DE69226488D1 - Halbleiterspeicheranordnung und Verfahren zu ihrer Herstellung - Google Patents
Halbleiterspeicheranordnung und Verfahren zu ihrer HerstellungInfo
- Publication number
- DE69226488D1 DE69226488D1 DE69226488T DE69226488T DE69226488D1 DE 69226488 D1 DE69226488 D1 DE 69226488D1 DE 69226488 T DE69226488 T DE 69226488T DE 69226488 T DE69226488 T DE 69226488T DE 69226488 D1 DE69226488 D1 DE 69226488D1
- Authority
- DE
- Germany
- Prior art keywords
- production
- memory device
- semiconductor memory
- semiconductor
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
- H01L29/42328—Gate electrodes for transistors with a floating gate with at least one additional gate other than the floating gate and the control gate, e.g. program gate, erase gate or select gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
- H01L29/42336—Gate electrodes for transistors with a floating gate with one gate at least partly formed in a trench
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP03281911A JP3124334B2 (ja) | 1991-10-03 | 1991-10-03 | 半導体記憶装置およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69226488D1 true DE69226488D1 (de) | 1998-09-10 |
DE69226488T2 DE69226488T2 (de) | 1999-01-28 |
Family
ID=17645675
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69226488T Expired - Fee Related DE69226488T2 (de) | 1991-10-03 | 1992-10-02 | Halbleiterspeicheranordnung und Verfahren zu ihrer Herstellung |
Country Status (4)
Country | Link |
---|---|
US (2) | US5359218A (de) |
EP (1) | EP0535694B1 (de) |
JP (1) | JP3124334B2 (de) |
DE (1) | DE69226488T2 (de) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2585180B2 (ja) * | 1992-09-02 | 1997-02-26 | 三菱電機株式会社 | 半導体記憶装置およびその製造方法 |
US5793081A (en) * | 1994-03-25 | 1998-08-11 | Nippon Steel Corporation | Nonvolatile semiconductor storage device and method of manufacturing |
US5640032A (en) * | 1994-09-09 | 1997-06-17 | Nippon Steel Corporation | Non-volatile semiconductor memory device with improved rewrite speed |
US5675161A (en) * | 1995-03-28 | 1997-10-07 | Thomas; Mammen | Channel accelerated tunneling electron cell, with a select region incorporated, for high density low power applications |
JPH08274198A (ja) * | 1995-03-29 | 1996-10-18 | Lg Semicon Co Ltd | Eepromセル及びその製造方法 |
US5953602A (en) * | 1995-05-26 | 1999-09-14 | Lg Semicon Co., Ltd. | EEPROM cell and related method of making thereof |
EP0752721B1 (de) * | 1995-06-29 | 2009-04-29 | Sharp Kabushiki Kaisha | Nichtflüchtiger Halbleiterspeicher und Verfahren zur Steuerung und Verfahren zu seiner Herstellung |
US5877054A (en) * | 1995-06-29 | 1999-03-02 | Sharp Kabushiki Kaisha | Method of making nonvolatile semiconductor memory |
JP3366173B2 (ja) * | 1995-07-31 | 2003-01-14 | シャープ株式会社 | 不揮発性半導体メモリの製造方法 |
KR100278647B1 (ko) | 1996-10-05 | 2001-02-01 | 윤종용 | 불휘발성 메모리소자 및 그 제조방법 |
US6008089A (en) * | 1997-12-24 | 1999-12-28 | United Semiconductor Corp. | Method of fabricating a split gate flash memory device |
JP3830704B2 (ja) * | 1999-12-10 | 2006-10-11 | Necエレクトロニクス株式会社 | 半導体装置とそれを用いた不揮発性半導体記憶装置及びその製造方法 |
KR100368317B1 (ko) * | 1999-12-28 | 2003-01-24 | 주식회사 하이닉스반도체 | 플래쉬 메모리 소자의 코드저장 셀 |
JP2001210730A (ja) * | 2000-01-25 | 2001-08-03 | Oki Electric Ind Co Ltd | 不揮発性半導体記憶装置の製造方法 |
US6700154B1 (en) * | 2002-09-20 | 2004-03-02 | Lattice Semiconductor Corporation | EEPROM cell with trench coupling capacitor |
KR100604850B1 (ko) * | 2003-05-20 | 2006-07-31 | 삼성전자주식회사 | 균일하지 않은 채널 유전막 두께를 갖는 이이피롬 셀 구조및 그 제조방법 |
KR100825383B1 (ko) * | 2006-04-24 | 2008-04-29 | 삼성에스디아이 주식회사 | 비휘발성 메모리 소자, 이를 제조하는 방법 및 이를포함하는 유기 전계 발광 표시 장치 |
US8320191B2 (en) | 2007-08-30 | 2012-11-27 | Infineon Technologies Ag | Memory cell arrangement, method for controlling a memory cell, memory array and electronic device |
US8847319B2 (en) | 2012-03-09 | 2014-09-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Dummy structure for multiple gate dielectric interface and methods |
US9362272B2 (en) | 2012-11-01 | 2016-06-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lateral MOSFET |
US10269822B2 (en) * | 2015-12-29 | 2019-04-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method to fabricate uniform tunneling dielectric of embedded flash memory cell |
US11257916B2 (en) * | 2019-03-14 | 2022-02-22 | Semiconductor Components Industries, Llc | Electronic device having multi-thickness gate insulator |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5780779A (en) * | 1980-11-07 | 1982-05-20 | Fujitsu Ltd | Semiconductor non-volatile memory |
JPS5791561A (en) * | 1980-11-28 | 1982-06-07 | Fujitsu Ltd | Semiconductor non-volatile memory device and manufacture therefor |
US4417264A (en) * | 1982-03-09 | 1983-11-22 | Rca Corporation | Electrically alterable, nonvolatile floating gate memory device |
US4701776A (en) * | 1983-08-29 | 1987-10-20 | Seeq Technology, Inc. | MOS floating gate memory cell and process for fabricating same |
FR2562707A1 (fr) * | 1984-04-06 | 1985-10-11 | Efcis | Point-memoire electriquement effacable et reprogrammable, comportant une grille flottante au-dessus d'une grille de commande |
US4649520A (en) * | 1984-11-07 | 1987-03-10 | Waferscale Integration Inc. | Single layer polycrystalline floating gate |
US4752912A (en) * | 1985-05-14 | 1988-06-21 | Xicor, Inc. | Nonvolatile electrically alterable memory and method |
JPS62245676A (ja) * | 1986-04-18 | 1987-10-26 | Toshiba Corp | 不揮発性半導体記憶装置 |
US4949140A (en) * | 1987-02-02 | 1990-08-14 | Intel Corporation | EEPROM cell with integral select transistor |
JPS6410673A (en) * | 1987-07-02 | 1989-01-13 | Fujitsu Ltd | Non volatile semiconductor memory device |
JPH01128472A (ja) * | 1987-11-13 | 1989-05-22 | Toshiba Corp | 半導体不揮発性記憶装置 |
JP2755592B2 (ja) * | 1988-02-23 | 1998-05-20 | 株式会社東芝 | 半導体記憶装置およびその製造方法 |
JPH07101713B2 (ja) * | 1988-06-07 | 1995-11-01 | 三菱電機株式会社 | 半導体記憶装置の製造方法 |
JP2547622B2 (ja) * | 1988-08-26 | 1996-10-23 | 三菱電機株式会社 | 不揮発性半導体記憶装置 |
US4989053A (en) * | 1989-03-27 | 1991-01-29 | Shelton Everett K | Nonvolatile process compatible with a digital and analog double level metal MOS process |
US5017979A (en) * | 1989-04-28 | 1991-05-21 | Nippondenso Co., Ltd. | EEPROM semiconductor memory device |
JPH0393276A (ja) * | 1989-09-05 | 1991-04-18 | Toshiba Micro Electron Kk | 半導体記憶装置及びその製造方法 |
US5215934A (en) * | 1989-12-21 | 1993-06-01 | Tzeng Jyh Cherng J | Process for reducing program disturbance in eeprom arrays |
-
1991
- 1991-10-03 JP JP03281911A patent/JP3124334B2/ja not_active Expired - Fee Related
-
1992
- 1992-10-01 US US07/955,278 patent/US5359218A/en not_active Expired - Lifetime
- 1992-10-02 DE DE69226488T patent/DE69226488T2/de not_active Expired - Fee Related
- 1992-10-02 EP EP92116892A patent/EP0535694B1/de not_active Expired - Lifetime
-
1994
- 1994-06-08 US US08/257,008 patent/US5514607A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE69226488T2 (de) | 1999-01-28 |
US5359218A (en) | 1994-10-25 |
JPH05102490A (ja) | 1993-04-23 |
EP0535694A2 (de) | 1993-04-07 |
JP3124334B2 (ja) | 2001-01-15 |
EP0535694B1 (de) | 1998-08-05 |
EP0535694A3 (en) | 1993-08-11 |
US5514607A (en) | 1996-05-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |