DE69839034D1 - Halbleiter-Speicher-Vorrichtung und Verfahren zu deren Herstellung - Google Patents

Halbleiter-Speicher-Vorrichtung und Verfahren zu deren Herstellung

Info

Publication number
DE69839034D1
DE69839034D1 DE69839034T DE69839034T DE69839034D1 DE 69839034 D1 DE69839034 D1 DE 69839034D1 DE 69839034 T DE69839034 T DE 69839034T DE 69839034 T DE69839034 T DE 69839034T DE 69839034 D1 DE69839034 D1 DE 69839034D1
Authority
DE
Germany
Prior art keywords
production
memory device
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69839034T
Other languages
English (en)
Other versions
DE69839034T2 (de
Inventor
Hideo Sunami
Kiyoo Itoh
Toshikazu Shimada
Kazuo Nakazato
Hiroshi Mizuta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE69839034D1 publication Critical patent/DE69839034D1/de
Publication of DE69839034T2 publication Critical patent/DE69839034T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/036—Making the capacitor or connections thereto the capacitor extending under the transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42324—Gate electrodes for transistors with a floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H10B12/053—Making the transistor the transistor being at least partially in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/33—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor extending under the transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Dram (AREA)
DE69839034T 1997-10-07 1998-09-24 Halbleiter-Speicher-Vorrichtung und Verfahren zu deren Herstellung Expired - Fee Related DE69839034T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP27409097A JP3554666B2 (ja) 1997-10-07 1997-10-07 半導体メモリ装置
JP27409097 1997-10-07

Publications (2)

Publication Number Publication Date
DE69839034D1 true DE69839034D1 (de) 2008-03-13
DE69839034T2 DE69839034T2 (de) 2009-01-15

Family

ID=17536849

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69839034T Expired - Fee Related DE69839034T2 (de) 1997-10-07 1998-09-24 Halbleiter-Speicher-Vorrichtung und Verfahren zu deren Herstellung

Country Status (8)

Country Link
EP (1) EP0908954B1 (de)
JP (1) JP3554666B2 (de)
KR (2) KR100712087B1 (de)
CN (1) CN1159765C (de)
DE (1) DE69839034T2 (de)
MY (2) MY130341A (de)
RU (1) RU2216819C2 (de)
TW (1) TW412745B (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003514399A (ja) 1999-11-15 2003-04-15 インフィネオン テクノロジーズ アクチエンゲゼルシャフト 少なくとも１つのコンデンサおよびそれに接続された少なくとも１つのトランジスタを有する回路構造
DE10122075B4 (de) * 2001-05-07 2008-05-29 Qimonda Ag Halbleiterspeicherzelle und deren Herstellungsverfahren
DE10146215A1 (de) * 2001-09-19 2003-04-10 Infineon Technologies Ag Verfahren zum Herstellen einer Halbleiterspeicherelement-Anordnung, Verfahren zum Betreiben einer Halbleiterspeicherelement-Anordnung und Halbleiterspeicherelement-Anordnung
JP4251815B2 (ja) * 2002-04-04 2009-04-08 株式会社ルネサステクノロジ 半導体記憶装置
US8611363B2 (en) 2002-05-06 2013-12-17 Adtran, Inc. Logical port system and method
JP2004241473A (ja) * 2003-02-04 2004-08-26 Renesas Technology Corp 半導体記憶装置
US7759719B2 (en) * 2004-07-01 2010-07-20 Chih-Hsin Wang Electrically alterable memory cell
JP4524735B2 (ja) 2003-06-20 2010-08-18 ルネサスエレクトロニクス株式会社 半導体記憶装置
JP4818578B2 (ja) * 2003-08-06 2011-11-16 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置およびその製造方法
KR100528484B1 (ko) * 2004-01-06 2005-11-15 삼성전자주식회사 축소 가능한 2-트랜지스터 메모리 셀들을 구비한 불휘발성 반도체 메모리 장치
KR100742758B1 (ko) * 2005-11-02 2007-07-26 경북대학교 산학협력단 플래시 메모리 소자 및 그 제조방법
KR100814374B1 (ko) * 2006-09-20 2008-03-18 삼성전자주식회사 불휘발성 메모리 장치의 제조 방법
KR100844947B1 (ko) 2007-01-16 2008-07-09 주식회사 엑셀반도체 단전자 트랜지스터를 이용한 다치 ｄｒａｍ 셀 및 다치 ｄｒａｍ 셀 어레이
KR100844946B1 (ko) 2007-01-16 2008-07-09 주식회사 엑셀반도체 단전자 트랜지스터를 이용한 다치 ｄｒａｍ 셀 및 다치 ｄｒａｍ 셀 어레이
RU2444806C2 (ru) * 2010-05-19 2012-03-10 Государственное образовательное учреждение высшего профессионального образования "Московский государственный институт электроники и математики (технический университет)" Ячейка памяти на базе тонкослойной наноструктуры
JP6030298B2 (ja) * 2010-12-28 2016-11-24 株式会社半導体エネルギー研究所 緩衝記憶装置及び信号処理回路
US8634230B2 (en) * 2011-01-28 2014-01-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
TWI570891B (zh) * 2011-05-17 2017-02-11 半導體能源研究所股份有限公司 半導體裝置
JP6100559B2 (ja) * 2012-03-05 2017-03-22 株式会社半導体エネルギー研究所 半導体記憶装置
KR101944535B1 (ko) * 2012-03-28 2019-01-31 삼성전자주식회사 반도체 기억 소자
WO2022010734A1 (en) * 2020-07-08 2022-01-13 The Penn State Research Foundation Collision detector, collision detection system, and method of using same

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6070760A (ja) * 1983-09-27 1985-04-22 Fujitsu Ltd 半導体記憶装置
JPS6177359A (ja) * 1984-09-21 1986-04-19 Fujitsu Ltd 半導体記憶装置
US4667217A (en) * 1985-04-19 1987-05-19 Ncr Corporation Two bit vertically/horizontally integrated memory cell
US5194749A (en) * 1987-11-30 1993-03-16 Hitachi, Ltd. Semiconductor integrated circuit device
US5057888A (en) * 1991-01-28 1991-10-15 Micron Technology, Inc. Double DRAM cell
EP0499824B1 (de) * 1991-01-30 1996-09-25 Texas Instruments Incorporated SRAM-Zelle mit geschichteter Kapazität
KR100388519B1 (ko) * 1995-02-22 2003-09-19 마이크론 테크놀로지, 인크. 메모리셀의커패시터배열위에비트선을형성하는방법및이를이용한집적회로및반도체메모리장치
JPH08306889A (ja) * 1995-05-08 1996-11-22 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法
KR0170680B1 (ko) * 1995-07-28 1999-02-01 윤종용 불휘발성 반도체 메모리장치의 제조방법

Also Published As

Publication number Publication date
MY117480A (en) 2004-07-31
RU2216819C2 (ru) 2003-11-20
KR20030084823A (ko) 2003-11-01
EP0908954A3 (de) 1999-07-14
KR100712089B1 (ko) 2007-05-02
TW412745B (en) 2000-11-21
DE69839034T2 (de) 2009-01-15
EP0908954B1 (de) 2008-01-23
CN1159765C (zh) 2004-07-28
JP3554666B2 (ja) 2004-08-18
MY130341A (en) 2007-06-29
JPH11111929A (ja) 1999-04-23
CN1215925A (zh) 1999-05-05
EP0908954A2 (de) 1999-04-14
KR19990036748A (ko) 1999-05-25
KR100712087B1 (ko) 2008-01-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee