KR890009028A - 초격자 구조의 소자의 제조방법 및 그 제조장치 - Google Patents

초격자 구조의 소자의 제조방법 및 그 제조장치 Download PDF

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KR890009028A
KR890009028A KR1019880014849A KR880014849A KR890009028A KR 890009028 A KR890009028 A KR 890009028A KR 1019880014849 A KR1019880014849 A KR 1019880014849A KR 880014849 A KR880014849 A KR 880014849A KR 890009028 A KR890009028 A KR 890009028A
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superlattice structure
manufacturing
superlattice
potential barrier
ion beam
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KR920001455B1 (ko
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히로시 야마구찌
게이야 사이또
후미까즈 이또
고지 이시다
신지 사까노
마사오 다무라
쇼지 슈꾸리
도루 이시따니
쯔네오 이찌구찌
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미다 가쓰시게
가부시기가이샤 히다찌세이사꾸쇼
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    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching for microworking, e.g. etching of gratings, trimming of electrical components
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    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
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    • H01L21/26—Bombardment with radiation
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    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
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    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/962—Quantum dots and lines

Abstract

내용 없음

Description

초격자 구조의 소자의 제조방법 및 그 제조장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도 a는 본 발명의 1실시예에서의 2차원 다중 양자 웰구조(다중 양자 웰 와이어)의 제조공정을 도시한 사시도.
제 1 도 b는 본 발명의 다른 실시예에서의 3차원 다중 양자 웰 구조(다중 양자 웰 도트)의 제조 공정을 도시한 사시도.

Claims (27)

  1. (a) 웰층(103,105,107)과 포텐셜 장벽층(102,104,106)이 교대로 적층되어 있는 1차원 초격자 구조를 준비하는 공정, (b) 집속된 이온빔(113)을 발생시키는 공정, (c) 상기 1차원 초격자 구조의 초격자층에 상기 이온빔(113)을 조사하고, 또한 상기 이온빔을 상기 초격자층의 방향에 직선형상으로 주사하여 포템셜 장벽층(108,109,110,111,114,115,116,117)을 형성하는 공정을 갖는 초격자 구조의 소자의 제조방법.
  2. 특허청구의 범위 제1항에 있어서, 상기 이온빔(113)이 0.1㎛이하로 접속되어 있는 초격자 구조의 소자의 제조방법.
  3. 특허청구의 범위 제1항에 있어서, 상기 이온빔(113)이 상기 초격자층에 수직으로 조사되는 초격자 구조의 소자의 제조방법.
  4. 특허청구의 범위 제1항에 있어서, 상기 공정(c)에서의 주사 이온빔의 조사에 의해 적어도 2개의 평행한 홈(108,109,110,111)을 형성하는 초격자 구조의 소자의 제조방법.
  5. 특허청구의 범위 제1항에 있어서, 상기 공정(c)에서의 주사 이온빔의 조사에 의해 적어도 2개의 평행한 불순물 주입부분(2109)을 형성하는 초격자 구조의 제조방법.
  6. 특허청구의 범위 제4항에 있어서, 상기 적어도 2개의 평행한 홈(108,109,110,111)내에 에너지 빔 유도 CVD에 의해 바라는 물질을 퇴적하여 퇴적부(2403,2404,2405)를 형성하는 공정을 갖는 초격자 구조의 소자의 제조방법.
  7. 특허청구의 범위 제1항에 있어서, 상기 공정(c)에서의 주사 이온빔의 조사에 의해 적어도 2개의 평행한 홈(108,109,110,111')과 이것에 직교하는 적어도 2개의 홈(114,115,116,117)을 형성하는 초격자 구조의 소자의 제조방법.
  8. 특허청구의 범위 제1항에 있어서, 상기 공정(c)에서의 주사 이온빔의 조사에 의해 적어도 2개의 평행한 불순물 주입부분(2109)와 이것에 직교하는 적어도 2개의 불순물 주입부분을 형성하는 초격자 구조의 소자의 제조방법.
  9. 특허청구의 범위 제7항에 있어서, 상기 적어도 2개의 평행한 홈(108,109,110,111')내 및 이것에 직교하는 적어도 2개의 홈(114,115,116,117)내에 절연물을 퇴적하는 공정을 갖는 초격자 구조의 소자의 제조방법.
  10. 웰층(103,105,107)과 포텐셜 장벽층(102,104,106)이 교대로 적층되어 있는 1차원적초격자 구조를 갖고, 집속 이온빔에 의한 가공에 의해 형성된 적어도 2개의 평행한 홈(108,109,110,111)을 구비한 초격자 구조의 소자.
  11. 특허청구의 범위 제10항에 있어서, 또 상기 적어도 2개의 평행한 홈(108,109,110,111)에 직교하는 적어도 2개의 홈(114,115,116,117)을 구비한 초격자 구조의 소자.
  12. 웰층(103,105,107)과 포텐셜 장벽층(102,104,106)이 교대로 적층되어 있는 1차원 초격자 구조를 갖고, 집속 이온빔에 의한 주입에 의해 형성된 적어도 2개의 평행한 불순물 주입부분(2109)를 구비한 초격자 구조의 소자.
  13. 특허청구의 범위 제12에 있어서, 또 상기 적어도 2개의 평행한 불순물 주입부분(2109)와 직교하는 적어도 2개의 불순물 주입부분을 구비한 초격자 구조의 소자.
  14. 웰층(103,105,107)과 포텐셜 장벽층(102,104,106)이 교대로 적층되어 있는 1차원 초격자 구조를 갖고, 집속 이온 빔 가공에 의해 형성된 적어도 2개의 평행한 홈(108,109,110,111)을 구비하고, 상기 홈(108,109,110,111)내에 에너지 빔 유도 CVD에 의해 바라는 물질을 퇴적한 퇴적부(2403,2404,2405)를 구비한 초격자 구조의 소자.
  15. 특허청구의 범위 제14항에 있어서, 상기 적어도 2개의 평행한 홈(108,109,110,111)과 직교하는 적어도 2개의 홈(114,115,116,117)을 또 구비하고, 또한 상기 홈(114,115,116,117)내에 에너지 빔 유도 CVD에 의해 바라는 물질을 퇴적한 퇴적부(2403,2404,2405)를 구비한 초격자 구조의 소자.
  16. 이온 빔 (113)을 인출하여 접속시켜서 조사하는 제1의 수단(1200∼1211,1217,1904)와, 상기 제1의 수단에서 집속 조사된 이온 빔을 웨층(103,105,107)과 포텐셜 장벽층(102,104,106)이 교대로 적층되어 있는 1차원적 초격자 구조에 대해서 상대적으로 위치 결정해서 초격자의 층의 방향에 직선 형상으로 주사하여 여러개의 포텐셜 장벽층(108∼111,114∼117)을 형성하는 제2의 수단(1212,1218,1220,1221,1223)을 구비한 초격자 구조의 소자의 제조장치.
  17. 특허청구의 범위 제16항에 있어서, 상기 제1의 수단은 2단의 렌즈를 포함하는 집속 광학계(1204∼1208,1214∼1216,1219)를 갖는 초격자 구조의 소자의 제조장치.
  18. 특허청구의 범위 제17항에 있어서, 상기 제1수단의 2단의 렌즈 사이에 상기 제2의 수단으로써 X 및 Y방향에 편향시키는 편향 전극을 여러쌍(1212,1213)을 구비하고 이것의 편향 제어전원(1218)을 구비한 초격자 구조의 소자의 제조장치.
  19. 특허청구의 범위 제16항에 있어서, 상기 제1의 수단으로써 특정한 이온 종류를 분리 하는 제3의 수단(1901∼1903)을 구비한 초격자 구조의 소자의 제조장치.
  20. 특허청구의 범위 제16항에 있어서, 또 에너지 빔 유도 CVD에 의해 상기 포텐셜 장벽층으로써 형성된 홈에 바라는 물질을 퇴적하기 위한 수단(2402,3102,3103)을 구비한 초격자 구조의 소자의 제조장치.
  21. 특허청구의 범위 제16항에 있어서, 상기 제2의 수단으로써 이온빔 유도 에칭에 의해 상기 포텐셜 장벽층으로써 홈을 형성하기 위한 반응성 가스 도입수단(1907)을 구비한 초격자 구조의 소자의 제조장치.
  22. 특허청구의 범위 제16항에 있어서, 또 이온빔 조사에 의해 생기는 결함을 에너지 빔 어닐에 의해 회복 시키기 위한 에너지빔 조사수단 (2901∼2905, 2911, 3001,3102∼3104)을 구비한 초격자 구조의 소자의 제조장치.
  23. 특허청구의 범위 제16항에 있어서, 또 에너지 빔을 조사하였을때 상기 초격자 구조에서 발생하는 하전입자를 검출해서 상기 포텐셜 장벽층을 포함하는 초격자 구조를 관찰하는 관찰 수단(1221,1220, 3001)을 구비한 초격자 구조의 소자의 제조장치.
  24. 특허청구의 범위 제16항에 있어서, 또 에너지 빔을 조사하였을때 상기 초격자 구조에서 발생하는 하전 입자를 검출해서 상기 포텐셜 장벽층을 포함하는 초격자 구조를 분석하는 분석수단(3106, 3107)을 구비한 초격자 구조의 소자의 제조장치.
  25. 특허청구의 범위 제16항에 있어서, 또 제2의 수단에 의해서 형성되는 포텐셜 장벽층의 깊이를 검출 위한 검출수단(1401∼1403,1405,1905∼1907)을 구비한 초격자 구조의 소자의 제조장치.
  26. 특허청구의 범위 제16항에 있어서, 또 에너지 빔을 조사하였을때 상기 초격자 구조를 흐르는 전류의 출력을 검출해서 초격자 구조의 소자의 특성을 검사하기 위한 수단(2908, 2909, 2910)을 구비한 초격자 구조의 소자의 제조장치.
  27. 웰층(103,105,107)과 포텐셜 장벽층(102,104,106)이 교대로 적층되어 있는 1차원 초격자 구조를 형성하는 제1수단(3203∼3209), 집속 조사된 이온빔(113)을 상기 웰층과 포텐셜 장벽층이 교대로 적층되어 있는 상기 1차원 초격자 구조에 대해서 상대적으로 위치 결정해서 초격자의 층의 방향에 직선형상으로 주사하고, 여러개의 포텐셜 장벽층의 (108∼111,114∼117)을 형성하는 제2의 수단(1200∼1211,1217,1904,1212,1218,1220,1221,1223), 상기 제1의 수단의 시료실과 제2의 수단의 시료실을 게이트 밸브를 거쳐서 접속하는 접속수단(3202,3212,3213)을 구비한 초격자 구조의 제조장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880014849A 1987-11-24 1988-11-11 초격자 구조의 소자의 제조방법 및 그 제조장치 KR920001455B1 (ko)

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