FR2365858A1 - Memoire non volatile de longue duree pour signaux rapides - Google Patents
Memoire non volatile de longue duree pour signaux rapidesInfo
- Publication number
- FR2365858A1 FR2365858A1 FR7628765A FR7628765A FR2365858A1 FR 2365858 A1 FR2365858 A1 FR 2365858A1 FR 7628765 A FR7628765 A FR 7628765A FR 7628765 A FR7628765 A FR 7628765A FR 2365858 A1 FR2365858 A1 FR 2365858A1
- Authority
- FR
- France
- Prior art keywords
- long
- term non
- volatile memory
- fast signals
- stage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000007774 longterm Effects 0.000 title abstract 2
- 238000009825 accumulation Methods 0.000 abstract 1
- 239000003990 capacitor Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/005—Arrangements for selecting an address in a digital store with travelling wave access
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
Abstract
L'invention a pour objet la mémorisation non volatile de longue durée de signaux rapides. Elle est constituee par deux étages de mémoire : a. Un premier étage, comportant notamment une capacité C et une diode D mémorisant le signal d'entrée Vs par accumulation de charges, pendant un temps suffisant pour réaliser le transfert de signal dans le second étage; b. Un second étage, constitué par un élément E du type MIIS, assurant une mémorisation longue et non volatile de ces charges et, par suite, du signal Va
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7628765A FR2365858A1 (fr) | 1976-09-24 | 1976-09-24 | Memoire non volatile de longue duree pour signaux rapides |
US05/835,010 US4110839A (en) | 1976-09-24 | 1977-09-20 | Non-volatile long memory for fast signals |
GB39431/77A GB1590044A (en) | 1976-09-24 | 1977-09-21 | Non-volatile long memory for fast signals |
DE2742936A DE2742936C3 (de) | 1976-09-24 | 1977-09-23 | Nichtflüchtiger Langzeitspeicher |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7628765A FR2365858A1 (fr) | 1976-09-24 | 1976-09-24 | Memoire non volatile de longue duree pour signaux rapides |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2365858A1 true FR2365858A1 (fr) | 1978-04-21 |
FR2365858B1 FR2365858B1 (fr) | 1981-11-06 |
Family
ID=9178047
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7628765A Granted FR2365858A1 (fr) | 1976-09-24 | 1976-09-24 | Memoire non volatile de longue duree pour signaux rapides |
Country Status (4)
Country | Link |
---|---|
US (1) | US4110839A (fr) |
DE (1) | DE2742936C3 (fr) |
FR (1) | FR2365858A1 (fr) |
GB (1) | GB1590044A (fr) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4246502A (en) * | 1978-08-16 | 1981-01-20 | Mitel Corporation | Means for coupling incompatible signals to an integrated circuit and for deriving operating supply therefrom |
US4363110A (en) * | 1980-12-22 | 1982-12-07 | International Business Machines Corp. | Non-volatile dynamic RAM cell |
JP2795408B2 (ja) * | 1987-03-24 | 1998-09-10 | ソニー 株式会社 | メモリ装置 |
JPH01146354A (ja) * | 1987-12-02 | 1989-06-08 | Mitsubishi Electric Corp | 半導体記憶装置 |
US5079606A (en) * | 1989-01-26 | 1992-01-07 | Casio Computer Co., Ltd. | Thin-film memory element |
JPH0660635A (ja) * | 1992-08-06 | 1994-03-04 | Olympus Optical Co Ltd | 強誘電体メモリ装置 |
US6987689B2 (en) * | 2003-08-20 | 2006-01-17 | International Business Machines Corporation | Non-volatile multi-stable memory device and methods of making and using the same |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3697962A (en) * | 1970-11-27 | 1972-10-10 | Ibm | Two device monolithic bipolar memory array |
-
1976
- 1976-09-24 FR FR7628765A patent/FR2365858A1/fr active Granted
-
1977
- 1977-09-20 US US05/835,010 patent/US4110839A/en not_active Expired - Lifetime
- 1977-09-21 GB GB39431/77A patent/GB1590044A/en not_active Expired
- 1977-09-23 DE DE2742936A patent/DE2742936C3/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE2742936A1 (de) | 1978-03-30 |
FR2365858B1 (fr) | 1981-11-06 |
GB1590044A (en) | 1981-05-28 |
US4110839A (en) | 1978-08-29 |
DE2742936B2 (de) | 1980-02-07 |
DE2742936C3 (de) | 1980-10-30 |
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