DE69709230D1 - Verfahren und Vorrichtung zur Herstellung Halbleitern - Google Patents

Verfahren und Vorrichtung zur Herstellung Halbleitern

Info

Publication number
DE69709230D1
DE69709230D1 DE69709230T DE69709230T DE69709230D1 DE 69709230 D1 DE69709230 D1 DE 69709230D1 DE 69709230 T DE69709230 T DE 69709230T DE 69709230 T DE69709230 T DE 69709230T DE 69709230 D1 DE69709230 D1 DE 69709230D1
Authority
DE
Germany
Prior art keywords
manufacturing semiconductors
semiconductors
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69709230T
Other languages
English (en)
Other versions
DE69709230T2 (de
Inventor
Kosei Takahashi
Sadayoshi Matsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of DE69709230D1 publication Critical patent/DE69709230D1/de
Publication of DE69709230T2 publication Critical patent/DE69709230T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C23C14/566—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber
DE69709230T 1996-05-09 1997-05-06 Verfahren und Vorrichtung zur Herstellung Halbleitern Expired - Fee Related DE69709230T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11510896A JP3555717B2 (ja) 1996-05-09 1996-05-09 半導体製造方法

Publications (2)

Publication Number Publication Date
DE69709230D1 true DE69709230D1 (de) 2002-01-31
DE69709230T2 DE69709230T2 (de) 2002-07-18

Family

ID=14654441

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69709230T Expired - Fee Related DE69709230T2 (de) 1996-05-09 1997-05-06 Verfahren und Vorrichtung zur Herstellung Halbleitern

Country Status (4)

Country Link
US (1) US6206969B1 (de)
EP (1) EP0806499B1 (de)
JP (1) JP3555717B2 (de)
DE (1) DE69709230T2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2807951B1 (fr) * 2000-04-20 2003-05-16 Cit Alcatel Procede et systeme de pompage des chambres de transfert d'equipement de semi-conducteur
GB2363129A (en) * 2000-05-04 2001-12-12 Boc Group Plc Gas supply method and apparatus
US6888170B2 (en) * 2002-03-15 2005-05-03 Cornell Research Foundation, Inc. Highly doped III-nitride semiconductors
US6953740B2 (en) * 2002-03-15 2005-10-11 Cornell Research Foundation, Inc. Highly doped III-nitride semiconductors
EP1646078A4 (de) * 2003-07-15 2009-09-02 Nippon Mining Co Epitaxial-wachstumsprozess
DE50309926D1 (de) * 2003-10-16 2008-07-10 Straumann Holding Ag Verbessertes Übertragungsteil für ein Implantat
US7368368B2 (en) 2004-08-18 2008-05-06 Cree, Inc. Multi-chamber MOCVD growth apparatus for high performance/high throughput
DE102007054851A1 (de) 2007-11-16 2009-05-20 Createc Fischer & Co. Gmbh MBE-Einrichtung und Verfahren zu deren Betrieb
DE102012104013A1 (de) * 2012-05-08 2013-11-14 Schmid Vacuum Technology Gmbh Hochvakuumanlage und Verfahren zum Evakuieren
JP6150716B2 (ja) * 2013-12-02 2017-06-21 住友重機械工業株式会社 コールドトラップ
US9994956B2 (en) * 2014-08-11 2018-06-12 University Of Kansas Apparatus for in situ deposition of multilayer structures via atomic layer deposition and ultra-high vacuum physical or chemical vapor deposition
US10593871B2 (en) 2017-07-10 2020-03-17 University Of Kansas Atomic layer deposition of ultrathin tunnel barriers

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0245698B2 (ja) * 1984-07-18 1990-10-11 Rohm Kk Shinkusochinokudohoho
JPS61107720A (ja) * 1984-10-31 1986-05-26 Hitachi Ltd 分子線エピタキシ装置
JP2607239B2 (ja) 1985-03-29 1997-05-07 シャープ株式会社 分子線エピタキシヤル装置
JPS61223608A (ja) 1985-03-29 1986-10-04 Toshiba Corp 走行軌跡記録装置
JPS63224214A (ja) * 1987-03-13 1988-09-19 Hitachi Ltd 分子線エピタキシ装置
JPH03201426A (ja) * 1989-12-28 1991-09-03 Mitsui Mining & Smelting Co Ltd 気相分子線エピタキシー装置
JPH04326943A (ja) * 1991-04-25 1992-11-16 Hitachi Ltd 真空排気システム及び排気方法
US5447568A (en) * 1991-12-26 1995-09-05 Canon Kabushiki Kaisha Chemical vapor deposition method and apparatus making use of liquid starting material

Also Published As

Publication number Publication date
JP3555717B2 (ja) 2004-08-18
DE69709230T2 (de) 2002-07-18
JPH09298159A (ja) 1997-11-18
EP0806499B1 (de) 2001-12-19
EP0806499A1 (de) 1997-11-12
US6206969B1 (en) 2001-03-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee