DE69333799D1 - Vorrichtung mit Gitteranpassung und Verfahren zu ihrer Herstellung - Google Patents

Vorrichtung mit Gitteranpassung und Verfahren zu ihrer Herstellung

Info

Publication number
DE69333799D1
DE69333799D1 DE69333799T DE69333799T DE69333799D1 DE 69333799 D1 DE69333799 D1 DE 69333799D1 DE 69333799 T DE69333799 T DE 69333799T DE 69333799 T DE69333799 T DE 69333799T DE 69333799 D1 DE69333799 D1 DE 69333799D1
Authority
DE
Germany
Prior art keywords
lattice
manufacture
matched device
matched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69333799T
Other languages
English (en)
Other versions
DE69333799T2 (de
Inventor
Masashi Mukaida
Shintaro Miyazawa
Junya Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP4220778A external-priority patent/JP2708671B2/ja
Priority claimed from JP4223796A external-priority patent/JP2708673B2/ja
Priority claimed from JP4240501A external-priority patent/JP2708675B2/ja
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Application granted granted Critical
Publication of DE69333799D1 publication Critical patent/DE69333799D1/de
Publication of DE69333799T2 publication Critical patent/DE69333799T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0576—Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
    • H10N60/0632—Intermediate layers, e.g. for growth control
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0661—Processes performed after copper oxide formation, e.g. patterning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0912—Manufacture or treatment of Josephson-effect devices
    • H10N60/0941—Manufacture or treatment of Josephson-effect devices comprising high-Tc ceramic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/10—Junction-based devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/10—Junction-based devices
    • H10N60/12—Josephson-effect devices
    • H10N60/124—Josephson-effect devices comprising high-Tc ceramic materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
    • Y10S505/701—Coated or thin film device, i.e. active or passive
    • Y10S505/702—Josephson junction present
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
    • Y10S505/704—Wire, fiber, or cable
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/729—Growing single crystal, e.g. epitaxy, bulk

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
DE69333799T 1992-07-28 1993-07-27 Bauelement mit Gitteranpassung und Verfahren zu seiner Herstellung Expired - Fee Related DE69333799T2 (de)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP4220778A JP2708671B2 (ja) 1992-07-28 1992-07-28 超伝導薄膜粒界接合素子の製造方法。
JP22077892 1992-07-28
JP4223796A JP2708673B2 (ja) 1992-08-24 1992-08-24 超伝導薄膜縦型接合素子の製造方法
JP22379692 1992-08-24
JP24050192 1992-09-09
JP4240501A JP2708675B2 (ja) 1992-09-09 1992-09-09 超伝導薄膜層間配線の製造方法

Publications (2)

Publication Number Publication Date
DE69333799D1 true DE69333799D1 (de) 2005-06-02
DE69333799T2 DE69333799T2 (de) 2006-01-19

Family

ID=27330476

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69328278T Expired - Fee Related DE69328278T2 (de) 1992-07-28 1993-07-27 Übergangsvorrichtung mit Gitteranpassung und Verfahren zu ihrer Herstellung
DE69333799T Expired - Fee Related DE69333799T2 (de) 1992-07-28 1993-07-27 Bauelement mit Gitteranpassung und Verfahren zu seiner Herstellung

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE69328278T Expired - Fee Related DE69328278T2 (de) 1992-07-28 1993-07-27 Übergangsvorrichtung mit Gitteranpassung und Verfahren zu ihrer Herstellung

Country Status (3)

Country Link
US (2) US5593950A (de)
EP (3) EP0582889B1 (de)
DE (2) DE69328278T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2994183B2 (ja) * 1993-09-21 1999-12-27 財団法人国際超電導産業技術研究センター 超電導素子およびその作製方法
KR0148596B1 (ko) * 1994-11-28 1998-10-15 양승택 결정 입계 채널을 갖는 초전도 전계효과 소자와 그 제조방법
KR100194621B1 (ko) * 1995-12-21 1999-07-01 정선종 고온초전도 전계효과 소자 및 그 제조방법
US5906965A (en) * 1996-01-19 1999-05-25 Superconductor Technologies, Inc. Thin film superconductor-insulator-superconductor multi-layer films and method for obtaining the same
WO2000022652A2 (en) * 1998-09-14 2000-04-20 The Regents Of The University Of California Superconducting structure including mixed rare earth barium-copper compositions
US6635368B1 (en) 2001-12-20 2003-10-21 The United States Of America As Represented By The Secretary Of The Navy HTS film-based electronic device characterized by low ELF and white noise

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4589001A (en) * 1980-07-09 1986-05-13 Agency Of Industrial Science & Technology Quasiparticle injection control type superconducting device
US4509001A (en) * 1983-03-04 1985-04-02 Matsushita Electric Industrial Co., Ltd. Brushless linear servomotor
JPH0634418B2 (ja) * 1987-09-07 1994-05-02 株式会社半導体エネルギー研究所 超電導素子の作製方法
JPS6439084A (en) * 1987-08-04 1989-02-09 Mitsubishi Electric Corp Josephson element
FR2626715B1 (fr) * 1988-02-02 1990-05-18 Thomson Csf Dispositif en couches minces de materiau supraconducteur et procede de realisation
JPH01241874A (ja) * 1988-03-23 1989-09-26 Mitsubishi Electric Corp ジョゼフソン接合素子
US4962086A (en) * 1988-06-08 1990-10-09 International Business Machines Corporation High Tc superconductor - gallate crystal structures
US5047385A (en) * 1988-07-20 1991-09-10 The Board Of Trustees Of The Leland Stanford Junior University Method of forming superconducting YBa2 Cu3 O7-x thin films with controlled crystal orientation
EP0358879A3 (de) * 1988-09-13 1991-02-27 Hewlett-Packard Company Verfahren zur Herstellung hochintegrierter Verbindungen
US5077266A (en) * 1988-09-14 1991-12-31 Hitachi, Ltd. Method of forming weak-link josephson junction, and superconducting device employing the junction
JPH02253515A (ja) * 1989-03-25 1990-10-12 Showa Electric Wire & Cable Co Ltd セラミックス超電導線路およびその形成方法
CA2037795C (en) * 1990-03-09 1998-10-06 Saburo Tanaka Process for preparing high-temperature superconducting thin films
JPH05894A (ja) * 1990-06-28 1993-01-08 Sumitomo Electric Ind Ltd 複合酸化物超電導薄膜
EP0480814B1 (de) * 1990-10-08 1996-04-24 Sumitomo Electric Industries, Ltd. Supraleitende Einrichtung mit ultradünnem Kanal aus oxydisch supraleitendem Material und Verfahren zu deren Herstellung
EP0484252B1 (de) * 1990-10-31 1996-03-20 Sumitomo Electric Industries, Ltd. Supraleitende Einrichtung aus oxydisch supraleitendem Material
EP0484248B1 (de) * 1990-10-31 1997-01-08 Sumitomo Electric Industries, Ltd. Supraleitende Schaltung und Verfahren zu ihrer Herstellung
JP2703404B2 (ja) * 1990-10-31 1998-01-26 住友電気工業株式会社 超電導回路とその作製方法
JPH04168779A (ja) * 1990-11-01 1992-06-16 Sumitomo Electric Ind Ltd 超電導回路とその作製方法
JPH04214097A (ja) * 1990-12-13 1992-08-05 Sumitomo Electric Ind Ltd 超電導薄膜の作製方法
JPH04268774A (ja) * 1991-02-25 1992-09-24 Riken Corp ジョセフソン接合
EP0502787B1 (de) * 1991-03-04 1996-08-14 Sumitomo Electric Industries, Ltd. Supraleitende oxydische Dünnschicht mit lokal unterschiedlichen Kristallorientierungen und ein Verfahren zu deren Herstellung
US5157466A (en) * 1991-03-19 1992-10-20 Conductus, Inc. Grain boundary junctions in high temperature superconductor films
JPH04302183A (ja) * 1991-03-29 1992-10-26 Furukawa Electric Co Ltd:The トンネル型ジョセフソン接合の形成方法
DE69215993T2 (de) * 1991-07-16 1997-06-19 Sumitomo Electric Industries Vorrichtung mit Josephson-Übergang aus supraleitendem Oxyd und Verfahren zu seiner Herstellung
EP0545811B1 (de) * 1991-12-02 1997-04-09 Sumitomo Electric Industries, Ltd. Supraleitende Mehrschichtenverschaltung aus supraleitendem oxidischen Material und Verfahren zu ihrer Herstellung
JPH05251771A (ja) * 1991-12-02 1993-09-28 Sumitomo Electric Ind Ltd 人工粒界型ジョセフソン接合素子およびその作製方法
EP0557207B1 (de) * 1992-02-19 2000-05-03 Sumitomo Electric Industries, Ltd. Josephson-Übergangseinrichtung aus oxidischem Supraleiter und Verfahren zu ihrer Herstellung

Also Published As

Publication number Publication date
DE69333799T2 (de) 2006-01-19
DE69328278D1 (de) 2000-05-11
EP0582889A1 (de) 1994-02-16
EP1544926A3 (de) 2005-07-20
EP0973208A3 (de) 2000-03-08
DE69328278T2 (de) 2000-11-30
EP1544926A2 (de) 2005-06-22
EP0973208A2 (de) 2000-01-19
EP0973208B1 (de) 2005-04-27
EP0582889B1 (de) 2000-04-05
US5593950A (en) 1997-01-14
US5821200A (en) 1998-10-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee