DE69615959T2 - Piezoelektrische Anordnung und Verfahren zur Herstellung - Google Patents

Piezoelektrische Anordnung und Verfahren zur Herstellung

Info

Publication number
DE69615959T2
DE69615959T2 DE69615959T DE69615959T DE69615959T2 DE 69615959 T2 DE69615959 T2 DE 69615959T2 DE 69615959 T DE69615959 T DE 69615959T DE 69615959 T DE69615959 T DE 69615959T DE 69615959 T2 DE69615959 T2 DE 69615959T2
Authority
DE
Germany
Prior art keywords
manufacturing
piezoelectric device
piezoelectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69615959T
Other languages
English (en)
Other versions
DE69615959D1 (de
Inventor
Akihiko Namba
Tetsuyosi Ogura
Yosihiro Tomita
Kazuo Eda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of DE69615959D1 publication Critical patent/DE69615959D1/de
Application granted granted Critical
Publication of DE69615959T2 publication Critical patent/DE69615959T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
    • H10N30/085—Shaping or machining of piezoelectric or electrostrictive bodies by machining
    • H10N30/088—Shaping or machining of piezoelectric or electrostrictive bodies by machining by cutting or dicing

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Dicing (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
DE69615959T 1995-07-19 1996-07-19 Piezoelektrische Anordnung und Verfahren zur Herstellung Expired - Fee Related DE69615959T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP18246895 1995-07-19
US08/677,548 US5759753A (en) 1995-07-19 1996-07-18 Piezoelectric device and method of manufacturing the same

Publications (2)

Publication Number Publication Date
DE69615959D1 DE69615959D1 (de) 2001-11-22
DE69615959T2 true DE69615959T2 (de) 2002-04-25

Family

ID=47638291

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69615959T Expired - Fee Related DE69615959T2 (de) 1995-07-19 1996-07-19 Piezoelektrische Anordnung und Verfahren zur Herstellung

Country Status (3)

Country Link
US (2) US5759753A (de)
EP (1) EP0755085B1 (de)
DE (1) DE69615959T2 (de)

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FR2751467B1 (fr) * 1996-07-17 1998-10-02 Commissariat Energie Atomique Procede d'assemblage de deux structures et dispositif obtenu par le procede. applications aux microlasers
US6963155B1 (en) 1997-04-24 2005-11-08 Mitsubishi Denki Kabushiki Kaisha Film acoustic wave device, manufacturing method and circuit device
US5882986A (en) * 1998-03-30 1999-03-16 General Semiconductor, Inc. Semiconductor chips having a mesa structure provided by sawing
US6235612B1 (en) * 1998-06-10 2001-05-22 Texas Instruments Incorporated Edge bond pads on integrated circuits
TW427059B (en) * 1998-08-07 2001-03-21 Tdk Corp Resonator, piezoelectric resonator and the manufacturing method thereof
US6236141B1 (en) 1998-12-14 2001-05-22 Matsushita Electric Industrial Co., Ltd. Surface acoustic wave element
JP3473538B2 (ja) * 1999-05-14 2003-12-08 株式会社村田製作所 圧電部品の周波数調整装置及び周波数調整方法
US6984571B1 (en) 1999-10-01 2006-01-10 Ziptronix, Inc. Three dimensional device integration method and integrated device
US6500694B1 (en) * 2000-03-22 2002-12-31 Ziptronix, Inc. Three dimensional device integration method and integrated device
US6902987B1 (en) 2000-02-16 2005-06-07 Ziptronix, Inc. Method for low temperature bonding and bonded structure
US6563133B1 (en) * 2000-08-09 2003-05-13 Ziptronix, Inc. Method of epitaxial-like wafer bonding at low temperature and bonded structure
US6962834B2 (en) * 2002-03-22 2005-11-08 Stark David H Wafer-level hermetic micro-device packages
US7832177B2 (en) * 2002-03-22 2010-11-16 Electronics Packaging Solutions, Inc. Insulated glazing units
US7109092B2 (en) 2003-05-19 2006-09-19 Ziptronix, Inc. Method of room temperature covalent bonding
FR2857502B1 (fr) * 2003-07-10 2006-02-24 Soitec Silicon On Insulator Substrats pour systemes contraints
US7266869B2 (en) * 2003-07-30 2007-09-11 Kyocera Corporation Method for manufacturing a piezoelectric oscillator
KR100571848B1 (ko) * 2005-01-05 2006-04-17 삼성전자주식회사 실리콘 직접 접합 방법
JP4240087B2 (ja) * 2006-08-09 2009-03-18 船井電機株式会社 形状可変ミラーの製造方法
US7851333B2 (en) * 2007-03-15 2010-12-14 Infineon Technologies Ag Apparatus comprising a device and method for producing it
JP5123573B2 (ja) * 2007-06-13 2013-01-23 ローム株式会社 半導体発光素子およびその製造方法
WO2009036359A1 (en) 2007-09-14 2009-03-19 Electronics Packaging Solutions, Inc. Insulating glass unit having multi-height internal standoffs and visible decoration
WO2010019484A2 (en) 2008-08-09 2010-02-18 Eversealed Windows, Inc. Asymmetrical flexible edge seal for vacuum insulating glass
US8329267B2 (en) 2009-01-15 2012-12-11 Eversealed Windows, Inc. Flexible edge seal for vacuum insulating glazing units
US8512830B2 (en) 2009-01-15 2013-08-20 Eversealed Windows, Inc. Filament-strung stand-off elements for maintaining pane separation in vacuum insulating glazing units
WO2011153381A2 (en) 2010-06-02 2011-12-08 Eversealed Windows, Inc. Multi-pane glass unit having seal with adhesive and hermetic coating layer
JP5720152B2 (ja) * 2010-09-06 2015-05-20 富士通株式会社 振動子の作製方法、振動子および発振器
US8871355B1 (en) * 2010-10-08 2014-10-28 Clemson University Microstructure enhanced sinter bonding of metal injection molded part to a support substrate
KR101623099B1 (ko) * 2010-12-24 2016-05-20 가부시키가이샤 무라타 세이사쿠쇼 탄성파 장치 및 그 제조 방법
DE102011016566A1 (de) * 2011-03-07 2012-09-13 Osram Opto Semiconductors Gmbh Leiterrahmen für optoelektronische Bauelemente und Verfahren zur Herstellung optoelektronischer Bauelemente
US9328512B2 (en) 2011-05-05 2016-05-03 Eversealed Windows, Inc. Method and apparatus for an insulating glazing unit and compliant seal for an insulating glazing unit
JP6062429B2 (ja) * 2011-07-15 2017-01-18 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 半導体デバイスを支持基板に接合する方法
JP5882053B2 (ja) * 2011-12-28 2016-03-09 太陽誘電株式会社 弾性波デバイスの製造方法
WO2014027538A1 (ja) 2012-08-17 2014-02-20 日本碍子株式会社 複合基板，弾性表面波デバイス及び複合基板の製造方法
CN104871431B (zh) 2012-12-26 2018-04-10 日本碍子株式会社 复合基板及其制造方法，以及弹性波装置
US20160229689A1 (en) * 2015-02-11 2016-08-11 Analog Devices, Inc. Packaged Microchip with Patterned Interposer
FR3037443B1 (fr) 2015-06-12 2018-07-13 Soitec Heterostructure et methode de fabrication
FR3042649B1 (fr) * 2015-10-20 2019-06-21 Soitec Procede de fabrication d'une structure hybride
EP3196952B1 (de) * 2016-01-21 2019-06-19 AT & S Austria Technologie & Systemtechnik Aktiengesellschaft Piezoelektrischer mems-wandler, der an einer leiterplattentragstruktur ausgebildet ist
JP2018148071A (ja) 2017-03-07 2018-09-20 東芝メモリ株式会社 記憶装置

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Publication number Priority date Publication date Assignee Title
FR2266395B1 (de) * 1974-03-26 1980-10-31 Thomson Csf
JPS6382100A (ja) * 1986-09-26 1988-04-12 Hitachi Ltd 圧電素子およびその製造方法
US5441803A (en) * 1988-08-30 1995-08-15 Onyx Optics Composites made from single crystal substances
US5747857A (en) * 1991-03-13 1998-05-05 Matsushita Electric Industrial Co., Ltd. Electronic components having high-frequency elements and methods of manufacture therefor
WO1992019564A1 (en) * 1991-05-01 1992-11-12 The Regents Of The University Of California Amorphous ferroelectric materials
US5199298A (en) * 1991-06-21 1993-04-06 Massachusetts Institute Of Technology Wall shear stress sensor
EP0594117B1 (de) * 1992-10-20 1998-12-09 Matsushita Electric Industrial Co., Ltd. Piezoelektrisches Filter und Verfahren zu seiner Herstellung
EP0616426B1 (de) * 1993-03-15 1998-09-16 Matsushita Electric Industrial Co., Ltd. Akustische Oberflächenwellenanordnung mit laminierter Struktur
US5521454A (en) * 1993-09-16 1996-05-28 Matsushita Electric Industrial Co., Ltd. Surface wave filter element
US5448126A (en) * 1993-10-05 1995-09-05 Matsushita Electric Industrial Co., Ltd. Surface acoustic wave-semiconductor composite device
EP0651449B1 (de) * 1993-11-01 2002-02-13 Matsushita Electric Industrial Co., Ltd. Elektronische Anordnung und Verfahren zur Herstellung
DE69609559T2 (de) * 1995-05-08 2001-04-19 Matsushita Electric Ind Co Ltd Verfahren zur Herstellung eines Verbundsubstrats und eine dieses Substrat benutzende piezoelektrischer Anordnung

Also Published As

Publication number Publication date
EP0755085A1 (de) 1997-01-22
DE69615959D1 (de) 2001-11-22
EP0755085B1 (de) 2001-10-17
US5759753A (en) 1998-06-02
US5982010A (en) 1999-11-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee