DE3885010D1 - Nichtflüchtige Speicherzelle und Verfahren zu ihrer Herstellung. - Google Patents
Nichtflüchtige Speicherzelle und Verfahren zu ihrer Herstellung.Info
- Publication number
- DE3885010D1 DE3885010D1 DE88401407T DE3885010T DE3885010D1 DE 3885010 D1 DE3885010 D1 DE 3885010D1 DE 88401407 T DE88401407 T DE 88401407T DE 3885010 T DE3885010 T DE 3885010T DE 3885010 D1 DE3885010 D1 DE 3885010D1
- Authority
- DE
- Germany
- Prior art keywords
- production
- memory cell
- volatile memory
- volatile
- cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28123—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects
- H01L21/2815—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects part or whole of the electrode is a sidewall spacer or made by a similar technique, e.g. transformation under mask, plating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8708214A FR2616576B1 (fr) | 1987-06-12 | 1987-06-12 | Cellule de memoire eprom et son procede de fabrication |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3885010D1 true DE3885010D1 (de) | 1993-11-25 |
DE3885010T2 DE3885010T2 (de) | 1994-05-05 |
Family
ID=9351978
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE88401407T Expired - Lifetime DE3885010T2 (de) | 1987-06-12 | 1988-06-09 | Nichtflüchtige Speicherzelle und Verfahren zu ihrer Herstellung. |
Country Status (5)
Country | Link |
---|---|
US (1) | US5138573A (de) |
EP (1) | EP0296030B1 (de) |
JP (1) | JP2671217B2 (de) |
DE (1) | DE3885010T2 (de) |
FR (1) | FR2616576B1 (de) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4969021A (en) * | 1989-06-12 | 1990-11-06 | California Institute Of Technology | Porous floating gate vertical mosfet device with programmable analog memory |
US5268320A (en) * | 1990-12-26 | 1993-12-07 | Intel Corporation | Method of increasing the accuracy of an analog circuit employing floating gate memory devices |
JP2635831B2 (ja) * | 1991-01-28 | 1997-07-30 | 株式会社東芝 | 半導体装置 |
US5461249A (en) * | 1991-10-31 | 1995-10-24 | Rohm Co., Ltd. | Nonvolatile semiconductor memory device and manufacturing method therefor |
US5640031A (en) * | 1993-09-30 | 1997-06-17 | Keshtbod; Parviz | Spacer flash cell process |
US5459091A (en) * | 1993-10-12 | 1995-10-17 | Goldstar Electron Co., Ltd. | Method for fabricating a non-volatile memory device |
KR0142603B1 (ko) * | 1995-03-14 | 1998-07-01 | 김주용 | 플래쉬 이이피롬 셀 및 그 제조방법 |
US5753525A (en) * | 1995-12-19 | 1998-05-19 | International Business Machines Corporation | Method of making EEPROM cell with improved coupling ratio |
JP3735426B2 (ja) * | 1996-12-11 | 2006-01-18 | 株式会社東芝 | 不揮発性半導体記憶装置及びその製造方法 |
JP2980171B2 (ja) * | 1997-06-04 | 1999-11-22 | 日本電気株式会社 | スプリットゲート型フラッシュメモリセルの製造方法 |
US6194768B1 (en) * | 1998-10-23 | 2001-02-27 | Advanced Micro Devices, Inc. | High dielectric constant gate dielectric with an overlying tantalum gate conductor formed on a sidewall surface of a sacrificial structure |
US6350651B1 (en) * | 1999-06-10 | 2002-02-26 | Intel Corporation | Method for making flash memory with UV opaque passivation layer |
US6294429B1 (en) | 1999-11-24 | 2001-09-25 | International Business Machines Corporation | Method of forming a point on a floating gate for electron injection |
TW441038B (en) * | 2000-01-10 | 2001-06-16 | United Microelectronics Corp | Manufacturing method of ETOX flash memory |
US6838726B1 (en) * | 2000-05-31 | 2005-01-04 | Micron Technology, Inc. | Horizontal memory devices with vertical gates |
KR100389918B1 (ko) | 2000-11-14 | 2003-07-04 | 삼성전자주식회사 | 빠른 프로그램 속도를 갖는 고집적 불활성 메모리 셀 어레이 |
KR100414735B1 (ko) * | 2001-12-10 | 2004-01-13 | 주식회사 하이닉스반도체 | 반도체소자 및 그 형성 방법 |
KR100559994B1 (ko) | 2003-08-08 | 2006-03-13 | 동부아남반도체 주식회사 | 측벽 방식을 이용한 플래시 메모리의 플로팅 게이트 형성방법 |
KR100635199B1 (ko) * | 2005-05-12 | 2006-10-16 | 주식회사 하이닉스반도체 | 플래쉬 메모리 소자 및 그의 제조방법 |
JP5063097B2 (ja) * | 2005-12-26 | 2012-10-31 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
US7968932B2 (en) | 2005-12-26 | 2011-06-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
CN102201343A (zh) * | 2011-04-26 | 2011-09-28 | 复旦大学 | 纳米mos器件制备方法及纳米mos器件 |
CN102184961B (zh) * | 2011-04-26 | 2017-04-12 | 复旦大学 | 一种非对称栅mos器件及其制备方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3175125D1 (en) * | 1980-11-20 | 1986-09-18 | Toshiba Kk | Semiconductor memory device and method for manufacturing the same |
GB2100507A (en) * | 1981-06-17 | 1982-12-22 | Philips Electronic Associated | Method of making a vertical igfet |
US4419809A (en) * | 1981-12-30 | 1983-12-13 | International Business Machines Corporation | Fabrication process of sub-micrometer channel length MOSFETs |
JPS61105862A (ja) * | 1984-10-30 | 1986-05-23 | Toshiba Corp | 半導体装置 |
US4754320A (en) * | 1985-02-25 | 1988-06-28 | Kabushiki Kaisha Toshiba | EEPROM with sidewall control gate |
JPS62163376A (ja) * | 1986-01-14 | 1987-07-20 | Fujitsu Ltd | 半導体記憶装置の製造方法 |
-
1987
- 1987-06-12 FR FR8708214A patent/FR2616576B1/fr not_active Expired - Lifetime
-
1988
- 1988-06-06 JP JP63137591A patent/JP2671217B2/ja not_active Expired - Lifetime
- 1988-06-07 US US07/203,266 patent/US5138573A/en not_active Expired - Lifetime
- 1988-06-09 EP EP88401407A patent/EP0296030B1/de not_active Expired - Lifetime
- 1988-06-09 DE DE88401407T patent/DE3885010T2/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0296030A1 (de) | 1988-12-21 |
EP0296030B1 (de) | 1993-10-20 |
JP2671217B2 (ja) | 1997-10-29 |
FR2616576A1 (fr) | 1988-12-16 |
JPS63318164A (ja) | 1988-12-27 |
DE3885010T2 (de) | 1994-05-05 |
US5138573A (en) | 1992-08-11 |
FR2616576B1 (fr) | 1992-09-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |