DE69014323D1 - Dünnfilmspeicher und Verfahren zu seiner Herstellung. - Google Patents

Dünnfilmspeicher und Verfahren zu seiner Herstellung.

Info

Publication number
DE69014323D1
DE69014323D1 DE69014323T DE69014323T DE69014323D1 DE 69014323 D1 DE69014323 D1 DE 69014323D1 DE 69014323 T DE69014323 T DE 69014323T DE 69014323 T DE69014323 T DE 69014323T DE 69014323 D1 DE69014323 D1 DE 69014323D1
Authority
DE
Germany
Prior art keywords
production
thin film
film memory
memory
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69014323T
Other languages
English (en)
Other versions
DE69014323T2 (de
Inventor
Nobuyuki Yamamura
Shinichi Shimomaki
Hideaki Shimizu
Hiroshi Matsumoto
Naoki Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Casio Computer Co Ltd
Original Assignee
Casio Computer Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1015165A external-priority patent/JP2759154B2/ja
Priority claimed from JP1078388A external-priority patent/JPH02260461A/ja
Priority claimed from JP1103531A external-priority patent/JPH02283075A/ja
Priority claimed from JP1117579A external-priority patent/JPH02297971A/ja
Priority claimed from JP1184818A external-priority patent/JPH0352197A/ja
Application filed by Casio Computer Co Ltd filed Critical Casio Computer Co Ltd
Application granted granted Critical
Publication of DE69014323D1 publication Critical patent/DE69014323D1/de
Publication of DE69014323T2 publication Critical patent/DE69014323T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Thin Film Transistor (AREA)
  • Non-Volatile Memory (AREA)
DE69014323T 1989-01-26 1990-01-26 Dünnfilmspeicher und Verfahren zu seiner Herstellung. Expired - Fee Related DE69014323T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP1015165A JP2759154B2 (ja) 1989-01-26 1989-01-26 薄膜メモリ素子
JP1078388A JPH02260461A (ja) 1989-03-31 1989-03-31 薄膜メモリ素子
JP1103531A JPH02283075A (ja) 1989-04-25 1989-04-25 薄膜メモリ素子およびその製造方法
JP1117579A JPH02297971A (ja) 1989-05-12 1989-05-12 薄膜トランジスタの製造方法
JP1184818A JPH0352197A (ja) 1989-07-19 1989-07-19 薄膜トランジスタメモリの駆動方法

Publications (2)

Publication Number Publication Date
DE69014323D1 true DE69014323D1 (de) 1995-01-12
DE69014323T2 DE69014323T2 (de) 1995-04-13

Family

ID=27519681

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69014323T Expired - Fee Related DE69014323T2 (de) 1989-01-26 1990-01-26 Dünnfilmspeicher und Verfahren zu seiner Herstellung.

Country Status (3)

Country Link
US (1) US5079606A (de)
EP (1) EP0380122B1 (de)
DE (1) DE69014323T2 (de)

Families Citing this family (34)

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JPH04123471A (ja) * 1990-09-14 1992-04-23 Oki Electric Ind Co Ltd 半導体記憶装置のデータ書込みおよび消去方法
US5449941A (en) * 1991-10-29 1995-09-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
JPH0645603A (ja) * 1992-07-23 1994-02-18 Nec Corp Ｍｏｓ型薄膜トランジスタ
JPH0799251A (ja) * 1992-12-10 1995-04-11 Sony Corp 半導体メモリセル
US5471225A (en) * 1993-04-28 1995-11-28 Dell Usa, L.P. Liquid crystal display with integrated frame buffer
JP3613594B2 (ja) * 1993-08-19 2005-01-26 株式会社ルネサステクノロジ 半導体素子およびこれを用いた半導体記憶装置
US5600153A (en) * 1994-10-07 1997-02-04 Micron Technology, Inc. Conductive polysilicon lines and thin film transistors
US6204521B1 (en) 1998-08-28 2001-03-20 Micron Technology, Inc. Thin film transistors
TW513753B (en) 2000-03-27 2002-12-11 Semiconductor Energy Lab Semiconductor display device and manufacturing method thereof
US6420742B1 (en) 2000-06-16 2002-07-16 Micron Technology, Inc. Ferroelectric memory transistor with high-k gate insulator and method of fabrication
TW504846B (en) * 2000-06-28 2002-10-01 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
KR100726132B1 (ko) * 2000-10-31 2007-06-12 엘지.필립스 엘시디 주식회사 액정표시장치용 어레이기판과 그 제조방법
US7189997B2 (en) 2001-03-27 2007-03-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US6982194B2 (en) * 2001-03-27 2006-01-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US6740938B2 (en) * 2001-04-16 2004-05-25 Semiconductor Energy Laboratory Co., Ltd. Transistor provided with first and second gate electrodes with channel region therebetween
US7190008B2 (en) 2002-04-24 2007-03-13 E Ink Corporation Electro-optic displays, and components for use therein
US7000819B2 (en) * 2003-09-29 2006-02-21 Ethicon Endo-Surgery, Inc. Surgical stapling instrument having multistroke firing incorporating a traction-biased ratcheting mechanism
US20060118869A1 (en) * 2004-12-03 2006-06-08 Je-Hsiung Lan Thin-film transistors and processes for forming the same
KR100652793B1 (ko) * 2005-03-31 2006-12-01 주식회사 하이닉스반도체 반도체 소자 제조 방법
JP5308019B2 (ja) * 2007-12-19 2013-10-09 三菱電機株式会社 薄膜トランジスタ、及びその製造方法、並びに表示装置
JP5264197B2 (ja) 2008-01-23 2013-08-14 キヤノン株式会社 薄膜トランジスタ
JP5305731B2 (ja) * 2008-05-12 2013-10-02 キヤノン株式会社 半導体素子の閾値電圧の制御方法
JP5202094B2 (ja) * 2008-05-12 2013-06-05 キヤノン株式会社 半導体装置
JP5511157B2 (ja) * 2008-07-03 2014-06-04 キヤノン株式会社 発光表示装置
CN102386236B (zh) 2008-10-24 2016-02-10 株式会社半导体能源研究所 半导体器件和用于制造该半导体器件的方法
KR102437444B1 (ko) 2008-11-21 2022-08-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
TWI529942B (zh) 2009-03-27 2016-04-11 半導體能源研究所股份有限公司 半導體裝置
JP5663214B2 (ja) * 2009-07-03 2015-02-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN107195328B (zh) * 2009-10-09 2020-11-10 株式会社半导体能源研究所 移位寄存器和显示装置以及其驱动方法
KR101772639B1 (ko) * 2009-10-16 2017-08-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR20120091243A (ko) 2009-10-30 2012-08-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN104617105B (zh) 2010-02-19 2018-01-26 株式会社半导体能源研究所 半导体装置
JP6285150B2 (ja) 2012-11-16 2018-02-28 株式会社半導体エネルギー研究所 半導体装置
US20150008428A1 (en) * 2013-07-08 2015-01-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device

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DE16251C (de) * W. BREITSCHEID in Remscheid Neuerungen an Taschenmessern
JPS5268382A (en) * 1975-12-05 1977-06-07 Hitachi Ltd Semiconductor circuit unit
FR2365858A1 (fr) * 1976-09-24 1978-04-21 Thomson Csf Memoire non volatile de longue duree pour signaux rapides
US4323910A (en) * 1977-11-28 1982-04-06 Rca Corporation MNOS Memory transistor
JPS5810863B2 (ja) * 1978-04-24 1983-02-28 株式会社日立製作所 半導体装置
US4250569A (en) * 1978-11-15 1981-02-10 Fujitsu Limited Semiconductor memory device
US4353083A (en) * 1978-11-27 1982-10-05 Ncr Corporation Low voltage nonvolatile memory device
DE2906813C2 (de) * 1979-02-22 1982-06-03 Robert Bosch Gmbh, 7000 Stuttgart Elektronische Dünnschichtschaltung
JPS5742161A (en) * 1980-08-28 1982-03-09 Fujitsu Ltd Semiconductor and production thereof
JPS5790977A (en) * 1980-11-27 1982-06-05 Seiko Epson Corp Double-layer gate polysilicon mos transistor
US4481527A (en) * 1981-05-21 1984-11-06 Mcdonnell Douglas Corporation High density MNOS transistor with ion implant into nitride layer adjacent gate electrode
JPS57204168A (en) * 1981-06-10 1982-12-14 Matsushita Electric Ind Co Ltd Semiconductor device
JPS5858773A (ja) * 1981-10-05 1983-04-07 Agency Of Ind Science & Technol 不揮発性半導体メモリ
JPS58115850A (ja) * 1981-12-28 1983-07-09 Seiko Epson Corp アクテイブマトリツクスパネル
DE3275790D1 (en) * 1982-09-15 1987-04-23 Itt Ind Gmbh Deutsche Cmos memory cell with floating memory gate
US4876582A (en) * 1983-05-02 1989-10-24 Ncr Corporation Crystallized silicon-on-insulator nonvolatile memory device
US4668968A (en) * 1984-05-14 1987-05-26 Energy Conversion Devices, Inc. Integrated circuit compatible thin film field effect transistor and method of making same
US4667217A (en) * 1985-04-19 1987-05-19 Ncr Corporation Two bit vertically/horizontally integrated memory cell
US4804637A (en) * 1985-09-27 1989-02-14 Texas Instruments Incorporated EEPROM memory cell and driving circuitry
JPH0691252B2 (ja) * 1986-11-27 1994-11-14 日本電気株式会社 薄膜トランジスタアレイ
JPS6437057A (en) * 1987-07-15 1989-02-07 Ibm Thin film field effect transistor
US4831427A (en) * 1987-07-23 1989-05-16 Texas Instruments Incorporated Ferromagnetic gate memory
GB8721193D0 (en) * 1987-09-09 1987-10-14 Wright S W Semiconductor devices
JPH0714009B2 (ja) * 1987-10-15 1995-02-15 日本電気株式会社 Ｍｏｓ型半導体記憶回路装置

Also Published As

Publication number Publication date
EP0380122B1 (de) 1994-11-30
DE69014323T2 (de) 1995-04-13
EP0380122A1 (de) 1990-08-01
US5079606A (en) 1992-01-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee