DE69201286D1 - Halbleiterlaser und Verfahren zu seiner Herstellung. - Google Patents

Halbleiterlaser und Verfahren zu seiner Herstellung.

Info

Publication number
DE69201286D1
DE69201286D1 DE69201286T DE69201286T DE69201286D1 DE 69201286 D1 DE69201286 D1 DE 69201286D1 DE 69201286 T DE69201286 T DE 69201286T DE 69201286 T DE69201286 T DE 69201286T DE 69201286 D1 DE69201286 D1 DE 69201286D1
Authority
DE
Germany
Prior art keywords
manufacture
semiconductor laser
laser
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69201286T
Other languages
English (en)
Other versions
DE69201286T2 (de
Inventor
Yoshiyuki Hirayama
Hitoshi Shimizu
Sumio Sugata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Furukawa Electric Co Ltd
Original Assignee
Furukawa Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Furukawa Electric Co Ltd filed Critical Furukawa Electric Co Ltd
Application granted granted Critical
Publication of DE69201286D1 publication Critical patent/DE69201286D1/de
Publication of DE69201286T2 publication Critical patent/DE69201286T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/305—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table characterised by the doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3077—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure plane dependent doping
    • H01S5/3081—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure plane dependent doping using amphoteric doping

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
DE69201286T 1991-08-22 1992-08-24 Halbleiterlaser und Verfahren zu seiner Herstellung. Expired - Fee Related DE69201286T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3237197A JPH0555711A (ja) 1991-08-22 1991-08-22 半導体レーザ素子とその製造方法

Publications (2)

Publication Number Publication Date
DE69201286D1 true DE69201286D1 (de) 1995-03-09
DE69201286T2 DE69201286T2 (de) 1995-05-24

Family

ID=17011813

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69201286T Expired - Fee Related DE69201286T2 (de) 1991-08-22 1992-08-24 Halbleiterlaser und Verfahren zu seiner Herstellung.

Country Status (4)

Country Link
US (1) US5375137A (de)
EP (1) EP0529990B1 (de)
JP (1) JPH0555711A (de)
DE (1) DE69201286T2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3310514B2 (ja) * 1995-12-22 2002-08-05 シャープ株式会社 半導体装置
JP2002033552A (ja) * 2000-05-11 2002-01-31 Furukawa Electric Co Ltd:The 半導体レーザ素子、半導体エッチング液および半導体レーザ素子の製造方法
JP4124017B2 (ja) * 2003-05-12 2008-07-23 ソニー株式会社 面発光型半導体レーザ素子の製造方法
EP1879221A4 (de) * 2005-04-25 2011-08-03 Riber Verfahren zur maskenbildung und verfahren zur dreidimensionalen mikrofabrikation
JP4797782B2 (ja) * 2006-04-28 2011-10-19 住友電気工業株式会社 半導体光素子
KR102352777B1 (ko) * 2014-12-23 2022-01-19 인텔 코포레이션 확산 허용 iii-v족 반도체 헤테로구조물 및 이를 포함하는 디바이스
US10497814B2 (en) 2014-12-23 2019-12-03 Intel Corporation III-V semiconductor alloys for use in the subfin of non-planar semiconductor devices and methods of forming the same
US9601659B2 (en) 2015-01-06 2017-03-21 Apple Inc. LED structures for reduced non-radiative sidewall recombination
US9484492B2 (en) 2015-01-06 2016-11-01 Apple Inc. LED structures for reduced non-radiative sidewall recombination
US9865772B2 (en) 2015-01-06 2018-01-09 Apple Inc. LED structures for reduced non-radiative sidewall recombination
CN110402524B (zh) * 2017-03-16 2021-04-16 新唐科技日本株式会社 半导体激光装置、半导体激光模块以及焊接用激光源系统

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0261262B1 (de) * 1986-09-23 1992-06-17 International Business Machines Corporation Streifenlaser mit transversalem Übergang
US4785457A (en) * 1987-05-11 1988-11-15 Rockwell International Corporation Heterostructure semiconductor laser
JPH0529713A (ja) * 1991-07-22 1993-02-05 Sharp Corp 半導体レーザ素子

Also Published As

Publication number Publication date
EP0529990A1 (de) 1993-03-03
JPH0555711A (ja) 1993-03-05
DE69201286T2 (de) 1995-05-24
US5375137A (en) 1994-12-20
EP0529990B1 (de) 1995-01-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee