DE69818720D1 - Heteroübergangsfeldeffekttransistor und Verfahren zu dessen Herstellung - Google Patents

Heteroübergangsfeldeffekttransistor und Verfahren zu dessen Herstellung

Info

Publication number
DE69818720D1
DE69818720D1 DE69818720T DE69818720T DE69818720D1 DE 69818720 D1 DE69818720 D1 DE 69818720D1 DE 69818720 T DE69818720 T DE 69818720T DE 69818720 T DE69818720 T DE 69818720T DE 69818720 D1 DE69818720 D1 DE 69818720D1
Authority
DE
Germany
Prior art keywords
production
field effect
effect transistor
heterojunction field
heterojunction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69818720T
Other languages
English (en)
Other versions
DE69818720T2 (de
Inventor
Tetsuya Suemitsu
Takatomo Enoki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Application granted granted Critical
Publication of DE69818720D1 publication Critical patent/DE69818720D1/de
Publication of DE69818720T2 publication Critical patent/DE69818720T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H01L21/28587—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds characterised by the sectional shape, e.g. T, inverted T
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H01L21/30621—Vapour phase etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/8252—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using III-V technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
    • H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
DE69818720T 1997-01-23 1998-01-15 Heteroübergangsfeldeffekttransistor und Verfahren zu dessen Herstellung Expired - Fee Related DE69818720T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1025697 1997-01-23
JP01025697A JP3377022B2 (ja) 1997-01-23 1997-01-23 ヘテロ接合型電界効果トランジスタの製造方法

Publications (2)

Publication Number Publication Date
DE69818720D1 true DE69818720D1 (de) 2003-11-13
DE69818720T2 DE69818720T2 (de) 2004-08-12

Family

ID=11745249

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69818720T Expired - Fee Related DE69818720T2 (de) 1997-01-23 1998-01-15 Heteroübergangsfeldeffekttransistor und Verfahren zu dessen Herstellung

Country Status (4)

Country Link
US (1) US6090649A (de)
EP (1) EP0855748B1 (de)
JP (1) JP3377022B2 (de)
DE (1) DE69818720T2 (de)

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* Cited by examiner, † Cited by third party
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US6087207A (en) * 1998-09-29 2000-07-11 Raytheon Company Method of making pseudomorphic high electron mobility transistors
JP2001044417A (ja) * 1999-07-26 2001-02-16 Fujitsu Ltd 半導体装置
US6514789B2 (en) 1999-10-26 2003-02-04 Motorola, Inc. Component and method for manufacture
US6458640B1 (en) * 2001-06-04 2002-10-01 Anadigics, Inc. GaAs MESFET having LDD and non-uniform P-well doping profiles
US6838325B2 (en) 2002-10-24 2005-01-04 Raytheon Company Method of forming a self-aligned, selectively etched, double recess high electron mobility transistor
JP4284254B2 (ja) 2004-09-07 2009-06-24 富士通株式会社 電界効果型半導体装置
US8525229B2 (en) 2006-05-08 2013-09-03 Renesas Electronics Corporation Semiconductor device
JP5217301B2 (ja) * 2007-08-28 2013-06-19 富士通株式会社 化合物半導体装置とその製造方法
JP2013131650A (ja) * 2011-12-21 2013-07-04 Fujitsu Ltd 半導体装置及びその製造方法
CN103456780A (zh) * 2012-06-01 2013-12-18 稳懋半导体股份有限公司 伪晶型高电子迁移率晶体管和异质接面双极晶体管磊晶改良结构及其加工方法
US20150372096A1 (en) * 2014-06-20 2015-12-24 Ishiang Shih High Electron Mobility Transistors and Integrated Circuits with Improved Feature Uniformity and Reduced defects for Microwave and Millimetre Wave Applications
US9385001B1 (en) * 2015-03-17 2016-07-05 Toshiba Corporation Self-aligned ITO gate electrode for GaN HEMT device
CN105789310A (zh) * 2015-12-30 2016-07-20 东莞市青麦田数码科技有限公司 一种InGaAs MOSFET器件结构
US11309412B1 (en) * 2017-05-17 2022-04-19 Northrop Grumman Systems Corporation Shifting the pinch-off voltage of an InP high electron mobility transistor with a metal ring
CN113169049B (zh) * 2018-12-10 2022-07-05 株式会社菲尔尼克斯 半导体基板及其制造方法以及半导体元件的制造方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2630446B2 (ja) * 1988-10-12 1997-07-16 富士通株式会社 半導体装置及びその製造方法
US5043777A (en) * 1989-04-03 1991-08-27 Westinghouse Electric Corp. Power FETS with improved high voltage performance
US5352909A (en) * 1991-12-19 1994-10-04 Nec Corporation Field effect transistor and method for manufacturing the same
US5508535A (en) * 1992-01-09 1996-04-16 Mitsubishi Denki Kabushiki Kaisha Compound semiconductor devices
JPH06168962A (ja) * 1992-08-19 1994-06-14 Mitsubishi Electric Corp 電界効果型半導体装置及びその製造方法
JP3128601B2 (ja) * 1992-10-06 2001-01-29 日本電信電話株式会社 高電子移動度トランジスタ
CA2110790A1 (en) * 1992-12-08 1994-06-09 Shigeru Nakajima Compound semiconductor device and method for fabricating the same
JPH06204253A (ja) * 1993-01-07 1994-07-22 Fujitsu Ltd 電界効果半導体装置
JPH06302625A (ja) * 1993-04-15 1994-10-28 Matsushita Electric Ind Co Ltd 電界効果トランジスタおよびその製造方法
JPH06333955A (ja) * 1993-05-27 1994-12-02 Sony Corp 電界効果トランジスタ及びその製造方法
US5480829A (en) * 1993-06-25 1996-01-02 Motorola, Inc. Method of making a III-V complementary heterostructure device with compatible non-gold ohmic contacts
JP2725592B2 (ja) * 1994-03-30 1998-03-11 日本電気株式会社 電界効果トランジスタの製造方法
KR0144821B1 (ko) * 1994-05-16 1998-07-01 양승택 저전원전압으로 작동가능한 갈륨비소 반도체 전력소자의 제조 방법
JP2606581B2 (ja) * 1994-05-18 1997-05-07 日本電気株式会社 電界効果トランジスタ及びその製造方法
US5786244A (en) * 1994-09-30 1998-07-28 National Science Council Method for making GaAs-InGaAs high electron mobility transistor
JP2687897B2 (ja) * 1994-10-13 1997-12-08 日本電気株式会社 電界効果型トランジスタ及びその製造方法
US5739557A (en) * 1995-02-06 1998-04-14 Motorola, Inc. Refractory gate heterostructure field effect transistor
US5663583A (en) * 1995-06-06 1997-09-02 Hughes Aircraft Company Low-noise and power ALGaPSb/GaInAs HEMTs and pseudomorpohic HEMTs on GaAs substrate
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US5869364A (en) * 1996-07-22 1999-02-09 The United States Of America As Represented By The Secretary Of The Air Force Single layer integrated metal process for metal semiconductor field effect transistor (MESFET)
US5811844A (en) * 1997-07-03 1998-09-22 Lucent Technologies Inc. Low noise, high power pseudomorphic HEMT

Also Published As

Publication number Publication date
US6090649A (en) 2000-07-18
DE69818720T2 (de) 2004-08-12
EP0855748B1 (de) 2003-10-08
EP0855748A1 (de) 1998-07-29
JPH10209434A (ja) 1998-08-07
JP3377022B2 (ja) 2003-02-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee