DE69329635D1 - Halbleiteranordnung und Verfahren zu ihrer Herstellung - Google Patents

Halbleiteranordnung und Verfahren zu ihrer Herstellung

Info

Publication number
DE69329635D1
DE69329635D1 DE69329635T DE69329635T DE69329635D1 DE 69329635 D1 DE69329635 D1 DE 69329635D1 DE 69329635 T DE69329635 T DE 69329635T DE 69329635 T DE69329635 T DE 69329635T DE 69329635 D1 DE69329635 D1 DE 69329635D1
Authority
DE
Germany
Prior art keywords
manufacture
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69329635T
Other languages
English (en)
Other versions
DE69329635T3 (de
DE69329635T2 (de
Inventor
Hideya Kumomi
Takao Yonehara
Nobuhiko Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=17159558&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69329635(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE69329635D1 publication Critical patent/DE69329635D1/de
Application granted granted Critical
Publication of DE69329635T2 publication Critical patent/DE69329635T2/de
Publication of DE69329635T3 publication Critical patent/DE69329635T3/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/34—Materials of the light emitting region containing only elements of group IV of the periodic system
    • H01L33/346—Materials of the light emitting region containing only elements of group IV of the periodic system containing porous silicon
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/96—Porous semiconductor
DE69329635T 1992-08-25 1993-08-24 Halbleiteranordnung und Verfahren zu ihrer Herstellung Expired - Fee Related DE69329635T3 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP24717592 1992-08-25
JP24717592A JP3352118B2 (ja) 1992-08-25 1992-08-25 半導体装置及びその製造方法

Publications (3)

Publication Number Publication Date
DE69329635D1 true DE69329635D1 (de) 2000-12-14
DE69329635T2 DE69329635T2 (de) 2001-05-10
DE69329635T3 DE69329635T3 (de) 2004-06-24

Family

ID=17159558

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69329635T Expired - Fee Related DE69329635T3 (de) 1992-08-25 1993-08-24 Halbleiteranordnung und Verfahren zu ihrer Herstellung

Country Status (4)

Country Link
US (1) US5970361A (de)
EP (1) EP0584777B2 (de)
JP (1) JP3352118B2 (de)
DE (1) DE69329635T3 (de)

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US6037612A (en) * 1997-09-11 2000-03-14 Kokusai Denshin Denwa Kabushiki Kaisha Semiconductor light emitting device having nanostructure porous silicon and mesostructure porous silicon
US6180497B1 (en) * 1998-07-23 2001-01-30 Canon Kabushiki Kaisha Method for producing semiconductor base members
US6197654B1 (en) * 1998-08-21 2001-03-06 Texas Instruments Incorporated Lightly positively doped silicon wafer anodization process
US6375738B1 (en) 1999-03-26 2002-04-23 Canon Kabushiki Kaisha Process of producing semiconductor article
FR2797093B1 (fr) * 1999-07-26 2001-11-02 France Telecom Procede de realisation d'un dispositif comprenant un empilement de plans de boites quantiques sur un substrat de silicium ou germanium monocristallin
DE10006528C2 (de) * 2000-02-15 2001-12-06 Infineon Technologies Ag Fuseanordnung für eine Halbleitervorrichtung
JP2001284622A (ja) 2000-03-31 2001-10-12 Canon Inc 半導体部材の製造方法及び太陽電池の製造方法
US6790785B1 (en) 2000-09-15 2004-09-14 The Board Of Trustees Of The University Of Illinois Metal-assisted chemical etch porous silicon formation method
WO2002103752A2 (en) 2000-11-27 2002-12-27 The Board Of Trustees Of The University Of Illinois Metal-assisted chemical etch to produce porous group iii-v materials
DE10064494A1 (de) * 2000-12-22 2002-07-04 Bosch Gmbh Robert Verfahren zur Herstellung eines Halbleiterbauelements sowie ein nach dem Verfahren hergestelltes Halbleiterbauelement, wobei das Halbleiterbauelement insbesondere eine bewegliche Masse aufweist
FR2823596B1 (fr) * 2001-04-13 2004-08-20 Commissariat Energie Atomique Substrat ou structure demontable et procede de realisation
JP4310076B2 (ja) * 2001-05-31 2009-08-05 キヤノン株式会社 結晶性薄膜の製造方法
EP1341222A1 (de) * 2002-02-28 2003-09-03 Interuniversitair Micro-Elektronica Centrum Verfahren zur Herstellung einer Vorrichtung mit einer Halbleiterschicht auf einem Substrat mit nicht-angepasstem Gitter
EP1620583A4 (de) * 2003-05-06 2009-04-22 Canon Kk Halbleitersubstrat, halbleitervorrichtung, leuchtdiode und herstellungsverfahren dafür
JP2004335642A (ja) * 2003-05-06 2004-11-25 Canon Inc 基板およびその製造方法
US20050124137A1 (en) * 2003-05-07 2005-06-09 Canon Kabushiki Kaisha Semiconductor substrate and manufacturing method therefor
TWI242232B (en) * 2003-06-09 2005-10-21 Canon Kk Semiconductor substrate, semiconductor device, and method of manufacturing the same
JP2005005509A (ja) * 2003-06-12 2005-01-06 Canon Inc 薄膜トランジスタ及びその製造方法
JP2005136383A (ja) * 2003-10-09 2005-05-26 Canon Inc 有機半導体素子、その製造方法および有機半導体装置
JP4771510B2 (ja) 2004-06-23 2011-09-14 キヤノン株式会社 半導体層の製造方法及び基板の製造方法
JP4950047B2 (ja) * 2004-07-22 2012-06-13 ボード オブ トラスティーズ オブ ザ レランド スタンフォード ジュニア ユニバーシティ ゲルマニウムの成長方法及び半導体基板の製造方法
JP4612671B2 (ja) 2005-02-09 2011-01-12 富士通株式会社 発光デバイス及び半導体装置
JP5037808B2 (ja) * 2005-10-20 2012-10-03 キヤノン株式会社 アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置
JP5171016B2 (ja) 2006-10-27 2013-03-27 キヤノン株式会社 半導体部材、半導体物品の製造方法、その製造方法を用いたｌｅｄアレイ
JP4770706B2 (ja) * 2006-11-13 2011-09-14 ソニー株式会社 薄膜半導体の製造方法
JP2009094144A (ja) * 2007-10-04 2009-04-30 Canon Inc 発光素子の製造方法
US8129718B2 (en) 2008-08-28 2012-03-06 Canon Kabushiki Kaisha Amorphous oxide semiconductor and thin film transistor using the same
JP5537326B2 (ja) * 2010-08-06 2014-07-02 学校法人 名城大学 発光ダイオード素子及びその製造方法並びに単結晶ＳｉＣ材料及びその製造方法
EP2630669A4 (de) 2010-10-22 2014-04-23 California Inst Of Techn Phononische nanomesh-strukturen für wärmenergieumwandlungsmaterialien mit niedriger wärmeleitfähigkeit
JP5440549B2 (ja) * 2011-05-02 2014-03-12 ソニー株式会社 薄膜半導体の製造方法
JP5440550B2 (ja) * 2011-05-02 2014-03-12 ソニー株式会社 薄膜半導体の製造方法
JP5360127B2 (ja) * 2011-05-02 2013-12-04 ソニー株式会社 薄膜半導体の製造方法
US20130019918A1 (en) 2011-07-18 2013-01-24 The Regents Of The University Of Michigan Thermoelectric devices, systems and methods
US10205080B2 (en) 2012-01-17 2019-02-12 Matrix Industries, Inc. Systems and methods for forming thermoelectric devices
WO2013149205A1 (en) 2012-03-29 2013-10-03 California Institute Of Technology Phononic structures and related devices and methods
KR20150086466A (ko) 2012-08-17 2015-07-28 실리시움 에너지, 인크. 열전 디바이스 형성 시스템 및 형성 방법
WO2014070795A1 (en) 2012-10-31 2014-05-08 Silicium Energy, Inc. Methods for forming thermoelectric elements
KR20170026323A (ko) 2014-03-25 2017-03-08 실리시움 에너지, 인크. 열전 디바이스들 및 시스템들
ITUB20152264A1 (it) * 2015-07-17 2017-01-17 St Microelectronics Srl Dispositivo ad emissione di luce in silicio poroso e relativo metodo di fabbricazione
WO2017192738A1 (en) 2016-05-03 2017-11-09 Matrix Industries, Inc. Thermoelectric devices and systems
USD819627S1 (en) 2016-11-11 2018-06-05 Matrix Industries, Inc. Thermoelectric smartwatch

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JPS6027179B2 (ja) * 1975-11-05 1985-06-27 日本電気株式会社 多孔質シリコンの形成方法
US4096619A (en) * 1977-01-31 1978-06-27 International Telephone & Telegraph Corporation Semiconductor scribing method
GB2038548B (en) * 1978-10-27 1983-03-23 Nippon Telegraph & Telephone Isolating semiconductor device by porous silicon oxide
JPS57103243A (en) * 1980-12-17 1982-06-26 Toshiba Corp Photoelectrical conversion target and its manufacture
US5156706A (en) * 1982-09-07 1992-10-20 Sephton Hugo H Evaporation of liquids with dispersant added
US5225374A (en) * 1988-05-13 1993-07-06 The United States Of America As Represented By The Secretary Of The Navy Method of fabricating a receptor-based sensor
US5023200A (en) * 1988-11-22 1991-06-11 The United States Of America As Represented By The United States Department Of Energy Formation of multiple levels of porous silicon for buried insulators and conductors in silicon device technologies
US5147555A (en) * 1990-05-04 1992-09-15 Betz Laboratories, Inc. Methods of controlling scale formation in aqueous systems
CN1018844B (zh) * 1990-06-02 1992-10-28 中国科学院兰州化学物理研究所 防锈干膜润滑剂
US5139624A (en) * 1990-12-06 1992-08-18 Sri International Method for making porous semiconductor membranes
JP3112106B2 (ja) * 1991-10-11 2000-11-27 キヤノン株式会社 半導体基材の作製方法
US5272355A (en) * 1992-05-20 1993-12-21 Spire Corporation Optoelectronic switching and display device with porous silicon

Also Published As

Publication number Publication date
JP3352118B2 (ja) 2002-12-03
EP0584777B1 (de) 2000-11-08
JPH0677102A (ja) 1994-03-18
EP0584777B2 (de) 2004-01-02
US5970361A (en) 1999-10-19
DE69329635T3 (de) 2004-06-24
DE69329635T2 (de) 2001-05-10
EP0584777A1 (de) 1994-03-02

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Legal Events

Date Code Title Description
8363 Opposition against the patent
8366 Restricted maintained after opposition proceedings
8339 Ceased/non-payment of the annual fee