DE69631938D1 - Halbleiter-Speicherbauteil und Verfahren zu seiner Herstellung - Google Patents

Halbleiter-Speicherbauteil und Verfahren zu seiner Herstellung

Info

Publication number
DE69631938D1
DE69631938D1 DE69631938T DE69631938T DE69631938D1 DE 69631938 D1 DE69631938 D1 DE 69631938D1 DE 69631938 T DE69631938 T DE 69631938T DE 69631938 T DE69631938 T DE 69631938T DE 69631938 D1 DE69631938 D1 DE 69631938D1
Authority
DE
Germany
Prior art keywords
manufacture
memory device
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69631938T
Other languages
English (en)
Other versions
DE69631938T2 (de
Inventor
Keun Hyung Park
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
LG Semicon Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Semicon Co Ltd filed Critical LG Semicon Co Ltd
Publication of DE69631938D1 publication Critical patent/DE69631938D1/de
Application granted granted Critical
Publication of DE69631938T2 publication Critical patent/DE69631938T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/78391—Field effect transistors with field effect produced by an insulated gate the gate comprising a layer which is used for its ferroelectric properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
DE69631938T 1995-11-23 1996-09-02 Halbleiter-Speicherbauteil und Verfahren zu seiner Herstellung Expired - Lifetime DE69631938T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1019950043304A KR100311486B1 (ko) 1995-11-23 1995-11-23 반도체메모리장치및그의제조방법
KR9543304 1995-11-23

Publications (2)

Publication Number Publication Date
DE69631938D1 true DE69631938D1 (de) 2004-04-29
DE69631938T2 DE69631938T2 (de) 2005-04-14

Family

ID=19435434

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69631938T Expired - Lifetime DE69631938T2 (de) 1995-11-23 1996-09-02 Halbleiter-Speicherbauteil und Verfahren zu seiner Herstellung

Country Status (6)

Country Link
US (2) US5770877A (de)
EP (1) EP0776045B1 (de)
JP (1) JP2838689B2 (de)
KR (1) KR100311486B1 (de)
CN (1) CN1151510C (de)
DE (1) DE69631938T2 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100311486B1 (ko) * 1995-11-23 2002-08-17 현대반도체 주식회사 반도체메모리장치및그의제조방법
KR100475719B1 (ko) * 1997-06-30 2005-07-07 주식회사 하이닉스반도체 반도체장치의게이트전극
JPH11186419A (ja) * 1997-12-25 1999-07-09 Toshiba Corp 不揮発性半導体記憶装置
US6069382A (en) * 1998-02-11 2000-05-30 Cypress Semiconductor Corp. Non-volatile memory cell having a high coupling ratio
US6054348A (en) * 1998-05-15 2000-04-25 Taiwan Semiconductor Manufacturing Company Self-aligned source process
US6040622A (en) 1998-06-11 2000-03-21 Sandisk Corporation Semiconductor package using terminals formed on a conductive layer of a circuit board
US6429495B2 (en) * 1998-06-17 2002-08-06 Mitsubishi Denki Kabushiki Kaisha Semiconductor device with address programming circuit
DE19840824C1 (de) * 1998-09-07 1999-10-21 Siemens Ag Ferroelektrischer Transistor, dessen Verwendung in einer Speicherzellenanordnung und Verfahren zu dessen Herstellung
JP2001118942A (ja) * 1999-10-21 2001-04-27 Matsushita Electronics Industry Corp トンネルチャネルトランジスタおよびその駆動方法
JP2001127265A (ja) * 1999-10-29 2001-05-11 Matsushita Electronics Industry Corp 半導体記憶装置およびその駆動方法
JP4488565B2 (ja) * 1999-12-03 2010-06-23 富士通株式会社 半導体記憶装置の製造方法
TW441038B (en) * 2000-01-10 2001-06-16 United Microelectronics Corp Manufacturing method of ETOX flash memory
US6240015B1 (en) * 2000-04-07 2001-05-29 Taiwan Semiconductor Manufacturing Corporation Method for reading 2-bit ETOX cells using gate induced drain leakage current
TW477065B (en) * 2001-01-30 2002-02-21 Ememory Technology Inc Manufacturing method of flash memory cell structure with dynamic-like write-in/erasing through channel and its operating method
DE10125594A1 (de) * 2001-05-25 2002-12-05 Infineon Technologies Ag Halbleiterspeichereinrichtung sowie Verfahren zu deren Herstellung
KR100464659B1 (ko) * 2002-04-23 2005-01-03 매그나칩 반도체 유한회사 플레시 메모리소자 및 그 제조방법
US6794236B1 (en) * 2002-06-03 2004-09-21 Lattice Semiconductor Corporation Eeprom device with improved capacitive coupling and fabrication process
JP4875284B2 (ja) * 2003-03-06 2012-02-15 スパンション エルエルシー 半導体記憶装置およびその製造方法
US8214169B2 (en) * 2003-08-18 2012-07-03 International Business Machines Corporation Circuits and methods for characterizing random variations in device characteristics in semiconductor integrated circuits
KR100599102B1 (ko) * 2004-08-03 2006-07-12 삼성전자주식회사 반도체 장치 및 이의 제조 방법
KR100635199B1 (ko) * 2005-05-12 2006-10-16 주식회사 하이닉스반도체 플래쉬 메모리 소자 및 그의 제조방법
KR101130432B1 (ko) * 2005-09-23 2012-03-27 엘지전자 주식회사 냉장고의 홈바도어장치
JP5793525B2 (ja) * 2013-03-08 2015-10-14 株式会社東芝 不揮発性半導体記憶装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4888630A (en) * 1988-03-21 1989-12-19 Texas Instruments Incorporated Floating-gate transistor with a non-linear intergate dielectric
JPH07120726B2 (ja) * 1990-05-30 1995-12-20 株式会社東芝 不揮発性半導体メモリ
JPH04257270A (ja) * 1991-02-08 1992-09-11 Fujitsu Ltd 半導体記憶装置
US5265059A (en) * 1991-05-10 1993-11-23 Intel Corporation Circuitry and method for discharging a drain of a cell of a non-volatile semiconductor memory
US5130769A (en) * 1991-05-16 1992-07-14 Motorola, Inc. Nonvolatile memory cell
JP2951082B2 (ja) * 1991-10-24 1999-09-20 株式会社東芝 半導体記憶装置およびその製造方法
JPH05121756A (ja) * 1991-10-24 1993-05-18 Mitsubishi Electric Corp 半導体装置及びその製造方法
JPH0629545A (ja) * 1992-03-23 1994-02-04 Matsushita Electron Corp 半導体記憶装置とその製造方法
JPH05315623A (ja) * 1992-05-08 1993-11-26 Nippon Steel Corp 不揮発性半導体記憶装置
US5329487A (en) * 1993-03-08 1994-07-12 Altera Corporation Two transistor flash EPROM cell
JPH06275840A (ja) * 1993-03-22 1994-09-30 Rohm Co Ltd 不揮発性記憶素子
KR0167874B1 (ko) * 1993-06-29 1999-01-15 사토 후미오 반도체 기억장치
KR100311486B1 (ko) * 1995-11-23 2002-08-17 현대반도체 주식회사 반도체메모리장치및그의제조방법
US5589413A (en) * 1995-11-27 1996-12-31 Taiwan Semiconductor Manufacturing Company Method of manufacturing self-aligned bit-line during EPROM fabrication

Also Published As

Publication number Publication date
JPH09153602A (ja) 1997-06-10
CN1151510C (zh) 2004-05-26
KR970030855A (ko) 1997-06-26
EP0776045B1 (de) 2004-03-24
US5900656A (en) 1999-05-04
CN1156313A (zh) 1997-08-06
EP0776045A3 (de) 1997-08-27
KR100311486B1 (ko) 2002-08-17
JP2838689B2 (ja) 1998-12-16
EP0776045A2 (de) 1997-05-28
US5770877A (en) 1998-06-23
DE69631938T2 (de) 2005-04-14

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Legal Events

Date Code Title Description
8332 No legal effect for de
8370 Indication related to discontinuation of the patent is to be deleted
8364 No opposition during term of opposition