DE3888463D1 - Anordnung mit Supergitter-Struktur und Verfahren und Vorrichtung zu ihrer Herstellung. - Google Patents
Anordnung mit Supergitter-Struktur und Verfahren und Vorrichtung zu ihrer Herstellung.Info
- Publication number
- DE3888463D1 DE3888463D1 DE88119409T DE3888463T DE3888463D1 DE 3888463 D1 DE3888463 D1 DE 3888463D1 DE 88119409 T DE88119409 T DE 88119409T DE 3888463 T DE3888463 T DE 3888463T DE 3888463 D1 DE3888463 D1 DE 3888463D1
- Authority
- DE
- Germany
- Prior art keywords
- making
- same
- superlattice structure
- superlattice
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
- H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching for microworking, e.g. etching of gratings, trimming of electrical components
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/2633—Bombardment with radiation with high-energy radiation for etching, e.g. sputteretching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
- H01L21/26546—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8221—Three dimensional integrated circuits stacked in different levels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/8252—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using III-V technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
- H01L29/151—Compositional structures
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/046—Electron beam treatment of devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/051—Etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/084—Ion implantation of compound devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/16—Superlattice
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/962—Quantum dots and lines
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62294061A JP2650930B2 (ja) | 1987-11-24 | 1987-11-24 | 超格子構作の素子製作方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3888463D1 true DE3888463D1 (de) | 1994-04-21 |
DE3888463T2 DE3888463T2 (de) | 1994-09-15 |
Family
ID=17802780
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3888463T Expired - Fee Related DE3888463T2 (de) | 1987-11-24 | 1988-11-22 | Anordnung mit Supergitter-Struktur und Verfahren und Vorrichtung zu ihrer Herstellung. |
Country Status (5)
Country | Link |
---|---|
US (2) | US4983540A (de) |
EP (1) | EP0317952B1 (de) |
JP (1) | JP2650930B2 (de) |
KR (1) | KR920001455B1 (de) |
DE (1) | DE3888463T2 (de) |
Families Citing this family (103)
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US5600483A (en) * | 1994-05-10 | 1997-02-04 | Massachusetts Institute Of Technology | Three-dimensional periodic dielectric structures having photonic bandgaps |
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CN101366095B (zh) * | 2005-12-02 | 2010-11-10 | 阿利斯公司 | 离子源、系统和方法 |
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JP2010010290A (ja) * | 2008-06-25 | 2010-01-14 | Panasonic Electric Works Co Ltd | 柱状結晶構造体の製造方法および装置 |
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US20160089723A1 (en) * | 2010-06-29 | 2016-03-31 | Korea Advanced Institute Of Science And Technology | Method of fabricating nanostructures using macro pre-patterns |
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GB1110958A (en) * | 1964-10-12 | 1968-04-24 | Grace W R & Co | Heat stabilized vinyl chloride polymer compositions |
JPS5288900A (en) * | 1976-01-19 | 1977-07-25 | Matsushita Electric Ind Co Ltd | Ion beam machine tool |
FR2383702A1 (fr) * | 1977-03-18 | 1978-10-13 | Anvar | Perfectionnements aux procedes et dispositifs de dopage de materiaux semi-conducteurs |
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JPS58106750A (ja) * | 1981-12-18 | 1983-06-25 | Toshiba Corp | フオ−カスイオンビ−ム加工方法 |
JPS59168652A (ja) * | 1983-03-16 | 1984-09-22 | Hitachi Ltd | 素子修正方法及びその装置 |
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US4783427A (en) * | 1986-02-18 | 1988-11-08 | Texas Instruments Incorporated | Process for fabricating quantum-well devices |
US4771010A (en) * | 1986-11-21 | 1988-09-13 | Xerox Corporation | Energy beam induced layer disordering (EBILD) |
JP2569057B2 (ja) * | 1987-07-10 | 1997-01-08 | 株式会社日立製作所 | X線マスクの欠陥修正方法 |
US4800100A (en) * | 1987-10-27 | 1989-01-24 | Massachusetts Institute Of Technology | Combined ion and molecular beam apparatus and method for depositing materials |
US4908226A (en) * | 1988-05-23 | 1990-03-13 | Hughes Aircraft Company | Selective area nucleation and growth method for metal chemical vapor deposition using focused ion beams |
-
1987
- 1987-11-24 JP JP62294061A patent/JP2650930B2/ja not_active Expired - Fee Related
-
1988
- 1988-11-11 KR KR1019880014849A patent/KR920001455B1/ko not_active IP Right Cessation
- 1988-11-18 US US07/273,012 patent/US4983540A/en not_active Expired - Fee Related
- 1988-11-22 EP EP88119409A patent/EP0317952B1/de not_active Expired - Lifetime
- 1988-11-22 DE DE3888463T patent/DE3888463T2/de not_active Expired - Fee Related
-
1990
- 1990-10-10 US US07/597,354 patent/US5113072A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR890009028A (ko) | 1989-07-13 |
EP0317952B1 (de) | 1994-03-16 |
KR920001455B1 (ko) | 1992-02-14 |
JPH01136327A (ja) | 1989-05-29 |
DE3888463T2 (de) | 1994-09-15 |
EP0317952A2 (de) | 1989-05-31 |
US4983540A (en) | 1991-01-08 |
EP0317952A3 (en) | 1990-01-31 |
JP2650930B2 (ja) | 1997-09-10 |
US5113072A (en) | 1992-05-12 |
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