JPS57204168A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57204168A
JPS57204168A JP8903881A JP8903881A JPS57204168A JP S57204168 A JPS57204168 A JP S57204168A JP 8903881 A JP8903881 A JP 8903881A JP 8903881 A JP8903881 A JP 8903881A JP S57204168 A JPS57204168 A JP S57204168A
Authority
JP
Japan
Prior art keywords
silicide
insulating substrate
adhesion
oxide film
metallic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8903881A
Other languages
Japanese (ja)
Inventor
Kiyohiro Kawasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP8903881A priority Critical patent/JPS57204168A/en
Publication of JPS57204168A publication Critical patent/JPS57204168A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate

Abstract

PURPOSE:To form a gate oxide film with less defects for the enhancement of quality, by adhering metallic silicide with oxidized surface on a insulating substrate ti provide a metallic wiring with the both ends superposed on the silicide thereon via an amorphous Si layer. CONSTITUTION:The high melting point metallic silicide 15 covered with an Si oxide film 16 over the surface is adhesion formed on an insulating substrate 1. The island amorphous Si layer 2 is selectively formed thereon further to selectively adhesion-form a source electrode 7 and drain electrode 8 for superposing on the silicide 15 to obtain MOS FET. Thus, thin insulating film does not cause pin holes for good adhesion of silicide on the insulating substrate with washability serving to prevent contamination.
JP8903881A 1981-06-10 1981-06-10 Semiconductor device Pending JPS57204168A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8903881A JPS57204168A (en) 1981-06-10 1981-06-10 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8903881A JPS57204168A (en) 1981-06-10 1981-06-10 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS57204168A true JPS57204168A (en) 1982-12-14

Family

ID=13959716

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8903881A Pending JPS57204168A (en) 1981-06-10 1981-06-10 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57204168A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4720736A (en) * 1985-01-24 1988-01-19 Sharp Kabushiki Kaisha Amorphous silicon thin film transistor
US5079606A (en) * 1989-01-26 1992-01-07 Casio Computer Co., Ltd. Thin-film memory element
US5340999A (en) * 1982-02-25 1994-08-23 Sharp Kabushiki Kaisha Insulated gate thin film transistor with amorphous or microcrystalline semiconductor film
WO2000054339A1 (en) * 1999-03-10 2000-09-14 Matsushita Electric Industrial Co., Ltd. Thin-film transistor, panel, and methods for producing them

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5340999A (en) * 1982-02-25 1994-08-23 Sharp Kabushiki Kaisha Insulated gate thin film transistor with amorphous or microcrystalline semiconductor film
US4720736A (en) * 1985-01-24 1988-01-19 Sharp Kabushiki Kaisha Amorphous silicon thin film transistor
US5079606A (en) * 1989-01-26 1992-01-07 Casio Computer Co., Ltd. Thin-film memory element
WO2000054339A1 (en) * 1999-03-10 2000-09-14 Matsushita Electric Industrial Co., Ltd. Thin-film transistor, panel, and methods for producing them
GB2354882A (en) * 1999-03-10 2001-04-04 Matsushita Electric Ind Co Ltd Thin-film transistor,panel and methods for producing them
GB2354882B (en) * 1999-03-10 2004-06-02 Matsushita Electric Ind Co Ltd Thin film transistor panel and their manufacturing method

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