DE69627975D1 - MOS-Transistor und Verfahren zu seiner Herstellung - Google Patents
MOS-Transistor und Verfahren zu seiner HerstellungInfo
- Publication number
- DE69627975D1 DE69627975D1 DE69627975T DE69627975T DE69627975D1 DE 69627975 D1 DE69627975 D1 DE 69627975D1 DE 69627975 T DE69627975 T DE 69627975T DE 69627975 T DE69627975 T DE 69627975T DE 69627975 D1 DE69627975 D1 DE 69627975D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacture
- mos transistor
- mos
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66651—Lateral single gate silicon transistors with a single crystalline channel formed on the silicon substrate after insulating device isolation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41775—Source or drain electrodes for field effect devices characterised by the proximity or the relative position of the source or drain electrode and the gate electrode, e.g. the source or drain electrode separated from the gate electrode by side-walls or spreading around or above the gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP35348295 | 1995-12-30 | ||
JP7353482A JP2751905B2 (ja) | 1995-12-30 | 1995-12-30 | 半導体装置およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69627975D1 true DE69627975D1 (de) | 2003-06-12 |
DE69627975T2 DE69627975T2 (de) | 2004-05-19 |
Family
ID=18431146
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69627975T Expired - Fee Related DE69627975T2 (de) | 1995-12-30 | 1996-12-27 | MOS-Transistor und Verfahren zu seiner Herstellung |
Country Status (4)
Country | Link |
---|---|
US (1) | US5872039A (de) |
EP (1) | EP0782182B1 (de) |
JP (1) | JP2751905B2 (de) |
DE (1) | DE69627975T2 (de) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW406374B (en) * | 1997-07-17 | 2000-09-21 | Ibm | Method for forming transistors with raised source and drains and device formed thereby |
US6187641B1 (en) * | 1997-12-05 | 2001-02-13 | Texas Instruments Incorporated | Lateral MOSFET having a barrier between the source/drain region and the channel region using a heterostructure raised source/drain region |
TW454254B (en) * | 1998-05-20 | 2001-09-11 | Winbond Electronics Corp | Method to manufacture devices with elevated source/drain |
TW372349B (en) * | 1998-06-08 | 1999-10-21 | United Microelectronics Corp | Bridge prevention method for self-aligned metal silicide |
US6180465B1 (en) * | 1998-11-20 | 2001-01-30 | Advanced Micro Devices | Method of making high performance MOSFET with channel scaling mask feature |
US6124627A (en) * | 1998-12-03 | 2000-09-26 | Texas Instruments Incorporated | Lateral MOSFET having a barrier between the source/drain region and the channel region using a heterostructure raised source/drain region |
KR100480904B1 (ko) | 1998-12-24 | 2005-08-30 | 주식회사 하이닉스반도체 | 반응로및이를이용한단결정실리콘층형성방법 |
KR100323720B1 (ko) * | 1999-12-31 | 2002-02-19 | 박종섭 | 엘리베이티드 반도체층 및 그의 형성방법 |
KR100393200B1 (ko) * | 2001-02-20 | 2003-07-31 | 페어차일드코리아반도체 주식회사 | 정전기적 방전으로부터의 보호를 위한 필드 트랜지스터 및그 제조방법 |
CN1395316A (zh) | 2001-07-04 | 2003-02-05 | 松下电器产业株式会社 | 半导体器件及其制造方法 |
US6919253B2 (en) | 2003-02-07 | 2005-07-19 | Matsushita Electric Industrial Co., Ltd. | Method of forming a semiconductor device including simultaneously forming a single crystalline epitaxial layer and a polycrystalline or amorphous layer |
US6808994B1 (en) * | 2003-06-17 | 2004-10-26 | Micron Technology, Inc. | Transistor structures and processes for forming same |
KR100485163B1 (ko) * | 2003-08-07 | 2005-04-22 | 동부아남반도체 주식회사 | 모스 트랜지스터 및 그 제조 방법 |
KR100485164B1 (ko) * | 2003-08-12 | 2005-04-22 | 동부아남반도체 주식회사 | 반도체 소자 및 그 제조 방법 |
US20050090082A1 (en) * | 2003-10-28 | 2005-04-28 | Texas Instruments Incorporated | Method and system for improving performance of MOSFETs |
KR100817217B1 (ko) * | 2006-12-06 | 2008-03-27 | 한국전자통신연구원 | 게르마늄 반도체 소자 및 그 제조방법 |
US7550796B2 (en) | 2006-12-06 | 2009-06-23 | Electronics And Telecommunications Research Institute | Germanium semiconductor device and method of manufacturing the same |
US9240454B1 (en) * | 2014-10-22 | 2016-01-19 | Stmicroelectronics, Inc. | Integrated circuit including a liner silicide with low contact resistance |
EP3200253B1 (de) * | 2016-01-29 | 2021-06-30 | Novaled GmbH | Verfahren zum herstellen eines vertikalen organischen feldeffekttransistors und vertikaler organischer feldeffekttransistor |
US20220384659A1 (en) * | 2021-05-26 | 2022-12-01 | Globalfoundries U.S. Inc. | Field effect transistor |
US11764225B2 (en) | 2021-06-10 | 2023-09-19 | Globalfoundries U.S. Inc. | Field effect transistor with shallow trench isolation features within source/drain regions |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3166455D1 (en) * | 1980-06-27 | 1984-11-08 | Nec Corp | Serial impact printer having two printing modes |
NL190388C (nl) * | 1986-02-07 | 1994-02-01 | Nippon Telegraph & Telephone | Werkwijze voor het vervaardigen van een halfgeleiderinrichting en halfgeleiderinrichting. |
KR900007686B1 (ko) * | 1986-10-08 | 1990-10-18 | 후지쓰 가부시끼가이샤 | 선택적으로 산화된 실리콘 기판상에 에피택셜 실리콘층과 다결정 실리콘층을 동시에 성장시키는 기상 증착방법 |
US5198378A (en) * | 1988-10-31 | 1993-03-30 | Texas Instruments Incorporated | Process of fabricating elevated source/drain transistor |
EP0430275A3 (en) * | 1989-12-01 | 1993-10-27 | Seiko Instr Inc | Doping method of barrier region in semiconductor device |
JPH03296247A (ja) * | 1990-04-13 | 1991-12-26 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
US5118639A (en) * | 1990-05-29 | 1992-06-02 | Motorola, Inc. | Process for the formation of elevated source and drain structures in a semiconductor device |
US5352631A (en) * | 1992-12-16 | 1994-10-04 | Motorola, Inc. | Method for forming a transistor having silicided regions |
-
1995
- 1995-12-30 JP JP7353482A patent/JP2751905B2/ja not_active Expired - Fee Related
-
1996
- 1996-12-24 US US08/772,915 patent/US5872039A/en not_active Expired - Fee Related
- 1996-12-27 DE DE69627975T patent/DE69627975T2/de not_active Expired - Fee Related
- 1996-12-27 EP EP96120942A patent/EP0782182B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5872039A (en) | 1999-02-16 |
DE69627975T2 (de) | 2004-05-19 |
EP0782182A2 (de) | 1997-07-02 |
JPH09186319A (ja) | 1997-07-15 |
EP0782182B1 (de) | 2003-05-07 |
EP0782182A3 (de) | 1997-08-06 |
JP2751905B2 (ja) | 1998-05-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |