DE69011809D1 - Halbleiteranordnung und Verfahren zu ihrer Herstellung. - Google Patents
Halbleiteranordnung und Verfahren zu ihrer Herstellung.Info
- Publication number
- DE69011809D1 DE69011809D1 DE69011809T DE69011809T DE69011809D1 DE 69011809 D1 DE69011809 D1 DE 69011809D1 DE 69011809 T DE69011809 T DE 69011809T DE 69011809 T DE69011809 T DE 69011809T DE 69011809 D1 DE69011809 D1 DE 69011809D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacture
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8611—Planar PN junction diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/7302—Bipolar junction transistors structurally associated with other devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/868—PIN diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
- Thyristors (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB8924557A GB2237930A (en) | 1989-11-01 | 1989-11-01 | A semiconductor device and method of manufacturing a semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69011809D1 true DE69011809D1 (de) | 1994-09-29 |
DE69011809T2 DE69011809T2 (de) | 1995-03-09 |
Family
ID=10665500
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69011809T Expired - Fee Related DE69011809T2 (de) | 1989-11-01 | 1990-10-29 | Halbleiteranordnung und Verfahren zu ihrer Herstellung. |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP0426252B1 (de) |
JP (1) | JPH0648691B2 (de) |
KR (1) | KR910010732A (de) |
DE (1) | DE69011809T2 (de) |
GB (1) | GB2237930A (de) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6011298A (en) * | 1996-12-31 | 2000-01-04 | Stmicroelectronics, Inc. | High voltage termination with buried field-shaping region |
DE19816448C1 (de) | 1998-04-14 | 1999-09-30 | Siemens Ag | Universal-Halbleiterscheibe für Hochspannungs-Halbleiterbauelemente, ihr Herstellungsverfahren und ihre Verwendung |
DE19823944A1 (de) | 1998-05-28 | 1999-12-02 | Siemens Ag | Leistungsdioden-Struktur |
DE19830332C2 (de) * | 1998-07-07 | 2003-04-17 | Infineon Technologies Ag | Vertikales Halbleiterbauelement mit reduziertem elektrischem Oberflächenfeld |
DE19930783A1 (de) * | 1999-07-03 | 2001-01-04 | Bosch Gmbh Robert | Halbleiterbauelement |
WO2006024322A1 (en) | 2004-08-31 | 2006-03-09 | Freescale Semiconductor, Inc. | Power semiconductor device |
DE102006025958B3 (de) * | 2006-06-02 | 2007-10-11 | Infineon Technologies Ag | Sanft schaltendes Halbleiterbauelement mit hoher Robustheit und geringen Schaltverlusten |
DE102012103699A1 (de) | 2012-02-15 | 2013-08-22 | First Sensor AG | Halbleiterstruktur für einen Strahlungsdetektor sowie Strahlungsdetektor |
EP2884538A1 (de) * | 2013-12-16 | 2015-06-17 | ABB Technology AB | Leistungshalbleiterbauelement |
SE541571C2 (en) * | 2017-09-15 | 2019-11-05 | Ascatron Ab | A double grid structure |
DE102018112109A1 (de) * | 2018-05-18 | 2019-11-21 | Infineon Technologies Ag | Siliziumcarbid halbleiterbauelement |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5320194B2 (de) * | 1972-04-20 | 1978-06-24 | ||
US4267557A (en) * | 1978-06-08 | 1981-05-12 | Tokyo Shibaura Denki Kabushiki Kaisha | Semiconductor device |
EP0146181B1 (de) * | 1983-12-16 | 1989-03-15 | Koninklijke Philips Electronics N.V. | Halbleiteranordnung mit einem zusammengefassten Bipolar-Feldeffekttransistor |
GB2193596A (en) * | 1986-08-08 | 1988-02-10 | Philips Electronic Associated | A semiconductor diode |
-
1989
- 1989-11-01 GB GB8924557A patent/GB2237930A/en not_active Withdrawn
-
1990
- 1990-10-29 EP EP90202862A patent/EP0426252B1/de not_active Expired - Lifetime
- 1990-10-29 DE DE69011809T patent/DE69011809T2/de not_active Expired - Fee Related
- 1990-10-30 JP JP2290957A patent/JPH0648691B2/ja not_active Expired - Lifetime
- 1990-11-30 KR KR1019900017403A patent/KR910010732A/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
GB2237930A (en) | 1991-05-15 |
EP0426252A2 (de) | 1991-05-08 |
JPH03155137A (ja) | 1991-07-03 |
JPH0648691B2 (ja) | 1994-06-22 |
EP0426252B1 (de) | 1994-08-24 |
GB8924557D0 (en) | 1989-12-20 |
DE69011809T2 (de) | 1995-03-09 |
EP0426252A3 (en) | 1991-06-26 |
KR910010732A (ko) | 1991-06-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8327 | Change in the person/name/address of the patent owner |
Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL |
|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |