DE69524940D1 - Halbleiterlaser und Verfahren zu seiner Herstellung - Google Patents

Halbleiterlaser und Verfahren zu seiner Herstellung

Info

Publication number
DE69524940D1
DE69524940D1 DE69524940T DE69524940T DE69524940D1 DE 69524940 D1 DE69524940 D1 DE 69524940D1 DE 69524940 T DE69524940 T DE 69524940T DE 69524940 T DE69524940 T DE 69524940T DE 69524940 D1 DE69524940 D1 DE 69524940D1
Authority
DE
Germany
Prior art keywords
manufacture
semiconductor laser
laser
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69524940T
Other languages
English (en)
Other versions
DE69524940T2 (de
Inventor
Yoshihiro Hisa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE69524940D1 publication Critical patent/DE69524940D1/de
Application granted granted Critical
Publication of DE69524940T2 publication Critical patent/DE69524940T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/11—Comprising a photonic bandgap structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1225—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers with a varying coupling constant along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1231—Grating growth or overgrowth details

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE69524940T 1995-03-17 1995-08-18 Halbleiterlaser und Verfahren zu seiner Herstellung Expired - Fee Related DE69524940T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7059256A JPH08255954A (ja) 1995-03-17 1995-03-17 半導体レーザの構造及びその製造方法

Publications (2)

Publication Number Publication Date
DE69524940D1 true DE69524940D1 (de) 2002-02-14
DE69524940T2 DE69524940T2 (de) 2002-08-29

Family

ID=13108128

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69524940T Expired - Fee Related DE69524940T2 (de) 1995-03-17 1995-08-18 Halbleiterlaser und Verfahren zu seiner Herstellung

Country Status (4)

Country Link
US (1) US5659562A (de)
EP (1) EP0732783B1 (de)
JP (1) JPH08255954A (de)
DE (1) DE69524940T2 (de)

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KR970055001A (ko) * 1995-12-22 1997-07-31 양승택 조화 수동 모드 록킹의 반도체 레이저
JP3298619B2 (ja) 1998-06-10 2002-07-02 日本電気株式会社 半導体レーザの製造方法
JP3191784B2 (ja) * 1998-10-29 2001-07-23 日本電気株式会社 回折格子の製造方法及び半導体レーザの製造方法
JP2000137126A (ja) * 1998-10-30 2000-05-16 Toshiba Corp 光機能素子
JP2001036192A (ja) * 1999-07-22 2001-02-09 Nec Corp 分布帰還型半導体レーザおよびその製造方法
US6426233B1 (en) * 1999-08-03 2002-07-30 Micron Technology, Inc. Uniform emitter array for display devices, etch mask for the same, and methods for making the same
GB2369187A (en) * 2000-11-18 2002-05-22 Mitel Corp Inspecting etch in a microstructure
JP3682417B2 (ja) * 2001-05-01 2005-08-10 古河電気工業株式会社 半導体レーザ装置、半導体レーザモジュールおよびこれを用いたラマン増幅器
JP5143985B2 (ja) * 2001-08-10 2013-02-13 古河電気工業株式会社 分布帰還型半導体レーザ素子
US6845117B2 (en) * 2001-11-02 2005-01-18 The Furukawa Electric Co., Ltd. Semiconductor laser device, semiconductor laser module, and optical fiber amplifier using the device or module
US6903379B2 (en) * 2001-11-16 2005-06-07 Gelcore Llc GaN based LED lighting extraction efficiency using digital diffractive phase grating
US6608855B1 (en) * 2002-05-31 2003-08-19 Applied Optoelectronics, Inc. Single-mode DBR laser with improved phase-shift section
US7180930B2 (en) * 2002-06-20 2007-02-20 The Furukawa Electric Co., Ltd. DFB semiconductor laser device having ununiform arrangement of a diffraction grating
US7065123B2 (en) * 2002-06-27 2006-06-20 Anritsu Corporation Distributed feedback semiconductor laser for outputting beam of single wavelength
US6965628B1 (en) * 2002-10-30 2005-11-15 Finisar Corporation Distributed feedback laser having a differential grating
US8505824B2 (en) * 2007-06-28 2013-08-13 Symbol Technologies, Inc. Bar code readers having multifold mirrors
JPWO2009116140A1 (ja) 2008-03-18 2011-07-21 富士通株式会社 光半導体素子及びその製造方法
WO2009116152A1 (ja) 2008-03-19 2009-09-24 富士通株式会社 光素子及びその製造方法
DE102008054217A1 (de) * 2008-10-31 2010-05-06 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
WO2010116460A1 (ja) * 2009-03-30 2010-10-14 富士通株式会社 光素子及びその製造方法
US20120106583A1 (en) 2010-11-02 2012-05-03 Onechip Photonics Inc. Vertically-coupled surface-etched grating dfb laser
JP5895880B2 (ja) * 2013-03-18 2016-03-30 ソニー株式会社 光学素子、投射型画像表示装置および原盤
JP6155770B2 (ja) 2013-03-29 2017-07-05 富士通株式会社 光素子及び光モジュール
KR102067376B1 (ko) * 2013-05-21 2020-01-17 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조방법
JP2015138905A (ja) * 2014-01-23 2015-07-30 三菱電機株式会社 分布帰還型半導体レーザ素子、分布帰還型半導体レーザ素子の製造方法
EP2908392B8 (de) * 2014-02-13 2018-05-16 Alcatel Lucent Abstimmbare Laservorrichtung
JP6483521B2 (ja) * 2015-05-21 2019-03-13 日本電信電話株式会社 半導体レーザ
JP2018519666A (ja) * 2015-06-30 2018-07-19 フォルシュングスフェアブント ベルリン エー ファウＦｏｒｓｃｈｕｎｇｓｖｅｒｂｕｎｄ Ｂｅｒｌｉｎ ｅ．Ｖ． 分布帰還型レーザーダイオード及びその製造方法
JP6510391B2 (ja) * 2015-12-09 2019-05-08 日本電信電話株式会社 半導体レーザ
JP2018006440A (ja) * 2016-06-29 2018-01-11 日本電信電話株式会社 半導体レーザ
CN107765362A (zh) * 2017-11-27 2018-03-06 电子科技大学 一种基于石墨烯的电光可调d型啁啾光纤光栅
FI130103B (fi) * 2020-12-22 2023-03-01 Dispelix Oy Diffraktiivisen optisen elementin hilan leimasimen ja master-mallin valmistusmenetelmä, master-malli ja leimasin
CN113948969A (zh) * 2021-09-03 2022-01-18 中国工程物理研究院应用电子学研究所 一种高效率半导体激光器

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2619057B2 (ja) 1989-05-22 1997-06-11 三菱電機株式会社 半導体レーザの製造方法
CA2023510C (en) * 1989-08-18 1994-03-29 Yuji Ohkura Single wavelength oscillating semiconductor laser device and method for manufacturing diffraction grating
NL9000164A (nl) * 1990-01-23 1991-08-16 Imec Inter Uni Micro Electr Laseropbouw met gedistribueerde terugkoppeling en werkwijze ter vervaardiging daarvan.
US5185759A (en) * 1990-06-12 1993-02-09 Kabushiki Kaisha Toshiba Phase-shifted distributed feedback type semiconductor laser device
JPH04111383A (ja) 1990-08-30 1992-04-13 Nec Kansai Ltd 位相シフト分布帰還型レーザダイオード
JP2982422B2 (ja) * 1991-09-20 1999-11-22 三菱電機株式会社 半導体レーザおよびその製造方法
JPH05136521A (ja) * 1991-11-13 1993-06-01 Fujitsu Ltd 半導体レーザ
DE4322163A1 (de) * 1993-07-03 1995-01-12 Ant Nachrichtentech Auf DFB- oder DBR-Gitter basierendes optoelektronisches Bauelement mit quasi-kontinuierlich axial verteilbarer Brechungsindex-Variation, mit axial beliebig verteilbarer und variierbarer Phasenverschiebung, sowie mit axial quasi-kontinuierlich variierbarem Gitter-Kopplungskoeffizienten

Also Published As

Publication number Publication date
DE69524940T2 (de) 2002-08-29
US5659562A (en) 1997-08-19
EP0732783B1 (de) 2002-01-09
EP0732783A1 (de) 1996-09-18
JPH08255954A (ja) 1996-10-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee