ITUB20152264A1 - Dispositivo ad emissione di luce in silicio poroso e relativo metodo di fabbricazione - Google Patents

Dispositivo ad emissione di luce in silicio poroso e relativo metodo di fabbricazione

Info

Publication number
ITUB20152264A1
ITUB20152264A1 ITUB2015A002264A ITUB20152264A ITUB20152264A1 IT UB20152264 A1 ITUB20152264 A1 IT UB20152264A1 IT UB2015A002264 A ITUB2015A002264 A IT UB2015A002264A IT UB20152264 A ITUB20152264 A IT UB20152264A IT UB20152264 A1 ITUB20152264 A1 IT UB20152264A1
Authority
IT
Italy
Prior art keywords
emission
light
porous silicon
related manufacturing
manufacturing
Prior art date
Application number
ITUB2015A002264A
Other languages
English (en)
Inventor
Marco Morelli
Fabrizio Fausto Renzo Toia
Giuseppe Barillaro
Marco Sambi
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to ITUB2015A002264A priority Critical patent/ITUB20152264A1/it
Priority to CN201610108591.3A priority patent/CN106356434B/zh
Priority to CN201620147583.5U priority patent/CN205752219U/zh
Priority to US15/087,183 priority patent/US10002990B2/en
Priority to EP16175646.5A priority patent/EP3118905B1/en
Publication of ITUB20152264A1 publication Critical patent/ITUB20152264A1/it
Priority to US15/983,959 priority patent/US10825954B2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/34—Materials of the light emitting region containing only elements of Group IV of the Periodic Table
    • H01L33/346—Materials of the light emitting region containing only elements of Group IV of the Periodic Table containing porous silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0054—Processes for devices with an active region comprising only group IV elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
ITUB2015A002264A 2015-07-17 2015-07-17 Dispositivo ad emissione di luce in silicio poroso e relativo metodo di fabbricazione ITUB20152264A1 (it)

Priority Applications (6)

Application Number Priority Date Filing Date Title
ITUB2015A002264A ITUB20152264A1 (it) 2015-07-17 2015-07-17 Dispositivo ad emissione di luce in silicio poroso e relativo metodo di fabbricazione
CN201610108591.3A CN106356434B (zh) 2015-07-17 2016-02-26 多孔硅发光器件及其制造方法
CN201620147583.5U CN205752219U (zh) 2015-07-17 2016-02-26 多孔硅发光器件
US15/087,183 US10002990B2 (en) 2015-07-17 2016-03-31 Porous-silicon light-emitting device and manufacturing method thereof
EP16175646.5A EP3118905B1 (en) 2015-07-17 2016-06-22 Porous-silicon light-emitting device and manufacturing method thereof
US15/983,959 US10825954B2 (en) 2015-07-17 2018-05-18 Porous-silicon light-emitting device and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ITUB2015A002264A ITUB20152264A1 (it) 2015-07-17 2015-07-17 Dispositivo ad emissione di luce in silicio poroso e relativo metodo di fabbricazione

Publications (1)

Publication Number Publication Date
ITUB20152264A1 true ITUB20152264A1 (it) 2017-01-17

Family

ID=54200023

Family Applications (1)

Application Number Title Priority Date Filing Date
ITUB2015A002264A ITUB20152264A1 (it) 2015-07-17 2015-07-17 Dispositivo ad emissione di luce in silicio poroso e relativo metodo di fabbricazione

Country Status (4)

Country Link
US (2) US10002990B2 (it)
EP (1) EP3118905B1 (it)
CN (2) CN205752219U (it)
IT (1) ITUB20152264A1 (it)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ITUB20152264A1 (it) * 2015-07-17 2017-01-17 St Microelectronics Srl Dispositivo ad emissione di luce in silicio poroso e relativo metodo di fabbricazione

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0537013A (ja) * 1991-07-30 1993-02-12 Nippondenso Co Ltd 注入形発光素子及びその製造方法
JPH0555627A (ja) * 1991-08-27 1993-03-05 Nippondenso Co Ltd 注入形発光素子

Family Cites Families (23)

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GB8711373D0 (en) * 1987-05-14 1987-06-17 Secr Defence Electroluminescent silicon device
DE4126955C2 (de) * 1991-08-14 1994-05-05 Fraunhofer Ges Forschung Verfahren zum Herstellen von elektrolumineszenten Siliziumstrukturen
US5285078A (en) * 1992-01-24 1994-02-08 Nippon Steel Corporation Light emitting element with employment of porous silicon and optical device utilizing light emitting element
EP0563625A3 (en) * 1992-04-03 1994-05-25 Ibm Immersion scanning system for fabricating porous silicon films and devices
US5331180A (en) * 1992-04-30 1994-07-19 Fujitsu Limited Porous semiconductor light emitting device
US5272355A (en) * 1992-05-20 1993-12-21 Spire Corporation Optoelectronic switching and display device with porous silicon
JP3352118B2 (ja) * 1992-08-25 2002-12-03 キヤノン株式会社 半導体装置及びその製造方法
US5324965A (en) * 1993-03-26 1994-06-28 The United States Of America As Represented By The Secretary Of The Army Light emitting diode with electro-chemically etched porous silicon
JPH06338631A (ja) * 1993-03-29 1994-12-06 Canon Inc 発光素子及びその製造方法
DE4342527A1 (de) * 1993-12-15 1995-06-22 Forschungszentrum Juelich Gmbh Verfahren zum elektrischen Kontaktieren von porösem Silizium
JP2985691B2 (ja) * 1994-03-23 1999-12-06 株式会社デンソー 半導体装置
JPH08148280A (ja) * 1994-04-14 1996-06-07 Toshiba Corp 半導体装置およびその製造方法
US5466948A (en) * 1994-10-11 1995-11-14 John M. Baker Monolithic silicon opto-coupler using enhanced silicon based LEDS
US6017773A (en) * 1997-04-04 2000-01-25 University Of Rochester Stabilizing process for porous silicon and resulting light emitting device
US6225647B1 (en) * 1998-07-27 2001-05-01 Kulite Semiconductor Products, Inc. Passivation of porous semiconductors for improved optoelectronic device performance and light-emitting diode based on same
JP3688970B2 (ja) * 2000-02-29 2005-08-31 株式会社日立製作所 薄膜型電子源を用いた表示装置及びその製造方法
WO2004006969A1 (ja) * 2002-07-11 2004-01-22 Sumitomo Electric Industries, Ltd. 多孔質半導体及びその製造方法
KR100499499B1 (ko) * 2002-12-26 2005-07-05 엘지전자 주식회사 상업용 전자 레인지
EP1761105A4 (en) * 2004-04-28 2009-10-21 Panasonic Elec Works Co Ltd PRESSURE GENERATOR AND MANUFACTURING METHOD THEREFOR
FR2991504A1 (fr) * 2012-05-30 2013-12-06 St Microelectronics Tours Sas Composant de puissance vertical haute tension
FR3012256A1 (fr) * 2013-10-17 2015-04-24 St Microelectronics Tours Sas Composant de puissance vertical haute tension
US9564550B2 (en) * 2013-10-28 2017-02-07 Infineon Technologies Dresden Gmbh Optoelectronic component, a method for manufacturing an optoelectronic component, and a method for processing a carrier
ITUB20152264A1 (it) * 2015-07-17 2017-01-17 St Microelectronics Srl Dispositivo ad emissione di luce in silicio poroso e relativo metodo di fabbricazione

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0537013A (ja) * 1991-07-30 1993-02-12 Nippondenso Co Ltd 注入形発光素子及びその製造方法
JPH0555627A (ja) * 1991-08-27 1993-03-05 Nippondenso Co Ltd 注入形発光素子

Also Published As

Publication number Publication date
EP3118905A1 (en) 2017-01-18
US20170018683A1 (en) 2017-01-19
CN106356434B (zh) 2018-12-25
US10002990B2 (en) 2018-06-19
EP3118905B1 (en) 2019-10-30
CN106356434A (zh) 2017-01-25
US20180269357A1 (en) 2018-09-20
US10825954B2 (en) 2020-11-03
CN205752219U (zh) 2016-11-30

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