DE69628702D1 - Höckerelektrode für Transistor und Verfahren zur Herstellung - Google Patents

Höckerelektrode für Transistor und Verfahren zur Herstellung

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Publication number
DE69628702D1
DE69628702D1 DE69628702T DE69628702T DE69628702D1 DE 69628702 D1 DE69628702 D1 DE 69628702D1 DE 69628702 T DE69628702 T DE 69628702T DE 69628702 T DE69628702 T DE 69628702T DE 69628702 D1 DE69628702 D1 DE 69628702D1
Authority
DE
Germany
Prior art keywords
transistor
manufacturing
bump electrode
bump
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69628702T
Other languages
English (en)
Other versions
DE69628702T2 (de
Inventor
Hiroya Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of DE69628702D1 publication Critical patent/DE69628702D1/de
Application granted granted Critical
Publication of DE69628702T2 publication Critical patent/DE69628702T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
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DE69628702T 1995-07-27 1996-07-26 Höckerelektrode für Transistor und Verfahren zur Herstellung Expired - Fee Related DE69628702T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP7192261A JPH0945692A (ja) 1995-07-27 1995-07-27 縦型構造トランジスタ及びその製造方法、並びに半導体装置
JP19226195 1995-07-27

Publications (2)

Publication Number Publication Date
DE69628702D1 true DE69628702D1 (de) 2003-07-24
DE69628702T2 DE69628702T2 (de) 2004-05-13

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DE69628702T Expired - Fee Related DE69628702T2 (de) 1995-07-27 1996-07-26 Höckerelektrode für Transistor und Verfahren zur Herstellung

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Country Link
US (1) US5831337A (de)
EP (1) EP0756324B1 (de)
JP (1) JPH0945692A (de)
DE (1) DE69628702T2 (de)

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US5804487A (en) * 1996-07-10 1998-09-08 Trw Inc. Method of fabricating high βHBT devices
JP3303791B2 (ja) * 1998-09-02 2002-07-22 株式会社村田製作所 電子部品の製造方法
US6297562B1 (en) 1999-09-20 2001-10-02 Telefonaktieboalget Lm Ericsson (Publ) Semiconductive chip having a bond pad located on an active device
US6482711B1 (en) 1999-10-28 2002-11-19 Hrl Laboratories, Llc InPSb/InAs BJT device and method of making
AU2001238081A1 (en) 2000-02-10 2001-08-20 International Rectifier Corporation Vertical conduction flip-chip device with bump contacts on single surface
WO2003034468A2 (en) * 2001-10-15 2003-04-24 Teraburst Networks, Inc. Crosstalk reduction in a crosspoint thyristor switching array using a shielded dielectric stack
JP2005327805A (ja) * 2004-05-12 2005-11-24 Renesas Technology Corp 半導体装置およびその製造方法
US7598134B2 (en) 2004-07-28 2009-10-06 Micron Technology, Inc. Memory device forming methods
US7768075B2 (en) 2006-04-06 2010-08-03 Fairchild Semiconductor Corporation Semiconductor die packages using thin dies and metal substrates
JP4949790B2 (ja) * 2006-09-26 2012-06-13 株式会社テラミクロス 半導体装置の製造方法
US8921986B2 (en) * 2013-03-15 2014-12-30 Microchip Technology Incorporated Insulated bump bonding
CN105849873B (zh) 2014-01-10 2019-01-11 株式会社村田制作所 半导体装置
JP2016012690A (ja) * 2014-06-30 2016-01-21 セイコーインスツル株式会社 半導体装置の製造方法
WO2018004521A1 (en) * 2016-06-27 2018-01-04 Intel Corporation Broken bandgap contact

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US5084750A (en) * 1991-02-20 1992-01-28 Raytheon Company Push-pull heterojunction bipolar transistor
US5349239A (en) * 1991-07-04 1994-09-20 Sharp Kabushiki Kaisha Vertical type construction transistor
JP3084541B2 (ja) * 1992-09-18 2000-09-04 シャープ株式会社 縦型構造トランジスタ
JP3268064B2 (ja) * 1993-06-08 2002-03-25 シャープ株式会社 半導体装置

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EP0756324B1 (de) 2003-06-18
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EP0756324A3 (de) 1999-06-30
EP0756324A2 (de) 1997-01-29
US5831337A (en) 1998-11-03

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