ATE497250T1 - Verfahren für durch einen fokussierten elektronenstrahl induziertes ätzen - Google Patents

Verfahren für durch einen fokussierten elektronenstrahl induziertes ätzen

Info

Publication number
ATE497250T1
ATE497250T1 AT02023217T AT02023217T ATE497250T1 AT E497250 T1 ATE497250 T1 AT E497250T1 AT 02023217 T AT02023217 T AT 02023217T AT 02023217 T AT02023217 T AT 02023217T AT E497250 T1 ATE497250 T1 AT E497250T1
Authority
AT
Austria
Prior art keywords
electron beam
focused electron
reaction product
electrons
etching induced
Prior art date
Application number
AT02023217T
Other languages
English (en)
Inventor
Hans Wilfried Peter Koops
Klaus Edinger
Original Assignee
Zeiss Carl Sms Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zeiss Carl Sms Gmbh filed Critical Zeiss Carl Sms Gmbh
Application granted granted Critical
Publication of ATE497250T1 publication Critical patent/ATE497250T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H01J2237/31742—Etching microareas for repairing masks
    • H01J2237/31744—Etching microareas for repairing masks introducing gas in vicinity of workpiece

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Recrystallisation Techniques (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
AT02023217T 2002-10-16 2002-10-16 Verfahren für durch einen fokussierten elektronenstrahl induziertes ätzen ATE497250T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP02023217A EP1411538B1 (de) 2002-10-16 2002-10-16 Verfahren für durch einen fokussierten Elektronenstrahl induziertes Ätzen

Publications (1)

Publication Number Publication Date
ATE497250T1 true ATE497250T1 (de) 2011-02-15

Family

ID=32039139

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02023217T ATE497250T1 (de) 2002-10-16 2002-10-16 Verfahren für durch einen fokussierten elektronenstrahl induziertes ätzen

Country Status (7)

Country Link
US (1) US7452477B2 (de)
EP (1) EP1411538B1 (de)
JP (1) JP2004140346A (de)
AT (1) ATE497250T1 (de)
DE (1) DE60239062D1 (de)
IL (1) IL157999A (de)
TW (1) TWI334155B (de)

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EP1363164B1 (de) 2002-05-16 2015-04-29 NaWoTec GmbH Verfahren zum Ätzen einer Oberfläche mittels durch fokussierten Elektronenstrahl hervorgerufenen chemischen Reaktionen auf dieser Oberfläche
DE10302794A1 (de) * 2003-01-24 2004-07-29 Nawotec Gmbh Verfahren und Vorrichtung zur Herstellung von Korpuskularstrahlsystemen
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US8541066B2 (en) * 2007-11-26 2013-09-24 University Of North Carolina At Charlotte Light-induced directed self-assembly of periodic sub-wavelength nanostructures
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DE102021206564A1 (de) * 2021-06-24 2022-12-29 Carl Zeiss Smt Gmbh Endpunktbestimmung durch induzierte desorption von gasen und analyse der wiederbedeckung

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Also Published As

Publication number Publication date
JP2004140346A (ja) 2004-05-13
EP1411538B1 (de) 2011-01-26
DE60239062D1 (de) 2011-03-10
US7452477B2 (en) 2008-11-18
EP1411538A1 (de) 2004-04-21
TWI334155B (en) 2010-12-01
TW200406803A (en) 2004-05-01
IL157999A0 (en) 2004-03-28
US20050072753A1 (en) 2005-04-07
IL157999A (en) 2013-06-27

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