DE3855765D1 - Dünnschicht-Siliciumhalbleiteranordnung und Verfahren zu ihrer Herstellung - Google Patents
Dünnschicht-Siliciumhalbleiteranordnung und Verfahren zu ihrer HerstellungInfo
- Publication number
- DE3855765D1 DE3855765D1 DE3855765T DE3855765T DE3855765D1 DE 3855765 D1 DE3855765 D1 DE 3855765D1 DE 3855765 T DE3855765 T DE 3855765T DE 3855765 T DE3855765 T DE 3855765T DE 3855765 D1 DE3855765 D1 DE 3855765D1
- Authority
- DE
- Germany
- Prior art keywords
- thin
- production
- semiconductor device
- silicon semiconductor
- film silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/0245—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02609—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
- H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Recrystallisation Techniques (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18536187 | 1987-07-27 | ||
JP63167841A JPH07114184B2 (ja) | 1987-07-27 | 1988-07-07 | 薄膜形シリコン半導体装置およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3855765D1 true DE3855765D1 (de) | 1997-03-06 |
DE3855765T2 DE3855765T2 (de) | 1997-08-14 |
Family
ID=26491765
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3855765T Expired - Lifetime DE3855765T2 (de) | 1987-07-27 | 1988-07-25 | Dünnschicht-Siliciumhalbleiteranordnung und Verfahren zu ihrer Herstellung |
Country Status (4)
Country | Link |
---|---|
US (1) | US5132754A (de) |
EP (1) | EP0301463B1 (de) |
JP (1) | JPH07114184B2 (de) |
DE (1) | DE3855765T2 (de) |
Families Citing this family (56)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5753542A (en) * | 1985-08-02 | 1998-05-19 | Semiconductor Energy Laboratory Co., Ltd. | Method for crystallizing semiconductor material without exposing it to air |
US5962869A (en) * | 1988-09-28 | 1999-10-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor material and method for forming the same and thin film transistor |
JPH01302769A (ja) * | 1988-05-30 | 1989-12-06 | Seikosha Co Ltd | 逆スタガー型シリコン薄膜トランジスタの製造方法 |
JP2700277B2 (ja) | 1990-06-01 | 1998-01-19 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタの作製方法 |
US6008078A (en) * | 1990-07-24 | 1999-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device |
US5210050A (en) | 1990-10-15 | 1993-05-11 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device comprising a semiconductor film |
TW237562B (de) | 1990-11-09 | 1995-01-01 | Semiconductor Energy Res Co Ltd | |
US5849601A (en) | 1990-12-25 | 1998-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method for manufacturing the same |
US7115902B1 (en) | 1990-11-20 | 2006-10-03 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method for manufacturing the same |
KR950013784B1 (ko) | 1990-11-20 | 1995-11-16 | 가부시키가이샤 한도오따이 에네루기 겐큐쇼 | 반도체 전계효과 트랜지스터 및 그 제조방법과 박막트랜지스터 |
KR950001360B1 (ko) * | 1990-11-26 | 1995-02-17 | 가부시키가이샤 한도오따이 에네루기 겐큐쇼 | 전기 광학장치와 그 구동방법 |
US7154147B1 (en) * | 1990-11-26 | 2006-12-26 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and driving method for the same |
US8106867B2 (en) | 1990-11-26 | 2012-01-31 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and driving method for the same |
US7098479B1 (en) | 1990-12-25 | 2006-08-29 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method for manufacturing the same |
US7576360B2 (en) * | 1990-12-25 | 2009-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device which comprises thin film transistors and method for manufacturing the same |
JP3103385B2 (ja) * | 1991-01-25 | 2000-10-30 | 株式会社東芝 | ポリシリコン薄膜半導体装置 |
US5289030A (en) | 1991-03-06 | 1994-02-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with oxide layer |
EP0499979A3 (en) | 1991-02-16 | 1993-06-09 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device |
US5930608A (en) | 1992-02-21 | 1999-07-27 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating a thin film transistor in which the channel region of the transistor consists of two portions of differing crystallinity |
US6713783B1 (en) | 1991-03-15 | 2004-03-30 | Semiconductor Energy Laboratory Co., Ltd. | Compensating electro-optical device including thin film transistors |
JP2873632B2 (ja) | 1991-03-15 | 1999-03-24 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2794499B2 (ja) | 1991-03-26 | 1998-09-03 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP3277548B2 (ja) * | 1991-05-08 | 2002-04-22 | セイコーエプソン株式会社 | ディスプレイ基板 |
JP2845303B2 (ja) | 1991-08-23 | 1999-01-13 | 株式会社 半導体エネルギー研究所 | 半導体装置とその作製方法 |
US5766344A (en) * | 1991-09-21 | 1998-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming a semiconductor |
US6979840B1 (en) * | 1991-09-25 | 2005-12-27 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistors having anodized metal film between the gate wiring and drain wiring |
US6964890B1 (en) | 1992-03-17 | 2005-11-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
US6624450B1 (en) | 1992-03-27 | 2003-09-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
JP2814161B2 (ja) | 1992-04-28 | 1998-10-22 | 株式会社半導体エネルギー研究所 | アクティブマトリクス表示装置およびその駆動方法 |
US6693681B1 (en) | 1992-04-28 | 2004-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method of driving the same |
JP3065825B2 (ja) * | 1992-10-21 | 2000-07-17 | 株式会社半導体エネルギー研究所 | レーザー処理方法 |
JP2860869B2 (ja) * | 1993-12-02 | 1999-02-24 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
US7081938B1 (en) | 1993-12-03 | 2006-07-25 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method for manufacturing the same |
JPH07176745A (ja) * | 1993-12-17 | 1995-07-14 | Semiconductor Energy Lab Co Ltd | 半導体素子 |
JP3402400B2 (ja) | 1994-04-22 | 2003-05-06 | 株式会社半導体エネルギー研究所 | 半導体集積回路の作製方法 |
JP2900229B2 (ja) * | 1994-12-27 | 1999-06-02 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法および電気光学装置 |
US5834327A (en) | 1995-03-18 | 1998-11-10 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing display device |
JP3645378B2 (ja) * | 1996-01-19 | 2005-05-11 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US6478263B1 (en) | 1997-01-17 | 2002-11-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and its manufacturing method |
JP3645380B2 (ja) | 1996-01-19 | 2005-05-11 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法、情報端末、ヘッドマウントディスプレイ、ナビゲーションシステム、携帯電話、ビデオカメラ、投射型表示装置 |
JP3645379B2 (ja) | 1996-01-19 | 2005-05-11 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP3729955B2 (ja) | 1996-01-19 | 2005-12-21 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US6180439B1 (en) * | 1996-01-26 | 2001-01-30 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating a semiconductor device |
US7056381B1 (en) | 1996-01-26 | 2006-06-06 | Semiconductor Energy Laboratory Co., Ltd. | Fabrication method of semiconductor device |
US6100562A (en) | 1996-03-17 | 2000-08-08 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
US7071041B2 (en) | 2000-01-20 | 2006-07-04 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
JP4045731B2 (ja) * | 2000-09-25 | 2008-02-13 | 株式会社日立製作所 | 薄膜半導体素子の製造方法 |
US7151017B2 (en) * | 2001-01-26 | 2006-12-19 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
JP4718700B2 (ja) * | 2001-03-16 | 2011-07-06 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
TW541584B (en) | 2001-06-01 | 2003-07-11 | Semiconductor Energy Lab | Semiconductor film, semiconductor device and method for manufacturing same |
JP4141741B2 (ja) * | 2001-06-01 | 2008-08-27 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US6994083B2 (en) * | 2001-12-21 | 2006-02-07 | Trudell Medical International | Nebulizer apparatus and method |
JP4326756B2 (ja) * | 2002-07-04 | 2009-09-09 | 株式会社半導体エネルギー研究所 | ドーピング方法、ドーピング装置の制御システム、およびドーピング装置 |
US7442631B2 (en) * | 2005-02-10 | 2008-10-28 | Semiconductor Energy Laboratory Co., Ltd. | Doping method and method of manufacturing field effect transistor |
US7791172B2 (en) * | 2007-03-19 | 2010-09-07 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile semiconductor memory device |
KR101042636B1 (ko) * | 2008-10-15 | 2011-06-20 | 김용환 | 에너지빔 조사를 이용한 실리콘 박막 제조방법 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5662356A (en) * | 1979-10-26 | 1981-05-28 | Seiko Instr & Electronics Ltd | Logic integrated circuit device and its manufacturing method |
US4363828A (en) * | 1979-12-12 | 1982-12-14 | International Business Machines Corp. | Method for depositing silicon films and related materials by a glow discharge in a disiland or higher order silane gas |
EP0055032B1 (de) * | 1980-12-23 | 1986-04-23 | National Research Development Corporation | Feldeffekttransistor |
JPS5893221A (ja) * | 1981-11-30 | 1983-06-02 | Toshiba Corp | 半導体薄膜構造とその製造方法 |
JPS58188165A (ja) * | 1982-04-28 | 1983-11-02 | Nec Corp | 半導体装置 |
US4632712A (en) * | 1983-09-12 | 1986-12-30 | Massachusetts Institute Of Technology | Reducing dislocations in semiconductors utilizing repeated thermal cycling during multistage epitaxial growth |
JPS60239066A (ja) * | 1984-05-11 | 1985-11-27 | Hitachi Ltd | 半導体装置 |
US4597160A (en) * | 1985-08-09 | 1986-07-01 | Rca Corporation | Method of fabricating a polysilicon transistor with a high carrier mobility |
EP0222215B1 (de) * | 1985-10-23 | 1991-10-16 | Hitachi, Ltd. | Polysilizium-MOS-Transistor und Verfahren zu seiner Herstellung |
JPS62104173A (ja) * | 1985-10-31 | 1987-05-14 | Fujitsu Ltd | 半導体装置 |
JPH0793258B2 (ja) * | 1985-12-04 | 1995-10-09 | 富士通株式会社 | 導電体膜の再結晶化方法 |
-
1988
- 1988-07-07 JP JP63167841A patent/JPH07114184B2/ja not_active Expired - Fee Related
- 1988-07-21 US US07/222,966 patent/US5132754A/en not_active Expired - Lifetime
- 1988-07-25 DE DE3855765T patent/DE3855765T2/de not_active Expired - Lifetime
- 1988-07-25 EP EP88111984A patent/EP0301463B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5132754A (en) | 1992-07-21 |
JPH01103825A (ja) | 1989-04-20 |
EP0301463A3 (de) | 1989-09-20 |
DE3855765T2 (de) | 1997-08-14 |
JPH07114184B2 (ja) | 1995-12-06 |
EP0301463B1 (de) | 1997-01-22 |
EP0301463A2 (de) | 1989-02-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |