DE3881986D1 - Nichtfluechtige halbleiterspeicheranordnung und verfahren zu ihrer herstellung. - Google Patents
Nichtfluechtige halbleiterspeicheranordnung und verfahren zu ihrer herstellung.Info
- Publication number
- DE3881986D1 DE3881986D1 DE8888113799T DE3881986T DE3881986D1 DE 3881986 D1 DE3881986 D1 DE 3881986D1 DE 8888113799 T DE8888113799 T DE 8888113799T DE 3881986 T DE3881986 T DE 3881986T DE 3881986 D1 DE3881986 D1 DE 3881986D1
- Authority
- DE
- Germany
- Prior art keywords
- production
- semiconductor storage
- volatile semiconductor
- storage arrangement
- volatile
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
- H01L29/7885—Hot carrier injection from the channel
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62210774A JP2735193B2 (ja) | 1987-08-25 | 1987-08-25 | 不揮発性半導体装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3881986D1 true DE3881986D1 (de) | 1993-07-29 |
DE3881986T2 DE3881986T2 (de) | 1993-09-30 |
Family
ID=16594920
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE88113799T Expired - Fee Related DE3881986T2 (de) | 1987-08-25 | 1988-08-24 | Nichtflüchtige Halbleiterspeicheranordnung und Verfahren zu ihrer Herstellung. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4929988A (de) |
EP (1) | EP0304896B1 (de) |
JP (1) | JP2735193B2 (de) |
KR (1) | KR920002091B1 (de) |
DE (1) | DE3881986T2 (de) |
Families Citing this family (70)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6081449A (en) * | 1987-05-12 | 2000-06-27 | Altera Corporation | High-density nonvolatile memory cell |
JP2646563B2 (ja) * | 1987-07-15 | 1997-08-27 | ソニー株式会社 | 不揮発性メモリ装置 |
JP2646591B2 (ja) * | 1987-11-27 | 1997-08-27 | ソニー株式会社 | 不揮発性メモリ装置 |
JP2675572B2 (ja) * | 1988-03-31 | 1997-11-12 | 株式会社東芝 | 半導体集積回路の製造方法 |
NL8900989A (nl) * | 1989-04-20 | 1990-11-16 | Philips Nv | Halfgeleiderinrichting met een in een kunststof omhulling ingebed halfgeleiderlichaam. |
JPH02285638A (ja) * | 1989-04-27 | 1990-11-22 | Toshiba Corp | 半導体装置 |
JPH07105453B2 (ja) * | 1989-07-13 | 1995-11-13 | 株式会社東芝 | 半導体記憶装置のセル構造 |
US5036378A (en) * | 1989-11-01 | 1991-07-30 | At&T Bell Laboratories | Memory device |
US4964080A (en) * | 1990-03-09 | 1990-10-16 | Intel Corporation | Three-dimensional memory cell with integral select transistor |
US5053842A (en) * | 1990-05-30 | 1991-10-01 | Seiko Instruments Inc. | Semiconductor nonvolatile memory |
US5078498A (en) * | 1990-06-29 | 1992-01-07 | Texas Instruments Incorporated | Two-transistor programmable memory cell with a vertical floating gate transistor |
US5041884A (en) * | 1990-10-11 | 1991-08-20 | Mitsubishi Denki Kabushiki Kaisha | Multilayer semiconductor integrated circuit |
US5258634A (en) * | 1991-05-17 | 1993-11-02 | United Microelectronics Corporation | Electrically erasable read only memory cell array having elongated control gate in a trench |
JPH0567791A (ja) * | 1991-06-20 | 1993-03-19 | Mitsubishi Electric Corp | 電気的に書込および消去可能な半導体記憶装置およびその製造方法 |
JPH0613627A (ja) * | 1991-10-08 | 1994-01-21 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
US5467305A (en) * | 1992-03-12 | 1995-11-14 | International Business Machines Corporation | Three-dimensional direct-write EEPROM arrays and fabrication methods |
US5196722A (en) * | 1992-03-12 | 1993-03-23 | International Business Machines Corporation | Shadow ram cell having a shallow trench eeprom |
US5399516A (en) * | 1992-03-12 | 1995-03-21 | International Business Machines Corporation | Method of making shadow RAM cell having a shallow trench EEPROM |
US5315142A (en) * | 1992-03-23 | 1994-05-24 | International Business Machines Corporation | High performance trench EEPROM cell |
JP2889061B2 (ja) * | 1992-09-25 | 1999-05-10 | ローム株式会社 | 半導体記憶装置およびその製法 |
US5859455A (en) * | 1992-12-31 | 1999-01-12 | Yu; Shih-Chiang | Non-volatile semiconductor memory cell with control gate and floating gate and select gate located above the channel |
US5460988A (en) * | 1994-04-25 | 1995-10-24 | United Microelectronics Corporation | Process for high density flash EPROM cell |
US5670803A (en) | 1995-02-08 | 1997-09-23 | International Business Machines Corporation | Three-dimensional SRAM trench structure and fabrication method therefor |
US6965142B2 (en) * | 1995-03-07 | 2005-11-15 | Impinj, Inc. | Floating-gate semiconductor structures |
US5672524A (en) * | 1995-08-01 | 1997-09-30 | Advanced Micro Devices, Inc. | Three-dimensional complementary field effect transistor process |
US5945705A (en) * | 1995-08-01 | 1999-08-31 | Advanced Micro Devices, Inc. | Three-dimensional non-volatile memory |
JP3403877B2 (ja) * | 1995-10-25 | 2003-05-06 | 三菱電機株式会社 | 半導体記憶装置とその製造方法 |
US5998263A (en) * | 1996-05-16 | 1999-12-07 | Altera Corporation | High-density nonvolatile memory cell |
US5874760A (en) * | 1997-01-22 | 1999-02-23 | International Business Machines Corporation | 4F-square memory cell having vertical floating-gate transistors with self-aligned shallow trench isolation |
US5990509A (en) * | 1997-01-22 | 1999-11-23 | International Business Machines Corporation | 2F-square memory cell for gigabit memory applications |
US6034389A (en) * | 1997-01-22 | 2000-03-07 | International Business Machines Corporation | Self-aligned diffused source vertical transistors with deep trench capacitors in a 4F-square memory cell array |
US5929477A (en) * | 1997-01-22 | 1999-07-27 | International Business Machines Corporation | Self-aligned diffused source vertical transistors with stack capacitors in a 4F-square memory cell array |
US6072209A (en) | 1997-07-08 | 2000-06-06 | Micro Technology, Inc. | Four F2 folded bit line DRAM cell structure having buried bit and word lines |
US5909618A (en) | 1997-07-08 | 1999-06-01 | Micron Technology, Inc. | Method of making memory cell with vertical transistor and buried word and body lines |
US5973356A (en) * | 1997-07-08 | 1999-10-26 | Micron Technology, Inc. | Ultra high density flash memory |
US6150687A (en) | 1997-07-08 | 2000-11-21 | Micron Technology, Inc. | Memory cell having a vertical transistor with buried source/drain and dual gates |
US6717179B1 (en) | 1997-08-19 | 2004-04-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and semiconductor display device |
US6667494B1 (en) | 1997-08-19 | 2003-12-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and semiconductor display device |
JPH11143379A (ja) * | 1997-09-03 | 1999-05-28 | Semiconductor Energy Lab Co Ltd | 半導体表示装置補正システムおよび半導体表示装置の補正方法 |
US5907170A (en) | 1997-10-06 | 1999-05-25 | Micron Technology, Inc. | Circuit and method for an open bit line memory cell with a vertical transistor and trench plate trench capacitor |
US6066869A (en) * | 1997-10-06 | 2000-05-23 | Micron Technology, Inc. | Circuit and method for a folded bit line memory cell with vertical transistor and trench capacitor |
US6528837B2 (en) * | 1997-10-06 | 2003-03-04 | Micron Technology, Inc. | Circuit and method for an open bit line memory cell with a vertical transistor and trench plate trench capacitor |
US6025225A (en) * | 1998-01-22 | 2000-02-15 | Micron Technology, Inc. | Circuits with a trench capacitor having micro-roughened semiconductor surfaces and methods for forming the same |
US5923063A (en) * | 1998-02-19 | 1999-07-13 | Advanced Micro Devices, Inc. | Double density V nonvolatile memory cell |
US6246083B1 (en) | 1998-02-24 | 2001-06-12 | Micron Technology, Inc. | Vertical gain cell and array for a dynamic random access memory |
US5991225A (en) * | 1998-02-27 | 1999-11-23 | Micron Technology, Inc. | Programmable memory address decode array with vertical transistors |
US6124729A (en) | 1998-02-27 | 2000-09-26 | Micron Technology, Inc. | Field programmable logic arrays with vertical transistors |
US6043527A (en) | 1998-04-14 | 2000-03-28 | Micron Technology, Inc. | Circuits and methods for a memory cell with a trench plate trench capacitor and a vertical bipolar read device |
US6134175A (en) | 1998-08-04 | 2000-10-17 | Micron Technology, Inc. | Memory address decode array with vertical transistors |
US6208164B1 (en) | 1998-08-04 | 2001-03-27 | Micron Technology, Inc. | Programmable logic array with vertical transistors |
US6190968B1 (en) * | 1998-11-04 | 2001-02-20 | National Semiconductor Corporation | Method for forming EPROM and flash memory cells with source-side injection |
US6130453A (en) * | 1999-01-04 | 2000-10-10 | International Business Machines Corporation | Flash memory structure with floating gate in vertical trench |
US6368919B2 (en) * | 1999-01-19 | 2002-04-09 | Micron Technology, Inc. | Method and composite for decreasing charge leakage |
TW518637B (en) | 1999-04-15 | 2003-01-21 | Semiconductor Energy Lab | Electro-optical device and electronic equipment |
US6664909B1 (en) | 2001-08-13 | 2003-12-16 | Impinj, Inc. | Method and apparatus for trimming high-resolution digital-to-analog converter |
US6724028B2 (en) | 2001-12-10 | 2004-04-20 | Hans Gude Gudesen | Matrix-addressable array of integrated transistor/memory structures |
JP2003309192A (ja) * | 2002-04-17 | 2003-10-31 | Fujitsu Ltd | 不揮発性半導体メモリおよびその製造方法 |
US6770934B1 (en) * | 2003-04-03 | 2004-08-03 | Powerchip Semiconductor Corp. | Flash memory device structure and manufacturing method thereof |
DE10326523A1 (de) * | 2003-06-12 | 2005-01-13 | Infineon Technologies Ag | Feldeffekttransistor, insbesondere doppelt diffundierter Feldeffekttransistor, sowie Herstellungsverfahren |
US7241654B2 (en) * | 2003-12-17 | 2007-07-10 | Micron Technology, Inc. | Vertical NROM NAND flash memory array |
US7148538B2 (en) | 2003-12-17 | 2006-12-12 | Micron Technology, Inc. | Vertical NAND flash memory array |
KR100526891B1 (ko) * | 2004-02-25 | 2005-11-09 | 삼성전자주식회사 | 반도체 소자에서의 버티컬 트랜지스터 구조 및 그에 따른형성방법 |
KR100587396B1 (ko) * | 2004-08-13 | 2006-06-08 | 동부일렉트로닉스 주식회사 | 비휘발성 메모리 소자 및 그의 제조방법 |
KR100607785B1 (ko) * | 2004-12-31 | 2006-08-02 | 동부일렉트로닉스 주식회사 | 스플릿 게이트 플래시 이이피롬의 제조방법 |
US7166888B2 (en) * | 2005-01-27 | 2007-01-23 | Micron Technology, Inc. | Scalable high density non-volatile memory cells in a contactless memory array |
TWI274402B (en) * | 2005-06-17 | 2007-02-21 | Powerchip Semiconductor Corp | Non-volatile memory and fabricating method thereof |
CN100452355C (zh) * | 2005-08-19 | 2009-01-14 | 力晶半导体股份有限公司 | 非挥发性存储器及其制造方法 |
CN100385646C (zh) * | 2005-08-19 | 2008-04-30 | 力晶半导体股份有限公司 | 防止击穿的半导体元件及其制造方法 |
US7651916B2 (en) * | 2007-01-24 | 2010-01-26 | Freescale Semiconductor, Inc | Electronic device including trenches and discontinuous storage elements and processes of forming and using the same |
CN111508843B (zh) * | 2019-01-31 | 2023-07-14 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件及其形成方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2706155A1 (de) * | 1977-02-14 | 1978-08-17 | Siemens Ag | In integrierter technik hergestellter elektronischer speicher |
EP0048175B1 (de) * | 1980-09-17 | 1986-04-23 | Hitachi, Ltd. | Halbleiterbauelement und Verfahren zu dessen Herstellung |
US4786953A (en) * | 1984-07-16 | 1988-11-22 | Nippon Telegraph & Telephone | Vertical MOSFET and method of manufacturing the same |
JPS61256673A (ja) * | 1985-05-08 | 1986-11-14 | Fujitsu Ltd | 半導体装置 |
JPS6240774A (ja) * | 1985-08-16 | 1987-02-21 | Nippon Denso Co Ltd | 不揮発性半導体記憶装置 |
JPS6225459A (ja) * | 1985-07-25 | 1987-02-03 | Nippon Denso Co Ltd | 不揮発性半導体記憶装置 |
US4698900A (en) * | 1986-03-27 | 1987-10-13 | Texas Instruments Incorporated | Method of making a non-volatile memory having dielectric filled trenches |
-
1987
- 1987-08-25 JP JP62210774A patent/JP2735193B2/ja not_active Expired - Fee Related
-
1988
- 1988-08-23 US US07/235,121 patent/US4929988A/en not_active Expired - Fee Related
- 1988-08-24 EP EP88113799A patent/EP0304896B1/de not_active Expired - Lifetime
- 1988-08-24 DE DE88113799T patent/DE3881986T2/de not_active Expired - Fee Related
- 1988-08-25 KR KR1019880010816A patent/KR920002091B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JP2735193B2 (ja) | 1998-04-02 |
DE3881986T2 (de) | 1993-09-30 |
KR920002091B1 (ko) | 1992-03-10 |
US4929988A (en) | 1990-05-29 |
EP0304896A2 (de) | 1989-03-01 |
JPS6453577A (en) | 1989-03-01 |
KR890004434A (ko) | 1989-04-22 |
EP0304896B1 (de) | 1993-06-23 |
EP0304896A3 (en) | 1990-06-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE3881986D1 (de) | Nichtfluechtige halbleiterspeicheranordnung und verfahren zu ihrer herstellung. | |
DE3778331D1 (de) | Halbleiterspeicheranordnung und verfahren zu ihrer herstellung. | |
DE3782328D1 (de) | Chipkarte mit externer programmiermoeglichkeit und verfahren zu ihrer herstellung. | |
DE3483709D1 (de) | Halbleiterspeicher und verfahren zu seiner herstellung. | |
DE58902995D1 (de) | Nichtfluechtige speicherzelle und verfahren zur herstellung. | |
DE3854455D1 (de) | Halbleiteranordnung und Verfahren zu ihrer Herstellung. | |
DE68924849D1 (de) | Nichtflüchtiger halbleiterspeicher und verfahren zur herstellung. | |
DE68922254D1 (de) | Halbleiterspeicher und Verfahren zu deren Herstellung. | |
DE3885010D1 (de) | Nichtflüchtige Speicherzelle und Verfahren zu ihrer Herstellung. | |
DE3482823D1 (de) | Dihydropyridin-derivate und verfahren zu ihrer herstellung. | |
DE3782994D1 (de) | Erythromycin-a-derivate und verfahren zu ihrer herstellung. | |
DE69013094D1 (de) | Nichtflüchtige Halbleiterspeicheranordnung und Verfahren zu ihrer Herstellung. | |
DE68916297D1 (de) | Nichtflüchtige Halbleiterspeicheranordnung und Verfahren zu ihrer Herstellung. | |
DE3878475D1 (de) | Organopolysiloxanemulsion und verfahren zu ihrer herstellung. | |
DE3880860D1 (de) | Halbleiterspeicheranordnung und verfahren zu ihrer herstellung. | |
DE3580240D1 (de) | Ein-element-transistor/kondensator-halbleiterspeicheranordnung und verfahren zu ihrer herstellung. | |
DE3870961D1 (de) | Thermotrope fluessigkristalline polyester, und verfahren zu ihrer herstellung. | |
DE3482258D1 (de) | 2,2-difluorpropionsaeurederivate und verfahren zu ihrer herstellung. | |
DE3887567D1 (de) | Halbleiterlaservorrichtung und Verfahren zu ihrer Herstellung. | |
DE3582466D1 (de) | Aminoalkohol-derivate und verfahren zu ihrer herstellung. | |
DE3879719D1 (de) | Halbleiterspeicheranordnung und verfahren zu ihrer herstellung. | |
DE3879335D1 (de) | Trifluorbenzolverbindungen und verfahren zu ihrer herstellung. | |
DE3786452D1 (de) | Benzylether-verbindungen und verfahren zu ihrer herstellung. | |
DE3584197D1 (de) | Halbleitervorrichtung und verfahren zu ihrer herstellung. | |
DE3765181D1 (de) | Isocarbacycline und verfahren zu ihrer herstellung. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |