DE69536084D1 - Halbleiterbauelement und Verfahren zu seiner Herstellung - Google Patents

Halbleiterbauelement und Verfahren zu seiner Herstellung

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Publication number
DE69536084D1
DE69536084D1 DE69536084T DE69536084T DE69536084D1 DE 69536084 D1 DE69536084 D1 DE 69536084D1 DE 69536084 T DE69536084 T DE 69536084T DE 69536084 T DE69536084 T DE 69536084T DE 69536084 D1 DE69536084 D1 DE 69536084D1
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Germany
Prior art keywords
production
semiconductor component
semiconductor
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69536084T
Other languages
English (en)
Inventor
Makoto Iijima
Tetsushi Wakabayashi
Toshio Hamano
Masaharu Minamizawa
Masashi Takenaka
Taturou Yamashita
Masataka Mizukoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Semiconductor Ltd
Original Assignee
Fujitsu Semiconductor Ltd
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Publication date
Application filed by Fujitsu Semiconductor Ltd filed Critical Fujitsu Semiconductor Ltd
Application granted granted Critical
Publication of DE69536084D1 publication Critical patent/DE69536084D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09209—Shape and layout details of conductors
    • H05K2201/095—Conductive through-holes or vias
    • H05K2201/0959—Plated through-holes or plated blind vias filled with insulating material
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    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09209—Shape and layout details of conductors
    • H05K2201/09654—Shape and layout details of conductors covering at least two types of conductors provided for in H05K2201/09218 - H05K2201/095
    • H05K2201/09672—Superposed layout, i.e. in different planes

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Geometry (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Wire Bonding (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Insulated Metal Substrates For Printed Circuits (AREA)
DE69536084T 1994-04-28 1995-04-13 Halbleiterbauelement und Verfahren zu seiner Herstellung Expired - Lifetime DE69536084D1 (de)

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JP7059562A JP3034180B2 (ja) 1994-04-28 1995-03-17 半導体装置及びその製造方法及び基板

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Families Citing this family (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3034180B2 (ja) 1994-04-28 2000-04-17 富士通株式会社 半導体装置及びその製造方法及び基板
KR100386061B1 (ko) 1995-10-24 2003-08-21 오끼 덴끼 고오교 가부시끼가이샤 크랙을방지하기위한개량된구조를가지는반도체장치및리이드프레임
US6734545B1 (en) * 1995-11-29 2004-05-11 Hitachi, Ltd. BGA type semiconductor device and electronic equipment using the same
DE19546045C1 (de) * 1995-12-09 1997-05-22 Bosch Gmbh Robert Flip-Chip-Verfahren zur Herstellung eines Multichip-Moduls
US6209665B1 (en) * 1996-07-01 2001-04-03 Ardis L. Holte Reverse circulation drilling system with bit locked underreamer arms
US5798557A (en) * 1996-08-29 1998-08-25 Harris Corporation Lid wafer bond packaging and micromachining
WO1998043288A1 (fr) * 1997-03-24 1998-10-01 Seiko Epson Corporation Dispositif a semi-conducteurs et son procede de fabrication
US6317333B1 (en) * 1997-08-28 2001-11-13 Mitsubishi Denki Kabushiki Kaisha Package construction of semiconductor device
US5965944A (en) * 1997-11-12 1999-10-12 International Business Machines Corporation Printed circuit boards for mounting a semiconductor integrated circuit die
JP3579740B2 (ja) * 1998-04-18 2004-10-20 Ｔｄｋ株式会社 電子部品の製造方法
US6049136A (en) * 1998-06-03 2000-04-11 Hewlett-Packard Company Integrated circuit having unique lead configuration
RU2134466C1 (ru) * 1998-12-08 1999-08-10 Таран Александр Иванович Носитель кристалла ис
JP3287408B2 (ja) * 1999-06-16 2002-06-04 日本電気株式会社 半導体装置および半導体基板貫通導体の形成方法
JP2001077500A (ja) * 1999-06-30 2001-03-23 Murata Mfg Co Ltd 電子部品、誘電体フィルタ、誘電体デュプレクサ、および電子部品の製造方法
DE10002852A1 (de) * 2000-01-24 2001-08-02 Infineon Technologies Ag Abschirmeinrichtung und elektrisches Bauteil mit einer Abschirmeinrichtung
US6465858B2 (en) * 2000-03-24 2002-10-15 Matsushita Electric Industrial Co., Ltd. Semiconductor device package for optical communication device
US6855385B2 (en) * 2000-05-31 2005-02-15 Ttm Advanced Circuits, Inc. PCB support plate for PCB via fill
KR20030007755A (ko) 2000-05-31 2003-01-23 허니웰 인터내셔날 인코포레이티드 채움 장치
US6800232B2 (en) * 2000-05-31 2004-10-05 Ttm Advanced Circuits, Inc. PCB support plate method for PCB via fill
CN1444839A (zh) * 2000-05-31 2003-09-24 Ttm先进电路公司 填充方法
US6506332B2 (en) * 2000-05-31 2003-01-14 Honeywell International Inc. Filling method
US6417563B1 (en) * 2000-07-14 2002-07-09 Advanced Micro Devices, Inc. Spring frame for protecting packaged electronic devices
US6653730B2 (en) 2000-12-14 2003-11-25 Intel Corporation Electronic assembly with high capacity thermal interface
US20030009878A1 (en) * 2001-07-12 2003-01-16 John Gregory Method for attaching an electronic component to a substrate
US6927471B2 (en) * 2001-09-07 2005-08-09 Peter C. Salmon Electronic system modules and method of fabrication
US7297572B2 (en) * 2001-09-07 2007-11-20 Hynix Semiconductor, Inc. Fabrication method for electronic system modules
US6495926B1 (en) * 2001-11-29 2002-12-17 Sun Microsystems, Inc. 60 degree bump placement layout for an integrated circuit power grid
KR100499003B1 (ko) * 2002-12-12 2005-07-01 삼성전기주식회사 도금 인입선을 사용하지 않는 패키지 기판 및 그 제조 방법
CA2455024A1 (en) * 2003-01-30 2004-07-30 Endicott Interconnect Technologies, Inc. Stacked chip electronic package having laminate carrier and method of making same
US7035113B2 (en) * 2003-01-30 2006-04-25 Endicott Interconnect Technologies, Inc. Multi-chip electronic package having laminate carrier and method of making same
US7109573B2 (en) * 2003-06-10 2006-09-19 Nokia Corporation Thermally enhanced component substrate
FR2884047A1 (fr) * 2005-03-31 2006-10-06 Intexys Sa Procede et dispositif d'encapsulation de composants electroniques et optoelectroniques
JP4611010B2 (ja) * 2004-12-10 2011-01-12 日立ビアメカニクス株式会社 多層回路基板の製造方法
TWI246760B (en) * 2004-12-22 2006-01-01 Siliconware Precision Industries Co Ltd Heat dissipating semiconductor package and fabrication method thereof
JP4860994B2 (ja) * 2005-12-06 2012-01-25 ルネサスエレクトロニクス株式会社 半導体装置
WO2007072575A1 (ja) * 2005-12-21 2007-06-28 Toyo Seikan Kaisha, Ltd. 容器詰め内容物の製造方法
US7607355B2 (en) * 2007-02-16 2009-10-27 Yamaha Corporation Semiconductor device
US7561430B2 (en) * 2007-04-30 2009-07-14 Watlow Electric Manufacturing Company Heat management system for a power switching device
US8426960B2 (en) * 2007-12-21 2013-04-23 Alpha & Omega Semiconductor, Inc. Wafer level chip scale packaging
JP4833307B2 (ja) * 2009-02-24 2011-12-07 インターナショナル・ビジネス・マシーンズ・コーポレーション 半導体モジュール、端子板、端子板の製造方法および半導体モジュールの製造方法
KR100950511B1 (ko) * 2009-09-22 2010-03-30 테세라 리써치 엘엘씨 와이어 본딩 및 도전성 기준 소자에 의해 제어되는 임피던스를 포함하는 마이크로전자 어셈블리
KR100935854B1 (ko) 2009-09-22 2010-01-08 테세라 리써치 엘엘씨 와이어 본딩 및 기준 와이어 본딩에 의해 제어되는 임피던스를 가진 마이크로전자 어셈블리
US8618654B2 (en) * 2010-07-20 2013-12-31 Marvell World Trade Ltd. Structures embedded within core material and methods of manufacturing thereof
GB2481836B (en) * 2010-07-08 2012-06-13 Keymat Technology Ltd Circuit board connector with drilling tamper detection arrangement
US8853708B2 (en) 2010-09-16 2014-10-07 Tessera, Inc. Stacked multi-die packages with impedance control
US8786083B2 (en) 2010-09-16 2014-07-22 Tessera, Inc. Impedance controlled packages with metal sheet or 2-layer RDL
US9136197B2 (en) 2010-09-16 2015-09-15 Tessera, Inc. Impedence controlled packages with metal sheet or 2-layer RDL
US8581377B2 (en) 2010-09-16 2013-11-12 Tessera, Inc. TSOP with impedance control
US8847412B2 (en) 2012-11-09 2014-09-30 Invensas Corporation Microelectronic assembly with thermally and electrically conductive underfill
KR101603285B1 (ko) 2014-03-24 2016-03-14 대남환경 주식회사 해상 오일 방제선
CN107949188A (zh) * 2017-11-16 2018-04-20 广东兴达鸿业电子有限公司 具有npth连孔的电路板加工方法

Family Cites Families (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4050756A (en) * 1975-12-22 1977-09-27 International Telephone And Telegraph Corporation Conductive elastomer connector and method of making same
US4218701A (en) * 1978-07-24 1980-08-19 Citizen Watch Co., Ltd. Package for an integrated circuit having a container with support bars
US4322778A (en) * 1980-01-25 1982-03-30 International Business Machines Corp. High performance semiconductor package assembly
US4483067A (en) * 1981-09-11 1984-11-20 U.S. Philips Corporation Method of manufacturing an identification card and an identification manufactured, for example, by this method
JPS58220451A (ja) * 1982-06-17 1983-12-22 Kyodo Printing Co Ltd Ｉｃモジユ−ル
JPS5999752A (ja) * 1982-11-29 1984-06-08 Toshiba Corp 混成集積回路装置
JPS60134446A (ja) * 1983-12-23 1985-07-17 Hitachi Ltd 半導体装置
FR2575331B1 (fr) * 1984-12-21 1987-06-05 Labo Electronique Physique Boitier pour composant electronique
FR2584235B1 (fr) * 1985-06-26 1988-04-22 Bull Sa Procede de montage d'un circuit integre sur un support, dispositif en resultant et son application a une carte a microcircuits electroniques
WO1987000686A1 (en) * 1985-07-16 1987-01-29 Nippon Telegraph And Telephone Corporation Connection terminals between substrates and method of producing the same
JPS6253000A (ja) * 1985-08-31 1987-03-07 日本電気株式会社 半導体の実装構造
JPS62136865A (ja) * 1985-12-11 1987-06-19 Hitachi Ltd モジユ−ル実装構造
US4843067A (en) * 1986-11-19 1989-06-27 Yaguang Liu Polysaccharide containing pharmaceutical composition for increasing the immune function
US5138438A (en) * 1987-06-24 1992-08-11 Akita Electronics Co. Ltd. Lead connections means for stacked tab packaged IC chips
US4978639A (en) * 1989-01-10 1990-12-18 Avantek, Inc. Method for the simultaneous formation of via-holes and wraparound plating on semiconductor chips
US4954313A (en) * 1989-02-03 1990-09-04 Amdahl Corporation Method and apparatus for filling high density vias
EP0382203B1 (de) * 1989-02-10 1995-04-26 Fujitsu Limited Keramische Packung vom Halbleiteranordnungstyp und Verfahren zum Zusammensetzen derselben
US4922376A (en) * 1989-04-10 1990-05-01 Unistructure, Inc. Spring grid array interconnection for active microelectronic elements
US4954878A (en) * 1989-06-29 1990-09-04 Digital Equipment Corp. Method of packaging and powering integrated circuit chips and the chip assembly formed thereby
JPH0344957A (ja) * 1989-07-12 1991-02-26 Fujitsu Ltd 半導体チップ実装用セラミック基板の製造方法
US5200362A (en) * 1989-09-06 1993-04-06 Motorola, Inc. Method of attaching conductive traces to an encapsulated semiconductor die using a removable transfer film
US4978638A (en) * 1989-12-21 1990-12-18 International Business Machines Corporation Method for attaching heat sink to plastic packaged electronic component
DE3943087C1 (de) * 1989-12-27 1990-11-29 Erhard 6900 Heidelberg De Lamberti
NO900229D0 (no) 1990-01-16 1990-01-16 Micro Electronics Ame A S Fremgangsmaate for fremstilling av miniatyrisert impedanstilpasset ledningsnett.
US5073814A (en) * 1990-07-02 1991-12-17 General Electric Company Multi-sublayer dielectric layers
JP3057766B2 (ja) * 1990-12-18 2000-07-04 日本ケミコン株式会社 厚膜多層回路基板及びその製造方法
US5166772A (en) 1991-02-22 1992-11-24 Motorola, Inc. Transfer molded semiconductor device package with integral shield
JPH04276631A (ja) * 1991-03-04 1992-10-01 Toshiba Corp 電界効果トランジスタの製造方法
JP2966972B2 (ja) 1991-07-05 1999-10-25 株式会社日立製作所 半導体チップキャリアとそれを実装したモジュール及びそれを組み込んだ電子機器
JP2936819B2 (ja) 1991-07-24 1999-08-23 日本電気株式会社 Ｉｃチップの実装構造
JPH0541471A (ja) * 1991-08-07 1993-02-19 Hitachi Ltd 半導体集積回路装置
JP2634516B2 (ja) * 1991-10-15 1997-07-30 三菱電機株式会社 反転型ｉｃの製造方法、反転型ｉｃ、ｉｃモジュール
JP2712967B2 (ja) * 1991-12-19 1998-02-16 日本電気株式会社 半導体装置
US5311402A (en) * 1992-02-14 1994-05-10 Nec Corporation Semiconductor device package having locating mechanism for properly positioning semiconductor device within package
JPH05326631A (ja) * 1992-05-15 1993-12-10 Rohm Co Ltd 半導体装置の実装構造
DE69329542T2 (de) * 1992-06-05 2001-02-08 Mitsui Chemicals Inc Dreidimensionale leiterplatte, elektronische bauelementanordnung unter verwendung dieser leiterplatte und herstellungsverfahren zu dieser leiterplatte
US5280413A (en) * 1992-09-17 1994-01-18 Ceridian Corporation Hermetically sealed circuit modules having conductive cap anchors
US5450290A (en) * 1993-02-01 1995-09-12 International Business Machines Corporation Printed circuit board with aligned connections and method of making same
US5703405A (en) * 1993-03-15 1997-12-30 Motorola, Inc. Integrated circuit chip formed from processing two opposing surfaces of a wafer
JP3034180B2 (ja) * 1994-04-28 2000-04-17 富士通株式会社 半導体装置及びその製造方法及び基板
JPH09326142A (ja) * 1996-06-05 1997-12-16 Matsushita Electric Ind Co Ltd 電子機器の画面操作装置

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KR100199437B1 (ko) 1999-06-15
US5729435A (en) 1998-03-17
US6088233A (en) 2000-07-11
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KR950030321A (ko) 1995-11-24
EP0685878B1 (de) 2010-06-23
EP1715512A2 (de) 2006-10-25
TW563902U (en) 2003-11-21
EP0685878A2 (de) 1995-12-06
TW559338U (en) 2003-10-21
EP0685878A3 (de) 1996-11-06
US5978222A (en) 1999-11-02
JPH0817964A (ja) 1996-01-19
US6184133B1 (en) 2001-02-06
EP1715512A3 (de) 2013-02-13
EP1198000A1 (de) 2002-04-17

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