DE69033900T2 - Halbleiteranordnung und Verfahren zu seiner Herstellung - Google Patents

Halbleiteranordnung und Verfahren zu seiner Herstellung

Info

Publication number
DE69033900T2
DE69033900T2 DE69033900T DE69033900T DE69033900T2 DE 69033900 T2 DE69033900 T2 DE 69033900T2 DE 69033900 T DE69033900 T DE 69033900T DE 69033900 T DE69033900 T DE 69033900T DE 69033900 T2 DE69033900 T2 DE 69033900T2
Authority
DE
Germany
Prior art keywords
manufacture
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69033900T
Other languages
English (en)
Other versions
DE69033900D1 (de
Inventor
Katsuto Katoh
Kiyomi Naruke
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE69033900D1 publication Critical patent/DE69033900D1/de
Application granted granted Critical
Publication of DE69033900T2 publication Critical patent/DE69033900T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
DE69033900T 1989-03-31 1990-03-30 Halbleiteranordnung und Verfahren zu seiner Herstellung Expired - Fee Related DE69033900T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1080409A JPH0766946B2 (ja) 1989-03-31 1989-03-31 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
DE69033900D1 DE69033900D1 (de) 2002-02-21
DE69033900T2 true DE69033900T2 (de) 2002-08-22

Family

ID=13717495

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69033900T Expired - Fee Related DE69033900T2 (de) 1989-03-31 1990-03-30 Halbleiteranordnung und Verfahren zu seiner Herstellung

Country Status (5)

Country Link
US (1) US5169792A (de)
EP (1) EP0390219B1 (de)
JP (1) JPH0766946B2 (de)
KR (1) KR930008586B1 (de)
DE (1) DE69033900T2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2522853B2 (ja) 1990-06-29 1996-08-07 シャープ株式会社 半導体記憶装置の製造方法
KR920008951A (ko) * 1990-10-05 1992-05-28 김광호 더블도우프된 채널스톱층을 가지는 반도체장치 및 그 제조방법
DE69320582T2 (de) * 1992-10-07 1999-04-01 Koninkl Philips Electronics Nv Verfahren zur Herstellung eines integrierten Schaltkreises mit einem nichtflüchtigen Speicherelement
EP0637074A3 (de) * 1993-07-30 1995-06-21 Sgs Thomson Microelectronics Verfahren zur Herstellung von aktiven und isolierten Bereichen durch gespaltene Abbildung.
US5719065A (en) 1993-10-01 1998-02-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device with removable spacers
JP2600621B2 (ja) * 1994-09-14 1997-04-16 日本電気株式会社 半導体装置の製造方法
US5814529A (en) 1995-01-17 1998-09-29 Semiconductor Energy Laboratory Co., Ltd. Method for producing a semiconductor integrated circuit including a thin film transistor and a capacitor
KR0146528B1 (ko) * 1995-04-11 1998-11-02 김주용 반도체 소자의 제조방법
JP3419606B2 (ja) * 1995-09-14 2003-06-23 富士通株式会社 半導体装置とその製造方法
TW334581B (en) * 1996-06-04 1998-06-21 Handotai Energy Kenkyusho Kk Semiconductor integrated circuit and fabrication method thereof
US6903434B2 (en) * 1999-05-20 2005-06-07 Alliance Semiconductors Method and apparatus for integrating flash EPROM and SRAM cells on a common substrate
US7038239B2 (en) 2002-04-09 2006-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
JP3989761B2 (ja) 2002-04-09 2007-10-10 株式会社半導体エネルギー研究所 半導体表示装置
US7411215B2 (en) 2002-04-15 2008-08-12 Semiconductor Energy Laboratory Co., Ltd. Display device and method of fabricating the same
JP3989763B2 (ja) 2002-04-15 2007-10-10 株式会社半導体エネルギー研究所 半導体表示装置
US7256421B2 (en) 2002-05-17 2007-08-14 Semiconductor Energy Laboratory, Co., Ltd. Display device having a structure for preventing the deterioration of a light emitting device

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3868274A (en) * 1974-01-02 1975-02-25 Gen Instrument Corp Method for fabricating MOS devices with a multiplicity of thresholds on a semiconductor substrate
JPS54128299A (en) * 1978-03-29 1979-10-04 Hitachi Ltd Dynamic mos memory ic
US4229755A (en) * 1978-08-15 1980-10-21 Rockwell International Corporation Fabrication of very large scale integrated circuits containing N-channel silicon gate nonvolatile memory elements
US4502208A (en) * 1979-01-02 1985-03-05 Texas Instruments Incorporated Method of making high density VMOS electrically-programmable ROM
JPS56120166A (en) * 1980-02-27 1981-09-21 Hitachi Ltd Semiconductor ic device and manufacture thereof
JPS5713772A (en) * 1980-06-30 1982-01-23 Hitachi Ltd Semiconductor device and manufacture thereof
JPS59127858A (ja) * 1983-01-13 1984-07-23 Seiko Epson Corp 集積回路
US4701776A (en) * 1983-08-29 1987-10-20 Seeq Technology, Inc. MOS floating gate memory cell and process for fabricating same
JPS614240A (ja) * 1984-06-18 1986-01-10 Toshiba Corp 半導体装置の製造方法
JPS61156830A (ja) * 1984-12-28 1986-07-16 Toshiba Corp 半導体装置およびその製造方法
US4841481A (en) * 1985-10-25 1989-06-20 Hitachi, Ltd. Semiconductor memory device
JP2644776B2 (ja) * 1987-11-02 1997-08-25 株式会社日立製作所 半導体装置及びその製造方法

Also Published As

Publication number Publication date
EP0390219B1 (de) 2002-01-16
DE69033900D1 (de) 2002-02-21
EP0390219A3 (de) 1992-02-05
EP0390219A2 (de) 1990-10-03
KR900015253A (ko) 1990-10-26
KR930008586B1 (ko) 1993-09-09
US5169792A (en) 1992-12-08
JPH02260565A (ja) 1990-10-23
JPH0766946B2 (ja) 1995-07-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee