184D1 DE69026184T DE69026184T DE69026184D1 DE 69026184 D1 DE69026184 D1 DE 69026184D1 DE 69026184 T DE69026184 T DE 69026184T DE 69026184 T DE69026184 T DE 69026184T DE 69026184 D1 DE69026184 D1 DE 69026184D1
Authority
DE
Germany
Prior art keywords
production
protection device
overvoltage protection
semiconductor arrangement
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69026184T
Other languages
English (en)
Other versions
DE69026184T2 (de
Inventor
Mitsuhiko Kitagawa
Tetsujiro Tsunoda
Akihiko Osawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69026184D1 publication Critical patent/DE69026184D1/de
Publication of DE69026184T2 publication Critical patent/DE69026184T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
    • H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7424—Thyristor-type devices, e.g. having four-zone regenerative action having a built-in localised breakdown/breakover region, e.g. self-protected against destructive spontaneous, e.g. voltage breakover, firing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
    • H01L29/7804—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a pn-junction diode
    • H01L29/7805—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a pn-junction diode in antiparallel, e.g. freewheel diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
    • H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE69026184T 1989-10-16 1990-10-16 Halbleiteranordnung mit Überspannungsschutzvorrichtung und Verfahren zu ihrer Herstellung Expired - Fee Related DE69026184T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1268783A JPH0680820B2 (ja) 1989-10-16 1989-10-16 過電圧保護機能付半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
DE69026184D1 true DE69026184D1 (de) 1996-05-02
DE69026184T2 DE69026184T2 (de) 1996-09-05

Family

ID=17463221

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69026184T Expired - Fee Related DE69026184T2 (de) 1989-10-16 1990-10-16 Halbleiteranordnung mit Überspannungsschutzvorrichtung und Verfahren zu ihrer Herstellung

Country Status (4)

Country Link
EP (1) EP0423721B1 (de)
JP (1) JPH0680820B2 (de)
KR (1) KR940010555B1 (de)
DE (1) DE69026184T2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1992017907A1 (de) * 1991-03-27 1992-10-15 Siemens Aktiengesellschaft Thyristor mit einstellbarer kippspannung und verfahren zu seiner herstellung
JPH05160391A (ja) * 1991-12-02 1993-06-25 Sankooshiya:Kk サージ防護デバイスの保持電流制御方法
EP0670603B1 (de) * 1994-02-18 1999-01-13 Hitachi, Ltd. Halbleiterbauelement mit mindestens einem IGBT und einer Diode
EP0931351B1 (de) 1996-09-30 2004-01-28 EUPEC Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG Thyristor mit durchbruchbereich
JP3622405B2 (ja) * 1997-02-28 2005-02-23 株式会社日立製作所 半導体スイッチング素子及びｉｇｂｔモジュール
DE19826022C1 (de) * 1998-06-10 1999-06-17 Siemens Ag Vorrichtung und Verfahren zur Ansteuerung von Thyristoren
JP3494023B2 (ja) * 1998-07-28 2004-02-03 株式会社日立製作所 半導体装置および半導体装置の駆動方法並びに電力変換装置
WO2000025357A1 (de) * 1998-10-27 2000-05-04 Infineon Technologies Ag Verfahren zur selbstjustierenden abstimmung von thyristoren mit folgezündung
US6531717B1 (en) * 1999-03-01 2003-03-11 Teccor Electronics, L.P. Very low voltage actuated thyristor with centrally-located offset buried region
US6723586B1 (en) * 1999-06-08 2004-04-20 Siemens Aktiengesellschaft Thyristor provided with integrated circuit-commutated recovery time protection and production method therefor
JP2005354031A (ja) * 2004-05-13 2005-12-22 Mitsubishi Electric Corp 半導体装置
JP5036327B2 (ja) * 2007-01-23 2012-09-26 三菱電機株式会社 半導体装置及びその製造方法
JP5036569B2 (ja) * 2008-01-09 2012-09-26 三菱電機株式会社 炭化珪素半導体装置およびその製造方法
RU2474926C1 (ru) * 2011-09-21 2013-02-10 Российская Федерация, От Имени Которой Выступает Министерство Промышленности И Торговли Российской Федерации Способ регулирования напряжения переключения силового полупроводникового прибора
JP2013074181A (ja) * 2011-09-28 2013-04-22 Toyota Motor Corp 半導体装置とその製造方法
DE102013217925A1 (de) * 2013-09-09 2015-03-12 Siemens Aktiengesellschaft Gleichspannungslasttrennschalter für Fahrleitungen eines Bahnstromversorungsnetzes und Verfahren zum Betreiben eines Gleichspannungslasttrennschalters

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4314266A (en) * 1978-07-20 1982-02-02 Electric Power Research Institute, Inc. Thyristor with voltage breakover current control separated from main emitter by current limit region
IE54111B1 (en) * 1982-03-11 1989-06-21 Westinghouse Electric Corp Laser treatment of thyristor to provide overvoltage self-protection
EP0130457A1 (de) * 1983-07-01 1985-01-09 Hahn-Meitner-Institut Berlin Gesellschaft mit beschränkter Haftung Halbleiter-Bauelement mit mindestens einem pn-Übergang und mit in der Tiefe der Basisschicht scharf lokalisierten Ionen, Verfahren zu dessen Herstellung und seine Verwendung
JPS62298120A (ja) * 1986-06-18 1987-12-25 Hitachi Ltd 半導体装置およびその製造方法
JP2604580B2 (ja) * 1986-10-01 1997-04-30 三菱電機株式会社 アノード短絡形ゲートターンオフサイリスタ
JPS649658A (en) * 1987-07-01 1989-01-12 Mitsubishi Electric Corp Gto thyristor
US5049965A (en) * 1987-11-20 1991-09-17 Siemens Aktiengesellschaft Thyristor having adjustable breakover voltage and method of manufacture
EP0343369A1 (de) * 1988-05-19 1989-11-29 Siemens Aktiengesellschaft Verfahren zum Herstellen eines Thyristors

Also Published As

Publication number Publication date
JPH0680820B2 (ja) 1994-10-12
EP0423721B1 (de) 1996-03-27
EP0423721A3 (en) 1992-04-22
KR910008841A (ko) 1991-05-31
JPH03129879A (ja) 1991-06-03
DE69026184T2 (de) 1996-09-05
EP0423721A2 (de) 1991-04-24
KR940010555B1 (ko) 1994-10-24

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8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee