DE69327434D1 - Dünnschicht-Halbleiteranordnung und Verfahren zu ihrer Herstellung - Google Patents
Dünnschicht-Halbleiteranordnung und Verfahren zu ihrer HerstellungInfo
- Publication number
- DE69327434D1 DE69327434D1 DE69327434T DE69327434T DE69327434D1 DE 69327434 D1 DE69327434 D1 DE 69327434D1 DE 69327434 T DE69327434 T DE 69327434T DE 69327434 T DE69327434 T DE 69327434T DE 69327434 D1 DE69327434 D1 DE 69327434D1
- Authority
- DE
- Germany
- Prior art keywords
- thin
- production
- semiconductor device
- film semiconductor
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22764592A JPH0677447A (ja) | 1992-08-26 | 1992-08-26 | 半導体薄膜素子の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69327434D1 true DE69327434D1 (de) | 2000-02-03 |
DE69327434T2 DE69327434T2 (de) | 2000-05-11 |
Family
ID=16864125
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69327434T Expired - Fee Related DE69327434T2 (de) | 1992-08-26 | 1993-08-26 | Dünnschicht-Halbleiteranordnung und Verfahren zu ihrer Herstellung |
Country Status (5)
Country | Link |
---|---|
US (1) | US5459335A (de) |
EP (1) | EP0585125B1 (de) |
JP (1) | JPH0677447A (de) |
KR (1) | KR940004849A (de) |
DE (1) | DE69327434T2 (de) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5603779A (en) * | 1995-05-17 | 1997-02-18 | Harris Corporation | Bonded wafer and method of fabrication thereof |
US5810926A (en) * | 1996-03-11 | 1998-09-22 | Micron Technology, Inc. | Method and apparatus for applying atomized adhesive to a leadframe for chip bonding |
US6132798A (en) * | 1998-08-13 | 2000-10-17 | Micron Technology, Inc. | Method for applying atomized adhesive to a leadframe for chip bonding |
US6030857A (en) | 1996-03-11 | 2000-02-29 | Micron Technology, Inc. | Method for application of spray adhesive to a leadframe for chip bonding |
KR100420213B1 (ko) * | 2001-05-07 | 2004-03-04 | 산양전기주식회사 | 연성인쇄회로기판용 점착성도료와 그 사용방법 |
TW564471B (en) * | 2001-07-16 | 2003-12-01 | Semiconductor Energy Lab | Semiconductor device and peeling off method and method of manufacturing semiconductor device |
US6934001B2 (en) * | 2001-08-13 | 2005-08-23 | Sharp Laboratories Of America, Inc. | Structure and method for supporting a flexible substrate |
US20030161044A1 (en) * | 2002-02-04 | 2003-08-28 | Nikon Corporation | Diffractive optical element and method for manufacturing same |
JP3983681B2 (ja) * | 2003-01-14 | 2007-09-26 | 株式会社マキタ | 充電装置 |
TWI223428B (en) * | 2003-11-13 | 2004-11-01 | United Microelectronics Corp | Frame attaching process |
DE102004029765A1 (de) * | 2004-06-21 | 2006-03-16 | Infineon Technologies Ag | Substratbasiertes Die-Package mit BGA- oder BGA-ähnlichen Komponenten |
JP5565198B2 (ja) * | 2010-08-19 | 2014-08-06 | 株式会社島津製作所 | 回路構成体の接着剤注入装置および回路構成体の接着剤注入方法 |
JP5561018B2 (ja) * | 2010-08-19 | 2014-07-30 | 株式会社島津製作所 | 接着剤注入装置および接着剤注入方法 |
KR20150120376A (ko) | 2013-02-20 | 2015-10-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 박리 방법, 반도체 장치, 및 박리 장치 |
WO2015087192A1 (en) | 2013-12-12 | 2015-06-18 | Semiconductor Energy Laboratory Co., Ltd. | Peeling method and peeling apparatus |
KR102520709B1 (ko) * | 2016-04-19 | 2023-04-12 | 삼성디스플레이 주식회사 | 인쇄회로기판용 보호테이프 및 이를 구비하는 디스플레이 장치 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4070230A (en) * | 1974-07-04 | 1978-01-24 | Siemens Aktiengesellschaft | Semiconductor component with dielectric carrier and its manufacture |
US4266334A (en) * | 1979-07-25 | 1981-05-12 | Rca Corporation | Manufacture of thinned substrate imagers |
JPS6123379A (ja) * | 1984-07-11 | 1986-01-31 | Hitachi Ltd | 光電子装置 |
US4599970A (en) * | 1985-03-11 | 1986-07-15 | Rca Corporation | Apparatus for coating a selected area of the surface of an object |
JPS63308386A (ja) * | 1987-01-30 | 1988-12-15 | Sony Corp | 半導体装置とその製造方法 |
US4888364A (en) * | 1989-01-26 | 1989-12-19 | Dow Corning Corporation | Solid gel dispensers for achieving controlled release of volatile liquid materials and method for preparing same |
US5034801A (en) * | 1989-07-31 | 1991-07-23 | W. L. Gore & Associates, Inc. | Intergrated circuit element having a planar, solvent-free dielectric layer |
US5121190A (en) * | 1990-03-14 | 1992-06-09 | International Business Machines Corp. | Solder interconnection structure on organic substrates |
JP2927982B2 (ja) * | 1991-03-18 | 1999-07-28 | ジャパンゴアテックス株式会社 | 半導体装置 |
-
1992
- 1992-08-26 JP JP22764592A patent/JPH0677447A/ja active Pending
-
1993
- 1993-08-13 US US08/106,408 patent/US5459335A/en not_active Expired - Fee Related
- 1993-08-25 KR KR1019930016598A patent/KR940004849A/ko not_active Application Discontinuation
- 1993-08-26 EP EP93306772A patent/EP0585125B1/de not_active Expired - Lifetime
- 1993-08-26 DE DE69327434T patent/DE69327434T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0585125A2 (de) | 1994-03-02 |
DE69327434T2 (de) | 2000-05-11 |
KR940004849A (ko) | 1994-03-16 |
JPH0677447A (ja) | 1994-03-18 |
EP0585125A3 (en) | 1997-09-10 |
US5459335A (en) | 1995-10-17 |
EP0585125B1 (de) | 1999-12-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |