DE69226488T2 - Halbleiterspeicheranordnung und Verfahren zu ihrer Herstellung - Google Patents

Halbleiterspeicheranordnung und Verfahren zu ihrer Herstellung

Info

Publication number
DE69226488T2
DE69226488T2 DE69226488T DE69226488T DE69226488T2 DE 69226488 T2 DE69226488 T2 DE 69226488T2 DE 69226488 T DE69226488 T DE 69226488T DE 69226488 T DE69226488 T DE 69226488T DE 69226488 T2 DE69226488 T2 DE 69226488T2
Authority
DE
Germany
Prior art keywords
production
memory device
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69226488T
Other languages
English (en)
Other versions
DE69226488D1 (de
Inventor
Hirohito Taneda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Device Solutions Corp
Original Assignee
Toshiba Corp
Toshiba Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Microelectronics Corp filed Critical Toshiba Corp
Publication of DE69226488D1 publication Critical patent/DE69226488D1/de
Application granted granted Critical
Publication of DE69226488T2 publication Critical patent/DE69226488T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42324—Gate electrodes for transistors with a floating gate
    • H01L29/42328—Gate electrodes for transistors with a floating gate with at least one additional gate other than the floating gate and the control gate, e.g. program gate, erase gate or select gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42324—Gate electrodes for transistors with a floating gate
    • H01L29/42336—Gate electrodes for transistors with a floating gate with one gate at least partly formed in a trench
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
DE69226488T 1991-10-03 1992-10-02 Halbleiterspeicheranordnung und Verfahren zu ihrer Herstellung Expired - Fee Related DE69226488T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP03281911A JP3124334B2 (ja) 1991-10-03 1991-10-03 半導体記憶装置およびその製造方法

Publications (2)

Publication Number Publication Date
DE69226488D1 DE69226488D1 (de) 1998-09-10
DE69226488T2 true DE69226488T2 (de) 1999-01-28

Family

ID=17645675

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69226488T Expired - Fee Related DE69226488T2 (de) 1991-10-03 1992-10-02 Halbleiterspeicheranordnung und Verfahren zu ihrer Herstellung

Country Status (4)

Country Link
US (2) US5359218A (de)
EP (1) EP0535694B1 (de)
JP (1) JP3124334B2 (de)
DE (1) DE69226488T2 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2585180B2 (ja) * 1992-09-02 1997-02-26 三菱電機株式会社 半導体記憶装置およびその製造方法
US5793081A (en) * 1994-03-25 1998-08-11 Nippon Steel Corporation Nonvolatile semiconductor storage device and method of manufacturing
US5640032A (en) * 1994-09-09 1997-06-17 Nippon Steel Corporation Non-volatile semiconductor memory device with improved rewrite speed
US5675161A (en) * 1995-03-28 1997-10-07 Thomas; Mammen Channel accelerated tunneling electron cell, with a select region incorporated, for high density low power applications
JPH08274198A (ja) * 1995-03-29 1996-10-18 Lg Semicon Co Ltd Ｅｅｐｒｏｍセル及びその製造方法
US5953602A (en) * 1995-05-26 1999-09-14 Lg Semicon Co., Ltd. EEPROM cell and related method of making thereof
US5877054A (en) * 1995-06-29 1999-03-02 Sharp Kabushiki Kaisha Method of making nonvolatile semiconductor memory
EP0752721B1 (de) * 1995-06-29 2009-04-29 Sharp Kabushiki Kaisha Nichtflüchtiger Halbleiterspeicher und Verfahren zur Steuerung und Verfahren zu seiner Herstellung
JP3366173B2 (ja) * 1995-07-31 2003-01-14 シャープ株式会社 不揮発性半導体メモリの製造方法
KR100278647B1 (ko) 1996-10-05 2001-02-01 윤종용 불휘발성 메모리소자 및 그 제조방법
US6008089A (en) * 1997-12-24 1999-12-28 United Semiconductor Corp. Method of fabricating a split gate flash memory device
JP3830704B2 (ja) * 1999-12-10 2006-10-11 Ｎｅｃエレクトロニクス株式会社 半導体装置とそれを用いた不揮発性半導体記憶装置及びその製造方法
KR100368317B1 (ko) * 1999-12-28 2003-01-24 주식회사 하이닉스반도체 플래쉬 메모리 소자의 코드저장 셀
JP2001210730A (ja) 2000-01-25 2001-08-03 Oki Electric Ind Co Ltd 不揮発性半導体記憶装置の製造方法
US6700154B1 (en) * 2002-09-20 2004-03-02 Lattice Semiconductor Corporation EEPROM cell with trench coupling capacitor
KR100604850B1 (ko) * 2003-05-20 2006-07-31 삼성전자주식회사 균일하지 않은 채널 유전막 두께를 갖는 이이피롬 셀 구조및 그 제조방법
KR100825383B1 (ko) * 2006-04-24 2008-04-29 삼성에스디아이 주식회사 비휘발성 메모리 소자, 이를 제조하는 방법 및 이를포함하는 유기 전계 발광 표시 장치
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
US8847319B2 (en) 2012-03-09 2014-09-30 Taiwan Semiconductor Manufacturing Company, Ltd. Dummy structure for multiple gate dielectric interface and methods
US9362272B2 (en) 2012-11-01 2016-06-07 Taiwan Semiconductor Manufacturing Company, Ltd. Lateral MOSFET
US10269822B2 (en) * 2015-12-29 2019-04-23 Taiwan Semiconductor Manufacturing Co., Ltd. Method to fabricate uniform tunneling dielectric of embedded flash memory cell
US11257916B2 (en) * 2019-03-14 2022-02-22 Semiconductor Components Industries, Llc Electronic device having multi-thickness gate insulator

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5780779A (en) * 1980-11-07 1982-05-20 Fujitsu Ltd Semiconductor non-volatile memory
JPS5791561A (en) * 1980-11-28 1982-06-07 Fujitsu Ltd Semiconductor non-volatile memory device and manufacture therefor
GB2126788B (en) * 1982-03-09 1985-06-19 Rca Corp An electrically alterable nonvolatile floating gate memory device
US4701776A (en) * 1983-08-29 1987-10-20 Seeq Technology, Inc. MOS floating gate memory cell and process for fabricating same
FR2562707A1 (fr) * 1984-04-06 1985-10-11 Efcis Point-memoire electriquement effacable et reprogrammable, comportant une grille flottante au-dessus d'une grille de commande
US4649520A (en) * 1984-11-07 1987-03-10 Waferscale Integration Inc. Single layer polycrystalline floating gate
US4752912A (en) * 1985-05-14 1988-06-21 Xicor, Inc. Nonvolatile electrically alterable memory and method
JPS62245676A (ja) * 1986-04-18 1987-10-26 Toshiba Corp 不揮発性半導体記憶装置
US4949140A (en) * 1987-02-02 1990-08-14 Intel Corporation EEPROM cell with integral select transistor
JPS6410673A (en) * 1987-07-02 1989-01-13 Fujitsu Ltd Non volatile semiconductor memory device
JPH01128472A (ja) * 1987-11-13 1989-05-22 Toshiba Corp 半導体不揮発性記憶装置
JP2755592B2 (ja) * 1988-02-23 1998-05-20 株式会社東芝 半導体記憶装置およびその製造方法
JPH07101713B2 (ja) * 1988-06-07 1995-11-01 三菱電機株式会社 半導体記憶装置の製造方法
JP2547622B2 (ja) * 1988-08-26 1996-10-23 三菱電機株式会社 不揮発性半導体記憶装置
US4989053A (en) * 1989-03-27 1991-01-29 Shelton Everett K Nonvolatile process compatible with a digital and analog double level metal MOS process
US5017979A (en) * 1989-04-28 1991-05-21 Nippondenso Co., Ltd. EEPROM semiconductor memory device
JPH0393276A (ja) * 1989-09-05 1991-04-18 Toshiba Micro Electron Kk 半導体記憶装置及びその製造方法
US5215934A (en) * 1989-12-21 1993-06-01 Tzeng Jyh Cherng J Process for reducing program disturbance in eeprom arrays

Also Published As

Publication number Publication date
US5359218A (en) 1994-10-25
JP3124334B2 (ja) 2001-01-15
EP0535694A2 (de) 1993-04-07
DE69226488D1 (de) 1998-09-10
EP0535694A3 (en) 1993-08-11
EP0535694B1 (de) 1998-08-05
JPH05102490A (ja) 1993-04-23
US5514607A (en) 1996-05-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee