DE69738152D1 - Photovoltaisches Bauelement und Verfahren zur Herstellung desselben - Google Patents

Photovoltaisches Bauelement und Verfahren zur Herstellung desselben

Info

Publication number
DE69738152D1
DE69738152D1 DE69738152T DE69738152T DE69738152D1 DE 69738152 D1 DE69738152 D1 DE 69738152D1 DE 69738152 T DE69738152 T DE 69738152T DE 69738152 T DE69738152 T DE 69738152T DE 69738152 D1 DE69738152 D1 DE 69738152D1
Authority
DE
Germany
Prior art keywords
producing
same
photovoltaic device
photovoltaic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69738152T
Other languages
English (en)
Other versions
DE69738152T2 (de
Inventor
Shotaro Okabe
Yasushi Fujioka
Masahiro Kanai
Akira Sakai
Tadashi Sawayama
Yuzo Kohda
Tadashi Hori
Takahiro Yajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE69738152D1 publication Critical patent/DE69738152D1/de
Application granted granted Critical
Publication of DE69738152T2 publication Critical patent/DE69738152T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
    • H01L31/076—Multiple junction or tandem solar cells
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
    • H01L31/204—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System including AIVBIV alloys, e.g. SiGe, SiC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/206—Particular processes or apparatus for continuous treatment of the devices, e.g. roll-to roll processes, multi-chamber deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
DE69738152T 1996-09-05 1997-09-04 Photovoltaisches Bauelement und Verfahren zur Herstellung desselben Expired - Lifetime DE69738152T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP25553596 1996-09-05
JP25553596A JP3437386B2 (ja) 1996-09-05 1996-09-05 光起電力素子、並びにその製造方法

Publications (2)

Publication Number Publication Date
DE69738152D1 true DE69738152D1 (de) 2007-10-31
DE69738152T2 DE69738152T2 (de) 2008-06-12

Family

ID=17280090

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69738152T Expired - Lifetime DE69738152T2 (de) 1996-09-05 1997-09-04 Photovoltaisches Bauelement und Verfahren zur Herstellung desselben

Country Status (7)

Country Link
US (4) US6162988A (de)
EP (1) EP0828301B1 (de)
JP (1) JP3437386B2 (de)
KR (1) KR19980024365A (de)
CN (2) CN1269189C (de)
AU (1) AU745938B2 (de)
DE (1) DE69738152T2 (de)

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* Cited by examiner, † Cited by third party
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JP4208281B2 (ja) * 1998-02-26 2009-01-14 キヤノン株式会社 積層型光起電力素子
JPH11354820A (ja) 1998-06-12 1999-12-24 Sharp Corp 光電変換素子及びその製造方法
JP3797642B2 (ja) * 1998-07-28 2006-07-19 キヤノン株式会社 プラズマｃｖｄ法による薄膜半導体の作製方法
JP2002020863A (ja) 2000-05-01 2002-01-23 Canon Inc 堆積膜の形成方法及び形成装置、及び基板処理方法
JP3862615B2 (ja) * 2002-06-10 2006-12-27 キヤノン株式会社 シリコン系薄膜形成装置およびシリコン系薄膜形成方法
JP2004335823A (ja) * 2003-05-09 2004-11-25 Canon Inc 光起電力素子及び光起電力素子の形成方法
US7902049B2 (en) * 2004-01-27 2011-03-08 United Solar Ovonic Llc Method for depositing high-quality microcrystalline semiconductor materials
DE102004040922A1 (de) * 2004-08-24 2006-03-02 Robert Bosch Gmbh Wechselhandwerkzeugakkueinheit, Handwerkzeugmaschine und Ladevorrichtung
JP2008115460A (ja) * 2006-10-12 2008-05-22 Canon Inc 半導体素子の形成方法及び光起電力素子の形成方法
US7501305B2 (en) * 2006-10-23 2009-03-10 Canon Kabushiki Kaisha Method for forming deposited film and photovoltaic element
JP4484886B2 (ja) * 2007-01-23 2010-06-16 シャープ株式会社 積層型光電変換装置の製造方法
KR100886383B1 (ko) * 2007-04-05 2009-03-02 (주)실리콘화일 적층구조를 갖는 결정질 태양전지 및 그 제조 방법
JP2010533796A (ja) * 2007-07-17 2010-10-28 アプライド マテリアルズ インコーポレイテッド 圧力制御された遠隔プラズマ源による洗浄率の改善
DE102007033444A1 (de) * 2007-07-18 2009-01-29 Schott Solar Gmbh Silizium-Mehrfachsolarzelle und Verfahren zu deren Herstellung
CN101556972B (zh) * 2008-04-11 2011-11-30 福建钧石能源有限公司 基于氢化硅的薄膜本征层、薄膜太阳能电池及制造方法
KR101531700B1 (ko) * 2008-12-01 2015-06-25 주성엔지니어링(주) 박막형 태양전지의 제조방법
US20110262641A1 (en) * 2010-04-26 2011-10-27 Aventa Systems, Llc Inline chemical vapor deposition system
US8865259B2 (en) 2010-04-26 2014-10-21 Singulus Mocvd Gmbh I.Gr. Method and system for inline chemical vapor deposition
US9076909B2 (en) * 2010-06-18 2015-07-07 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method for manufacturing the same
KR101356536B1 (ko) * 2011-06-15 2014-01-28 주식회사 테스 태양 전지 제조 시스템
CN103426788B (zh) * 2012-05-21 2016-09-14 理想能源设备(上海)有限公司 在集成系统中制作半导体器件及调节基板温度的方法

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DE3280455T3 (de) * 1981-11-04 2000-07-13 Kanegafuchi Chemical Ind Biegsame photovoltaische Vorrichtung.
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DE4324320B4 (de) * 1992-07-24 2006-08-31 Fuji Electric Co., Ltd., Kawasaki Verfahren und Vorrichtung zur Herstellung einer als dünne Schicht ausgebildeten fotovoltaischen Umwandlungsvorrichtung
JP2695585B2 (ja) * 1992-12-28 1997-12-24 キヤノン株式会社 光起電力素子及びその製造方法、並びにそれを用いた発電装置
DE69410301T2 (de) * 1993-01-29 1998-09-24 Canon Kk Verfahren zur Herstellung funktioneller niedergeschlagener Schichten
JP2984537B2 (ja) * 1994-03-25 1999-11-29 キヤノン株式会社 光起電力素子
JPH0992860A (ja) 1995-09-28 1997-04-04 Canon Inc 光起電力素子
JPH09199431A (ja) * 1996-01-17 1997-07-31 Canon Inc 薄膜形成方法および薄膜形成装置
EP0831538A3 (de) * 1996-09-19 1999-07-14 Canon Kabushiki Kaisha Photovoltaisches Bauelement mit einer spezifisch dotierten Schicht
JPH11317538A (ja) * 1998-02-17 1999-11-16 Canon Inc 光導電性薄膜および光起電力素子

Also Published As

Publication number Publication date
AU745938B2 (en) 2002-04-11
US20030124819A1 (en) 2003-07-03
JP3437386B2 (ja) 2003-08-18
CN1269189C (zh) 2006-08-09
EP0828301A3 (de) 1999-07-14
US20050161077A1 (en) 2005-07-28
US6162988A (en) 2000-12-19
JPH1084124A (ja) 1998-03-31
CN1186347A (zh) 1998-07-01
EP0828301A2 (de) 1998-03-11
AU3685397A (en) 1998-03-12
CN1156022C (zh) 2004-06-30
KR19980024365A (ko) 1998-07-06
US6368944B1 (en) 2002-04-09
CN1507011A (zh) 2004-06-23
EP0828301B1 (de) 2007-09-19
DE69738152T2 (de) 2008-06-12

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