JPS6439084A - Josephson element - Google Patents

Josephson element

Info

Publication number
JPS6439084A
JPS6439084A JP62195696A JP19569687A JPS6439084A JP S6439084 A JPS6439084 A JP S6439084A JP 62195696 A JP62195696 A JP 62195696A JP 19569687 A JP19569687 A JP 19569687A JP S6439084 A JPS6439084 A JP S6439084A
Authority
JP
Japan
Prior art keywords
axis
barrier layer
tunnel barrier
parallel
superconductors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62195696A
Other languages
Japanese (ja)
Inventor
Kazuyoshi Kojima
Kyozo Kanemoto
Yasuki Tokuda
Shigemitsu Maruno
Teruhito Matsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP62195696A priority Critical patent/JPS6439084A/en
Publication of JPS6439084A publication Critical patent/JPS6439084A/en
Pending legal-status Critical Current

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  • Superconductor Devices And Manufacturing Methods Thereof (AREA)

Abstract

PURPOSE:To obtain a Josephson element having a large critical current value, by making the direction of the C axis of a crystal structure substantially in parallel with respect to a tunnel barrier layer. CONSTITUTION:Superconductors 1 and 3 are arranged, with a tunnel barrier layer 2 inbetween. The tunnel barrier layer 2 is constituted so that the layer is substantially in parallel with the a C axis (direction of an arrow C). Namely, yttrium-barium-copper based oxide superconductors are formed on a substrate comprising, e.g., strontium titanate by a sputtering method. Then, the superconductors having a crystal structure, whose C axis is in parallel with the substrate, is obtained. As the tunnel barrier layer 2 thereon, e.g., yttrium oxide is formed by an evaporation method or a sputtering method. Thus a Josephson element can be manufactured. When a current is made to flow in a plane, which is perpendicular to the C axis, a large critical current can be obtained.
JP62195696A 1987-08-04 1987-08-04 Josephson element Pending JPS6439084A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62195696A JPS6439084A (en) 1987-08-04 1987-08-04 Josephson element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62195696A JPS6439084A (en) 1987-08-04 1987-08-04 Josephson element

Publications (1)

Publication Number Publication Date
JPS6439084A true JPS6439084A (en) 1989-02-09

Family

ID=16345472

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62195696A Pending JPS6439084A (en) 1987-08-04 1987-08-04 Josephson element

Country Status (1)

Country Link
JP (1) JPS6439084A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0476687A2 (en) * 1990-09-20 1992-03-25 Sumitomo Electric Industries, Limited Superconductor junction structure and process for fabricating the same
JPH04111368A (en) * 1990-08-30 1992-04-13 Mitsubishi Electric Corp Formation method for oxide superconductor film
JPH04167578A (en) * 1990-10-31 1992-06-15 Sumitomo Electric Ind Ltd Superconductive circuit and manufacture thereof
US5126868A (en) * 1988-12-27 1992-06-30 Casio Computer Co., Ltd. Color compensated double layered liquid crystal display device
FR2675951A1 (en) * 1991-04-23 1992-10-30 Thomson Csf JOSEPHSON JUNCTION STRUCTURE.
US5232903A (en) * 1987-05-06 1993-08-03 Semiconductor Energy Laboratory Co., Ltd. Oxide superconducting device having uniform oxygen concentration
JPH0677545A (en) * 1992-08-24 1994-03-18 Nippon Telegr & Teleph Corp <Ntt> Superconducting thin film vertical type junction element and its manufacture
US5593950A (en) * 1992-07-28 1997-01-14 Nippon Telegraph & Telephone Corporation Lattice matching super conducting device with a- and c- axes

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5232903A (en) * 1987-05-06 1993-08-03 Semiconductor Energy Laboratory Co., Ltd. Oxide superconducting device having uniform oxygen concentration
US5126868A (en) * 1988-12-27 1992-06-30 Casio Computer Co., Ltd. Color compensated double layered liquid crystal display device
JPH04111368A (en) * 1990-08-30 1992-04-13 Mitsubishi Electric Corp Formation method for oxide superconductor film
EP0476687A2 (en) * 1990-09-20 1992-03-25 Sumitomo Electric Industries, Limited Superconductor junction structure and process for fabricating the same
US5488030A (en) * 1990-09-20 1996-01-30 Sumitomo Electric Industries, Inc. Superconductor junction structure including two oxide superconductor layers separated by a non-superconducting layer
JPH04167578A (en) * 1990-10-31 1992-06-15 Sumitomo Electric Ind Ltd Superconductive circuit and manufacture thereof
FR2675951A1 (en) * 1991-04-23 1992-10-30 Thomson Csf JOSEPHSON JUNCTION STRUCTURE.
US5378683A (en) * 1991-04-23 1995-01-03 Thomson-Csf Josephson junction structure
US5593950A (en) * 1992-07-28 1997-01-14 Nippon Telegraph & Telephone Corporation Lattice matching super conducting device with a- and c- axes
JPH0677545A (en) * 1992-08-24 1994-03-18 Nippon Telegr & Teleph Corp <Ntt> Superconducting thin film vertical type junction element and its manufacture

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