DE69313024D1 - Festkörperbildaufnahmeanordnung und Verfahren zu ihrer Herstellung - Google Patents

Festkörperbildaufnahmeanordnung und Verfahren zu ihrer Herstellung

Info

Publication number
DE69313024D1
DE69313024D1 DE69313024T DE69313024T DE69313024D1 DE 69313024 D1 DE69313024 D1 DE 69313024D1 DE 69313024 T DE69313024 T DE 69313024T DE 69313024 T DE69313024 T DE 69313024T DE 69313024 D1 DE69313024 D1 DE 69313024D1
Authority
DE
Germany
Prior art keywords
production
imaging device
solid state
state imaging
solid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69313024T
Other languages
English (en)
Other versions
DE69313024T2 (de
Inventor
Shouichi Ishibe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of DE69313024D1 publication Critical patent/DE69313024D1/de
Publication of DE69313024T2 publication Critical patent/DE69313024T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
DE69313024T 1992-05-27 1993-05-27 Festkörperbildaufnahmeanordnung und Verfahren zu ihrer Herstellung Expired - Lifetime DE69313024T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4135379A JPH05335531A (ja) 1992-05-27 1992-05-27 固体撮像装置

Publications (2)

Publication Number Publication Date
DE69313024D1 true DE69313024D1 (de) 1997-09-18
DE69313024T2 DE69313024T2 (de) 1998-02-26

Family

ID=15150337

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69313024T Expired - Lifetime DE69313024T2 (de) 1992-05-27 1993-05-27 Festkörperbildaufnahmeanordnung und Verfahren zu ihrer Herstellung

Country Status (5)

Country Link
US (2) US5422285A (de)
EP (1) EP0573219B1 (de)
JP (1) JPH05335531A (de)
KR (1) KR970006732B1 (de)
DE (1) DE69313024T2 (de)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2925444B2 (ja) * 1993-10-05 1999-07-28 シャープ株式会社 固体撮像素子およびその製造方法
KR0136933B1 (ko) * 1994-05-21 1998-04-24 문정환 씨씨디(ccd) 영상소자 및 제조방법
US5739548A (en) * 1995-05-02 1998-04-14 Matsushita Electronics Corporation Solid state imaging device having a flattening layer and optical lenses
JP3405620B2 (ja) * 1995-05-22 2003-05-12 松下電器産業株式会社 固体撮像装置
KR0148734B1 (ko) * 1995-06-22 1998-08-01 문정환 시시디 촬상소자 제조방법
US5693967A (en) * 1995-08-10 1997-12-02 Lg Semicon Co., Ltd. Charge coupled device with microlens
KR0186195B1 (ko) * 1995-12-11 1999-05-01 문정환 컬러선형 전하결합소자 및 이의 구동방법
KR100223853B1 (ko) * 1996-08-26 1999-10-15 구본준 고체촬상소자의 구조 및 제조방법
JPH10125887A (ja) * 1996-10-21 1998-05-15 Toshiba Corp 固体撮像素子
DE19651667C2 (de) * 1996-12-12 2003-07-03 Rudolf Groskopf Vorrichtung zur dreidimensionalen Untersuchung eines Objektes
JPH10270672A (ja) * 1997-03-25 1998-10-09 Sony Corp 固体撮像素子
DE19816309B4 (de) * 1997-04-14 2008-04-03 CiS Institut für Mikrosensorik gGmbH Verfahren zur Direktmontage von Silizium-Sensoren und danach hergestellte Sensoren
JPH1164608A (ja) * 1997-08-26 1999-03-05 Dainippon Printing Co Ltd レンチキュラーレンズ
JP3120778B2 (ja) * 1998-04-20 2000-12-25 日本電気株式会社 固体撮像装置およびその検査方法および製造方法
KR100553672B1 (ko) * 1998-09-21 2006-09-20 삼성전자주식회사 고체 컬러 이미지 소자의 제조 방법
JP2001147515A (ja) * 1999-09-07 2001-05-29 Ricoh Co Ltd フォトマスク設計方法、フォトマスク設計装置、コンピュータ読取可能な記憶媒体、フォトマスク、フォトレジスト、感光性樹脂、基板、マイクロレンズ及び光学素子
JP4123667B2 (ja) * 2000-01-26 2008-07-23 凸版印刷株式会社 固体撮像素子の製造方法
US6417022B1 (en) * 2000-04-12 2002-07-09 Taiwan Semiconductor Manufacturing Co., Ltd. Method for making long focal length micro-lens for color filters
KR100477784B1 (ko) * 2000-08-31 2005-03-22 매그나칩 반도체 유한회사 트렌치 내부의 공기로 이루어지는 집광층을 구비하는이미지 센서 및 그 제조 방법
JP2003197897A (ja) * 2001-12-28 2003-07-11 Fuji Film Microdevices Co Ltd 半導体光電変換装置
US6969899B2 (en) * 2003-12-08 2005-11-29 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor with light guides
JP4830306B2 (ja) 2004-06-23 2011-12-07 凸版印刷株式会社 固体撮像素子の製造方法
US7763918B1 (en) * 2004-12-02 2010-07-27 Chen Feng Image pixel design to enhance the uniformity of intensity distribution on digital image sensors
US7450161B1 (en) 2004-12-02 2008-11-11 Magnachip Semiconductor Ltd. System and method to enhance the uniformity of intensity distribution on digital imaging sensors
US7564629B1 (en) 2004-12-02 2009-07-21 Crosstek Capital, LLC Microlens alignment procedures in CMOS image sensor design
KR20060077536A (ko) * 2004-12-30 2006-07-05 동부일렉트로닉스 주식회사 씨모스 이미지 센서 및 그의 제조방법
KR100693927B1 (ko) * 2005-02-03 2007-03-12 삼성전자주식회사 마이크로 렌즈 제조방법, 마이크로 렌즈 어레이 제조방법및 이미지 센서 제조방법
US7829965B2 (en) 2005-05-18 2010-11-09 International Business Machines Corporation Touching microlens structure for a pixel sensor and method of fabrication
JP2014056014A (ja) * 2012-09-11 2014-03-27 Canon Inc 撮像素子および撮像装置

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3724924A (en) * 1970-12-23 1973-04-03 Comp Generale Electricite Multiple focusing device
USRE31255E (en) * 1979-02-21 1983-05-24 Honeywell Inc. Light emitting and light detecting semiconductor device for interfacing with an optical fiber
JPS6033345B2 (ja) * 1979-06-08 1985-08-02 日本電気株式会社 電荷転送撮像装置とその駆動方法
JPS59198754A (ja) * 1983-04-26 1984-11-10 Toshiba Corp カラ−用固体撮像デバイス
JPS6053073A (ja) * 1983-09-02 1985-03-26 Hitachi Ltd マイクロレンズ付固体撮像素子および製法
JPS6059752A (ja) * 1983-09-13 1985-04-06 Nec Corp 半導体装置の製造方法
JPS6242558A (ja) * 1985-08-20 1987-02-24 Matsushita Electronics Corp 固体撮像装置
US4694185A (en) * 1986-04-18 1987-09-15 Eastman Kodak Company Light sensing devices with lenticular pixels
DE3613901A1 (de) * 1986-04-24 1987-10-29 Ego Elektro Blanc & Fischer Strahlheizkoerper fuer kochgeraete oder dgl.
JP2678491B2 (ja) * 1988-12-28 1997-11-17 京セラ株式会社 光透過型半導体パッケージ
US4966831A (en) * 1989-04-20 1990-10-30 Eastman Kodak Company Lens arrays for light sensitive devices
US5132759A (en) * 1989-07-28 1992-07-21 Kabushiki Kaisha Toshiba Solid-state imaging device in which reverse bias voltage is automatically set
JPH03148173A (ja) * 1989-11-02 1991-06-24 Mitsubishi Electric Corp マイクロレンズの形成方法
JPH03163871A (ja) * 1989-11-22 1991-07-15 Toshiba Corp 固体撮像装置およびその製造方法
US5239412A (en) * 1990-02-05 1993-08-24 Sharp Kabushiki Kaisha Solid image pickup device having microlenses
US5296724A (en) * 1990-04-27 1994-03-22 Omron Corporation Light emitting semiconductor device having an optical element
US5118924A (en) * 1990-10-01 1992-06-02 Eastman Kodak Company Static control overlayers on opto-electronic devices
KR960000223B1 (ko) * 1990-11-16 1996-01-03 가부시키가이샤 도시바 고체촬상장치 및 그 제조방법
JPH0521769A (ja) * 1991-07-15 1993-01-29 Sharp Corp 固体撮像素子

Also Published As

Publication number Publication date
KR970006732B1 (en) 1997-04-29
DE69313024T2 (de) 1998-02-26
EP0573219A1 (de) 1993-12-08
US5583354A (en) 1996-12-10
KR940006392A (ko) 1994-03-23
EP0573219B1 (de) 1997-08-13
JPH05335531A (ja) 1993-12-17
US5422285A (en) 1995-06-06

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