DE69014486D1 - Halbleiterspeicheranordnung mit Stapelkondensator und Verfahren zu ihrer Herstellung. - Google Patents

Halbleiterspeicheranordnung mit Stapelkondensator und Verfahren zu ihrer Herstellung.

Info

Publication number
DE69014486D1
DE69014486D1 DE69014486T DE69014486T DE69014486D1 DE 69014486 D1 DE69014486 D1 DE 69014486D1 DE 69014486 T DE69014486 T DE 69014486T DE 69014486 T DE69014486 T DE 69014486T DE 69014486 D1 DE69014486 D1 DE 69014486D1
Authority
DE
Germany
Prior art keywords
production
memory device
semiconductor memory
stacked capacitor
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69014486T
Other languages
English (en)
Other versions
DE69014486T2 (de
Inventor
Hiroshi Gotou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE69014486D1 publication Critical patent/DE69014486D1/de
Publication of DE69014486T2 publication Critical patent/DE69014486T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H10B12/0335—Making a connection between the transistor and the capacitor, e.g. plug
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
    • H10B12/485—Bit line contacts

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE69014486T 1989-07-05 1990-07-05 Halbleiterspeicheranordnung mit Stapelkondensator und Verfahren zu ihrer Herstellung. Expired - Fee Related DE69014486T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1171827A JPH0338061A (ja) 1989-07-05 1989-07-05 半導体記憶装置

Publications (2)

Publication Number Publication Date
DE69014486D1 true DE69014486D1 (de) 1995-01-12
DE69014486T2 DE69014486T2 (de) 1995-04-20

Family

ID=15930479

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69014486T Expired - Fee Related DE69014486T2 (de) 1989-07-05 1990-07-05 Halbleiterspeicheranordnung mit Stapelkondensator und Verfahren zu ihrer Herstellung.

Country Status (5)

Country Link
US (1) US5126810A (de)
EP (1) EP0415530B1 (de)
JP (1) JPH0338061A (de)
KR (1) KR940001020B1 (de)
DE (1) DE69014486T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111697451A (zh) * 2020-06-05 2020-09-22 宁波欧日力电器制造有限公司 一种智能远程控制配电柜及其控制方法

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EP0764974B1 (de) 1990-03-08 2006-06-14 Fujitsu Limited Schichtstruktur mit Kontaktöffnung und Verfahren zur Herstellung derselben
EP0480411A1 (de) * 1990-10-10 1992-04-15 Micron Technology, Inc. DRAM mit gestapeltem Kondensator
KR930009594B1 (ko) * 1991-01-30 1993-10-07 삼성전자 주식회사 고집적 반도체 메모리장치 및 그 제조방법
JP3049100B2 (ja) * 1991-03-04 2000-06-05 富士通株式会社 半導体装置及びその製造方法
DE69230156T2 (de) * 1991-07-25 2000-05-25 Fujitsu Ltd., Kawasaki Herstellungsverfahren für Kondensator mit gestapelter Flossenstruktur und mit reduzierter Flossendicke
TW243541B (de) * 1991-08-31 1995-03-21 Samsung Electronics Co Ltd
GB2297648B (en) * 1991-08-31 1996-10-23 Samsung Electronics Co Ltd Semiconductor device
US5573967A (en) * 1991-12-20 1996-11-12 Industrial Technology Research Institute Method for making dynamic random access memory with fin-type stacked capacitor
US5150276A (en) * 1992-01-24 1992-09-22 Micron Technology, Inc. Method of fabricating a vertical parallel cell capacitor having a storage node capacitor plate comprising a center fin effecting electrical communication between itself and parallel annular rings
JP2838337B2 (ja) * 1992-03-27 1998-12-16 三菱電機株式会社 半導体装置
US5591659A (en) * 1992-04-16 1997-01-07 Fujitsu Limited Process of producing a semiconductor device in which a height difference between a memory cell area and a peripheral area is eliminated
KR0121297B1 (en) * 1992-04-16 1997-11-15 Fujitsu Ltd Semiconductor device and process of producing the same
US5605857A (en) * 1993-02-12 1997-02-25 Micron Technology, Inc. Method of forming a bit line over capacitor array of memory cells and an array of bit line over capacitor array of memory cells
US5563089A (en) * 1994-07-20 1996-10-08 Micron Technology, Inc. Method of forming a bit line over capacitor array of memory cells and an array of bit line over capacitor array of memory cells
US5508218A (en) * 1993-12-28 1996-04-16 Lg Semicon Co., Ltd. Method for fabricating a semiconductor memory
US5660680A (en) * 1994-03-07 1997-08-26 The Regents Of The University Of California Method for fabrication of high vertical aspect ratio thin film structures
US5798042A (en) * 1994-03-07 1998-08-25 Regents Of The University Of California Microfabricated filter with specially constructed channel walls, and containment well and capsule constructed with such filters
US5985164A (en) * 1994-03-07 1999-11-16 Regents Of The University Of California Method for forming a filter
US5645684A (en) * 1994-03-07 1997-07-08 The Regents Of The University Of California Multilayer high vertical aspect ratio thin film structures
US5770076A (en) * 1994-03-07 1998-06-23 The Regents Of The University Of California Micromachined capsules having porous membranes and bulk supports
US5985328A (en) * 1994-03-07 1999-11-16 Regents Of The University Of California Micromachined porous membranes with bulk support
US5651900A (en) * 1994-03-07 1997-07-29 The Regents Of The University Of California Microfabricated particle filter
US6140705A (en) * 1995-01-03 2000-10-31 Texas Instruments Incorporated Self-aligned contact through a conducting layer
KR100388519B1 (ko) * 1995-02-22 2003-09-19 마이크론 테크놀로지, 인크. 메모리셀의커패시터배열위에비트선을형성하는방법및이를이용한집적회로및반도체메모리장치
DE19527023C1 (de) * 1995-07-24 1997-02-27 Siemens Ag Verfahren zur Herstellung eines Kondensators in einer Halbleiteranordnung
DE19526952C2 (de) * 1995-07-24 1997-09-11 Siemens Ag Verfahren zur Herstellung einer DRAM-Zellenanordnung
US5661064A (en) * 1995-11-13 1997-08-26 Micron Technology, Inc. Method of forming a capacitor having container members
US5637523A (en) * 1995-11-20 1997-06-10 Micron Technology, Inc. Method of forming a capacitor and a capacitor construction
DE19546999C1 (de) * 1995-12-15 1997-04-30 Siemens Ag Verfahren zur Herstellung von Kondensatoren in einer Halbleiteranordnung
TW312831B (en) * 1996-08-16 1997-08-11 United Microelectronics Corp Manufacturing method of semiconductor memory device with capacitor(3)
DE19632835C1 (de) * 1996-08-14 1998-04-02 Siemens Ag Verfahren zur Herstellung eines Kondensators in einer Halbeiteranordnung
TW351846B (en) * 1996-08-16 1999-02-01 United Microelectronics Corp Method for fabricating memory cell for DRAM
TW306036B (en) * 1996-08-16 1997-05-21 United Microelectronics Corp Semiconductor memory device with capacitor (part 2)
TW312828B (en) * 1996-08-16 1997-08-11 United Microelectronics Corp Manufacturing method of semiconductor memory device with capacitor(5)
US5744833A (en) * 1996-08-16 1998-04-28 United Microelectronics Corporation Semiconductor memory device having tree-type capacitor
TW427012B (en) * 1996-08-16 2001-03-21 United Microelectronics Corp The manufacturing method of double-combined capacitor DRAM cells
TW366592B (en) * 1996-08-16 1999-08-11 United Microelectronics Corp DRAM memory and the manufacturing method for the memory cells
TW304288B (en) * 1996-08-16 1997-05-01 United Microelectronics Corp Manufacturing method of semiconductor memory device with capacitor
GB2321774A (en) * 1996-08-16 1998-08-05 United Microelectronics Corp Stacked capacitor
TW308727B (en) * 1996-08-16 1997-06-21 United Microelectronics Corp Semiconductor memory device with capacitor (4)
TW302524B (en) * 1996-08-16 1997-04-11 United Microelectronics Corp Memory cell structure of dynamic random access memory and manufacturing method thereof
TW304290B (en) * 1996-08-16 1997-05-01 United Microelectronics Corp The manufacturing method for semiconductor memory device with capacitor
TW308729B (en) * 1996-08-16 1997-06-21 United Microelectronics Corp Semiconductor memory device with capacitor (3)
TW297948B (en) * 1996-08-16 1997-02-11 United Microelectronics Corp Memory cell structure of DRAM
US5739060A (en) * 1996-08-16 1998-04-14 United Microelecrtronics Corporation Method of fabricating a capacitor structure for a semiconductor memory device
US5796138A (en) * 1996-08-16 1998-08-18 United Microelectronics Corporation Semiconductor memory device having a tree type capacitor
US5759890A (en) * 1996-08-16 1998-06-02 United Microelectronics Corporation Method for fabricating a tree-type capacitor structure for a semiconductor memory device
TW306064B (en) * 1996-08-16 1997-05-21 United Microelectronics Corp Semiconductor memory device with capacitor (part 6)
US5811848A (en) * 1996-08-16 1998-09-22 United Microelectronics Corporation Capacitor structure for a semiconductor memory device
TW312829B (en) * 1996-08-16 1997-08-11 United Microelectronics Corp Semiconductor memory device with capacitor(6)
DE19640271C1 (de) * 1996-09-30 1998-03-05 Siemens Ag Verfahren zur Herstellung einer integrierten Halbleiterspeicheranordnung
GB2323470A (en) * 1997-01-30 1998-09-23 United Microelectronics Corp Method of fabricating a stacked capacitor
KR100249157B1 (ko) * 1997-02-12 2000-03-15 김영환 반도체 소자의 제조 방법
DE19707977C1 (de) * 1997-02-27 1998-06-10 Siemens Ag Verfahren zur Herstellung eines Kondensators für eine Halbleiteranordnung
US6121552A (en) 1997-06-13 2000-09-19 The Regents Of The University Of Caliofornia Microfabricated high aspect ratio device with an electrical isolation trench
DE19727466C2 (de) * 1997-06-27 2001-12-20 Infineon Technologies Ag DRAM-Zellenanordnung und Verfahren zu deren Herstellung
US5970358A (en) * 1997-06-30 1999-10-19 Micron Technology, Inc. Method for forming a capacitor wherein the first capacitor plate includes electrically coupled conductive layers separated by an intervening insulative layer
JP3698289B2 (ja) * 1997-10-15 2005-09-21 スズキ株式会社 自動車のステアリング装置
DE19821777C1 (de) 1998-05-14 1999-06-17 Siemens Ag Herstellverfahren für einen Kondensator in einer integrierten Speicherschaltung
DE19821776C1 (de) * 1998-05-14 1999-09-30 Siemens Ag Herstellverfahren für einen Kondensator in einer integrierten Halbleiterschaltung
DE19842684C1 (de) * 1998-09-17 1999-11-04 Siemens Ag Auf einem Stützgerüst angeordneter Kondensator in einer Halbleiteranordnung und Herstellverfahren
US6096620A (en) * 1998-11-13 2000-08-01 United Microelectronics Corp. Method of fabricating dynamic random access memory capacitor
DE19942680A1 (de) 1999-09-07 2001-04-05 Infineon Technologies Ag Integrierte Schaltungsanordnung mit mindestens einem Kondensator und Verfahren zu deren Herstellung
US10510851B2 (en) * 2016-11-29 2019-12-17 Taiwan Semiconductor Manufacturing Company, Ltd. Low resistance contact method and structure

Family Cites Families (12)

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Publication number Priority date Publication date Assignee Title
JPS6074470A (ja) * 1983-09-29 1985-04-26 Fujitsu Ltd 半導体装置
JPH0682783B2 (ja) * 1985-03-29 1994-10-19 三菱電機株式会社 容量およびその製造方法
US4827323A (en) * 1986-01-07 1989-05-02 Texas Instruments Incorporated Stacked capacitor
JPS6358958A (ja) * 1986-08-29 1988-03-14 Mitsubishi Electric Corp 半導体記憶装置
JPS63188966A (ja) * 1987-01-30 1988-08-04 Fujitsu Ltd 半導体装置の製造方法
JPS63208263A (ja) * 1987-02-25 1988-08-29 Toshiba Corp 半導体装置
DE3856143T2 (de) * 1987-06-17 1998-10-29 Fujitsu Ltd Verfahren zum Herstellen einer dynamischen Speicherzelle mit wahlfreiem Zugriff
JP2755591B2 (ja) * 1988-03-25 1998-05-20 株式会社東芝 半導体記憶装置
JPH01270343A (ja) * 1988-04-22 1989-10-27 Fujitsu Ltd 半導体装置の製造方法
JPH0223657A (ja) * 1988-07-12 1990-01-25 Sharp Corp 半導体メモリ素子
JPH0260162A (ja) * 1988-08-25 1990-02-28 Sony Corp 半導体メモリ
JPH02312269A (ja) * 1989-05-26 1990-12-27 Toshiba Corp 半導体記憶装置およびその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111697451A (zh) * 2020-06-05 2020-09-22 宁波欧日力电器制造有限公司 一种智能远程控制配电柜及其控制方法

Also Published As

Publication number Publication date
KR940001020B1 (ko) 1994-02-08
EP0415530B1 (de) 1994-11-30
JPH0338061A (ja) 1991-02-19
KR910003812A (ko) 1991-02-28
US5126810A (en) 1992-06-30
DE69014486T2 (de) 1995-04-20
EP0415530A1 (de) 1991-03-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee