HK1216358A1 - 半導體裝置以及半導體裝置的製造方法 - Google Patents

半導體裝置以及半導體裝置的製造方法

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Publication number
HK1216358A1
HK1216358A1 HK16104291.0A HK16104291A HK1216358A1 HK 1216358 A1 HK1216358 A1 HK 1216358A1 HK 16104291 A HK16104291 A HK 16104291A HK 1216358 A1 HK1216358 A1 HK 1216358A1
Authority
HK
Hong Kong
Prior art keywords
semiconductor device
manufacturing same
manufacturing
same
semiconductor
Prior art date
Application number
HK16104291.0A
Other languages
English (en)
Inventor
Kashiwazaki Tomoya
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Publication of HK1216358A1 publication Critical patent/HK1216358A1/zh

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    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
    • H01L2224/83862—Heat curing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
    • H01L2924/07811—Extrinsic, i.e. with electrical conductive fillers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/1016—Shape being a cuboid
    • H01L2924/10162—Shape being a cuboid with a square active surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)
HK16104291.0A 2014-06-30 2016-04-14 半導體裝置以及半導體裝置的製造方法 HK1216358A1 (zh)

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Families Citing this family (11)

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JP6253531B2 (ja) * 2014-06-30 2017-12-27 ルネサスエレクトロニクス株式会社 半導体装置
CN110313064B (zh) * 2017-03-23 2024-06-25 株式会社东芝 陶瓷金属电路基板及使用了该陶瓷金属电路基板的半导体装置
CN108039342A (zh) * 2017-12-01 2018-05-15 泰州友润电子科技股份有限公司 一种改进的to-220d7l引线框架
JP7059091B2 (ja) * 2018-04-24 2022-04-25 モレックス エルエルシー 電子部品
CN108520872A (zh) * 2018-05-02 2018-09-11 泰州友润电子科技股份有限公司 一种具有绝缘保护性能的多装载型引线框架
JP7304145B2 (ja) * 2018-11-07 2023-07-06 新光電気工業株式会社 リードフレーム、半導体装置及びリードフレームの製造方法
US11502045B2 (en) * 2019-01-23 2022-11-15 Texas Instruments Incorporated Electronic device with step cut lead
JP7381168B2 (ja) * 2019-12-09 2023-11-15 日清紡マイクロデバイス株式会社 半導体装置の設計方法
JP2021158317A (ja) * 2020-03-30 2021-10-07 ローム株式会社 半導体装置
US11715678B2 (en) * 2020-12-31 2023-08-01 Texas Instruments Incorporated Roughened conductive components
WO2024070967A1 (ja) * 2022-09-29 2024-04-04 ローム株式会社 信号伝達装置

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6142856U (ja) * 1984-08-23 1986-03-19 日本電気株式会社 半導体装置
JPH05315512A (ja) * 1992-05-07 1993-11-26 Nec Corp 半導体装置用リードフレーム
JPH06140563A (ja) 1992-10-23 1994-05-20 Rohm Co Ltd 半導体装置
JPH08107172A (ja) 1994-10-04 1996-04-23 Hitachi Cable Ltd リードフレームの製造方法
JPH104170A (ja) 1996-06-14 1998-01-06 Nec Corp リードフレーム
JPH10303352A (ja) * 1997-04-22 1998-11-13 Toshiba Corp 半導体装置および半導体装置の製造方法
US6861735B2 (en) * 1997-06-27 2005-03-01 Matsushita Electric Industrial Co., Ltd. Resin molded type semiconductor device and a method of manufacturing the same
JP2915892B2 (ja) * 1997-06-27 1999-07-05 松下電子工業株式会社 樹脂封止型半導体装置およびその製造方法
MY133357A (en) 1999-06-30 2007-11-30 Hitachi Ltd A semiconductor device and a method of manufacturing the same
US6882048B2 (en) * 2001-03-30 2005-04-19 Dainippon Printing Co., Ltd. Lead frame and semiconductor package having a groove formed in the respective terminals for limiting a plating area
JP2003204027A (ja) * 2002-01-09 2003-07-18 Matsushita Electric Ind Co Ltd リードフレーム及びその製造方法、樹脂封止型半導体装置及びその製造方法
US6841854B2 (en) * 2002-04-01 2005-01-11 Matsushita Electric Industrial Co., Ltd. Semiconductor device
JP2003318348A (ja) * 2002-04-19 2003-11-07 Denso Corp 樹脂封止型電子装置
JP3639302B2 (ja) * 2004-08-20 2005-04-20 松下電器産業株式会社 樹脂封止型半導体装置
JP2006108306A (ja) * 2004-10-04 2006-04-20 Yamaha Corp リードフレームおよびそれを用いた半導体パッケージ
US7375424B2 (en) * 2005-05-03 2008-05-20 International Rectifier Corporation Wirebonded device packages for semiconductor devices having elongated electrodes
CN101308830A (zh) * 2007-05-18 2008-11-19 飞思卡尔半导体（中国）有限公司 用于半导体封装的引线框
JP2010283252A (ja) * 2009-06-08 2010-12-16 Denso Corp 半導体装置およびその製造方法
JP2013062338A (ja) * 2011-09-13 2013-04-04 Toshiba Corp 発光装置
US8558398B1 (en) * 2012-10-22 2013-10-15 Avago Technologies General Ip (Singapore) Pte. Ltd. Bond wire arrangement for minimizing crosstalk
JP2015153987A (ja) * 2014-02-18 2015-08-24 株式会社デンソー モールドパッケージ
CN203910779U (zh) * 2014-06-26 2014-10-29 三垦电气株式会社 半导体装置
JP6253531B2 (ja) * 2014-06-30 2017-12-27 ルネサスエレクトロニクス株式会社 半導体装置

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