DE69331534D1 - Halbleiter-Speicherbauteil und Verfahren zu seiner Herstellung - Google Patents
Halbleiter-Speicherbauteil und Verfahren zu seiner HerstellungInfo
- Publication number
- DE69331534D1 DE69331534D1 DE69331534T DE69331534T DE69331534D1 DE 69331534 D1 DE69331534 D1 DE 69331534D1 DE 69331534 T DE69331534 T DE 69331534T DE 69331534 T DE69331534 T DE 69331534T DE 69331534 D1 DE69331534 D1 DE 69331534D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacture
- memory device
- semiconductor memory
- semiconductor
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4074485A JP2904635B2 (ja) | 1992-03-30 | 1992-03-30 | 半導体装置およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69331534D1 true DE69331534D1 (de) | 2002-03-21 |
DE69331534T2 DE69331534T2 (de) | 2002-09-12 |
Family
ID=13548635
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69331534T Expired - Lifetime DE69331534T2 (de) | 1992-03-30 | 1993-03-30 | Halbleiter-Speicherbauteil und Verfahren zu seiner Herstellung |
Country Status (5)
Country | Link |
---|---|
US (2) | US5691550A (de) |
EP (1) | EP0563879B1 (de) |
JP (1) | JP2904635B2 (de) |
KR (1) | KR0178800B1 (de) |
DE (1) | DE69331534T2 (de) |
Families Citing this family (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55142008A (en) * | 1979-04-23 | 1980-11-06 | Mitsui Petrochem Ind Ltd | Preparation of polyolefin |
JPH08250674A (ja) * | 1995-03-15 | 1996-09-27 | Toshiba Microelectron Corp | 半導体記憶装置 |
JP3161354B2 (ja) * | 1997-02-07 | 2001-04-25 | 日本電気株式会社 | 半導体装置及びその製造方法 |
US5792690A (en) * | 1997-05-15 | 1998-08-11 | Vanguard International Semiconductor Corporation | Method of fabricating a DRAM cell with an area equal to four times the used minimum feature |
US5937288A (en) * | 1997-06-30 | 1999-08-10 | Siemens Aktiengesellschaft | CMOS integrated circuits with reduced substrate defects |
KR100260559B1 (ko) * | 1997-12-29 | 2000-07-01 | 윤종용 | 비휘발성 메모리 장치의 웰 구조 및 그 제조 방법 |
KR100328455B1 (ko) * | 1997-12-30 | 2002-08-08 | 주식회사 하이닉스반도체 | 반도체소자의제조방법 |
US6316336B1 (en) * | 1999-03-01 | 2001-11-13 | Richard A. Blanchard | Method for forming buried layers with top-side contacts and the resulting structure |
US7745289B2 (en) | 2000-08-16 | 2010-06-29 | Fairchild Semiconductor Corporation | Method of forming a FET having ultra-low on-resistance and low gate charge |
US6710403B2 (en) | 2002-07-30 | 2004-03-23 | Fairchild Semiconductor Corporation | Dual trench power MOSFET |
US6818513B2 (en) | 2001-01-30 | 2004-11-16 | Fairchild Semiconductor Corporation | Method of forming a field effect transistor having a lateral depletion structure |
US6916745B2 (en) | 2003-05-20 | 2005-07-12 | Fairchild Semiconductor Corporation | Structure and method for forming a trench MOSFET having self-aligned features |
US6803626B2 (en) | 2002-07-18 | 2004-10-12 | Fairchild Semiconductor Corporation | Vertical charge control semiconductor device |
KR100417211B1 (ko) * | 2001-12-20 | 2004-02-05 | 동부전자 주식회사 | 반도체 소자의 금속 배선 형성 방법 |
KR100475084B1 (ko) * | 2002-08-02 | 2005-03-10 | 삼성전자주식회사 | Dram 반도체 소자 및 그 제조방법 |
US7576388B1 (en) | 2002-10-03 | 2009-08-18 | Fairchild Semiconductor Corporation | Trench-gate LDMOS structures |
US6710418B1 (en) | 2002-10-11 | 2004-03-23 | Fairchild Semiconductor Corporation | Schottky rectifier with insulation-filled trenches and method of forming the same |
US7652326B2 (en) | 2003-05-20 | 2010-01-26 | Fairchild Semiconductor Corporation | Power semiconductor devices and methods of manufacture |
JP2005005580A (ja) * | 2003-06-13 | 2005-01-06 | Renesas Technology Corp | 半導体装置 |
KR100994719B1 (ko) | 2003-11-28 | 2010-11-16 | 페어차일드코리아반도체 주식회사 | 슈퍼정션 반도체장치 |
US7368777B2 (en) | 2003-12-30 | 2008-05-06 | Fairchild Semiconductor Corporation | Accumulation device with charge balance structure and method of forming the same |
US7352036B2 (en) | 2004-08-03 | 2008-04-01 | Fairchild Semiconductor Corporation | Semiconductor power device having a top-side drain using a sinker trench |
CN101882583A (zh) | 2005-04-06 | 2010-11-10 | 飞兆半导体公司 | 沟栅场效应晶体管及其形成方法 |
JP4955222B2 (ja) | 2005-05-20 | 2012-06-20 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
KR101296984B1 (ko) | 2005-06-10 | 2013-08-14 | 페어차일드 세미컨덕터 코포레이션 | 전하 균형 전계 효과 트랜지스터 |
US7319256B1 (en) | 2006-06-19 | 2008-01-15 | Fairchild Semiconductor Corporation | Shielded gate trench FET with the shield and gate electrodes being connected together |
US7554148B2 (en) * | 2006-06-27 | 2009-06-30 | United Microelectronics Corp. | Pick-up structure for DRAM capacitors |
JP4241856B2 (ja) * | 2006-06-29 | 2009-03-18 | 三洋電機株式会社 | 半導体装置および半導体装置の製造方法 |
CN101868856B (zh) | 2007-09-21 | 2014-03-12 | 飞兆半导体公司 | 用于功率器件的超结结构及制造方法 |
US7772668B2 (en) | 2007-12-26 | 2010-08-10 | Fairchild Semiconductor Corporation | Shielded gate trench FET with multiple channels |
US20120273916A1 (en) | 2011-04-27 | 2012-11-01 | Yedinak Joseph A | Superjunction Structures for Power Devices and Methods of Manufacture |
US8174067B2 (en) | 2008-12-08 | 2012-05-08 | Fairchild Semiconductor Corporation | Trench-based power semiconductor devices with increased breakdown voltage characteristics |
US8432000B2 (en) | 2010-06-18 | 2013-04-30 | Fairchild Semiconductor Corporation | Trench MOS barrier schottky rectifier with a planar surface using CMP techniques |
US8487371B2 (en) | 2011-03-29 | 2013-07-16 | Fairchild Semiconductor Corporation | Vertical MOSFET transistor having source/drain contacts disposed on the same side and method for manufacturing the same |
US8673700B2 (en) | 2011-04-27 | 2014-03-18 | Fairchild Semiconductor Corporation | Superjunction structures for power devices and methods of manufacture |
US8786010B2 (en) | 2011-04-27 | 2014-07-22 | Fairchild Semiconductor Corporation | Superjunction structures for power devices and methods of manufacture |
US8836028B2 (en) | 2011-04-27 | 2014-09-16 | Fairchild Semiconductor Corporation | Superjunction structures for power devices and methods of manufacture |
US8772868B2 (en) | 2011-04-27 | 2014-07-08 | Fairchild Semiconductor Corporation | Superjunction structures for power devices and methods of manufacture |
US9711392B2 (en) * | 2012-07-25 | 2017-07-18 | Infineon Technologies Ag | Field emission devices and methods of making thereof |
JP2014138091A (ja) * | 2013-01-17 | 2014-07-28 | Fuji Electric Co Ltd | 半導体装置およびその製造方法 |
US11444160B2 (en) | 2020-12-11 | 2022-09-13 | Globalfoundries U.S. Inc. | Integrated circuit (IC) structure with body contact to well with multiple diode junctions |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62208662A (ja) * | 1986-03-07 | 1987-09-12 | Sony Corp | 半導体記憶装置 |
JPS63136558A (ja) * | 1986-11-28 | 1988-06-08 | Hitachi Ltd | 半導体記憶装置とその製造方法 |
US4918502A (en) * | 1986-11-28 | 1990-04-17 | Hitachi, Ltd. | Semiconductor memory having trench capacitor formed with sheath electrode |
JP2674992B2 (ja) * | 1986-11-28 | 1997-11-12 | 株式会社日立製作所 | 半導体記憶装置におけるプレート配線形成法 |
GB2199695B (en) * | 1987-01-06 | 1990-07-25 | Samsung Semiconductor Inc | Dynamic random access memory with selective well biasing |
JPS6411360A (en) * | 1987-07-06 | 1989-01-13 | Hitachi Ltd | Semiconductor memory device |
US4845051A (en) * | 1987-10-29 | 1989-07-04 | Siliconix Incorporated | Buried gate JFET |
JPH0797627B2 (ja) * | 1987-12-21 | 1995-10-18 | 株式会社日立製作所 | 半導体装置 |
KR910000246B1 (ko) * | 1988-02-15 | 1991-01-23 | 삼성전자 주식회사 | 반도체 메모리장치 |
DE68926793T2 (de) * | 1988-03-15 | 1997-01-09 | Toshiba Kawasaki Kk | Dynamischer RAM |
US5242845A (en) * | 1990-06-13 | 1993-09-07 | Kabushiki Kaisha Toshiba | Method of production of vertical MOS transistor |
US5264716A (en) * | 1992-01-09 | 1993-11-23 | International Business Machines Corporation | Diffused buried plate trench dram cell array |
JPH07112049B2 (ja) * | 1992-01-09 | 1995-11-29 | インターナショナル・ビジネス・マシーンズ・コーポレイション | ダイナミック・ランダム・アクセス・メモリ・デバイスおよび製造方法 |
JPH0637275A (ja) * | 1992-07-13 | 1994-02-10 | Toshiba Corp | 半導体記憶装置及びその製造方法 |
-
1992
- 1992-03-30 JP JP4074485A patent/JP2904635B2/ja not_active Expired - Fee Related
-
1993
- 1993-03-27 KR KR1019930004868A patent/KR0178800B1/ko not_active IP Right Cessation
- 1993-03-30 DE DE69331534T patent/DE69331534T2/de not_active Expired - Lifetime
- 1993-03-30 EP EP93105240A patent/EP0563879B1/de not_active Expired - Lifetime
-
1995
- 1995-04-28 US US08/430,287 patent/US5691550A/en not_active Expired - Lifetime
-
1997
- 1997-07-11 US US08/890,376 patent/US5959324A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE69331534T2 (de) | 2002-09-12 |
EP0563879B1 (de) | 2002-02-06 |
JP2904635B2 (ja) | 1999-06-14 |
KR930020588A (ko) | 1993-10-20 |
KR0178800B1 (ko) | 1999-04-15 |
US5691550A (en) | 1997-11-25 |
US5959324A (en) | 1999-09-28 |
EP0563879A1 (de) | 1993-10-06 |
JPH0629485A (ja) | 1994-02-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |