DE69223539T2 - Dünnschicht-Halbleiter-Vorrichtung und Verfahren zu deren Herstellung - Google Patents

Dünnschicht-Halbleiter-Vorrichtung und Verfahren zu deren Herstellung

Info

Publication number
DE69223539T2
DE69223539T2 DE69223539T DE69223539T DE69223539T2 DE 69223539 T2 DE69223539 T2 DE 69223539T2 DE 69223539 T DE69223539 T DE 69223539T DE 69223539 T DE69223539 T DE 69223539T DE 69223539 T2 DE69223539 T2 DE 69223539T2
Authority
DE
Germany
Prior art keywords
thin
production
semiconductor device
film semiconductor
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69223539T
Other languages
English (en)
Other versions
DE69223539D1 (de
Inventor
Masato Yamanobe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69223539D1 publication Critical patent/DE69223539D1/de
Publication of DE69223539T2 publication Critical patent/DE69223539T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
    • H01L31/03682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
    • H01L31/1136—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/15—Silicon on sapphire SOS
DE69223539T 1991-03-27 1992-03-26 Dünnschicht-Halbleiter-Vorrichtung und Verfahren zu deren Herstellung Expired - Fee Related DE69223539T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3085752A JPH04299578A (ja) 1991-03-27 1991-03-27 光電変換素子及び薄膜半導体装置

Publications (2)

Publication Number Publication Date
DE69223539D1 DE69223539D1 (de) 1998-01-29
DE69223539T2 true DE69223539T2 (de) 1998-04-16

Family

ID=13867592

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69223539T Expired - Fee Related DE69223539T2 (de) 1991-03-27 1992-03-26 Dünnschicht-Halbleiter-Vorrichtung und Verfahren zu deren Herstellung

Country Status (5)

Country Link
US (3) US5184200A (de)
EP (1) EP0506378B1 (de)
JP (1) JPH04299578A (de)
CA (1) CA2063964C (de)
DE (1) DE69223539T2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04299578A (ja) * 1991-03-27 1992-10-22 Canon Inc 光電変換素子及び薄膜半導体装置
US5567956A (en) * 1991-03-27 1996-10-22 Canon Kabushiki Kaisha Information processing apparatus including a photoelectric conversion element having a semiconductor layer with a varying energy band gap width
JPH05198795A (ja) * 1991-08-21 1993-08-06 Ricoh Co Ltd ＭＩＳ型半導体素子用ＰｏｌｙＳｉゲート電極
JP2530990B2 (ja) * 1992-10-15 1996-09-04 富士通株式会社 薄膜トランジスタ・マトリクスの製造方法
JPH0878719A (ja) * 1994-09-01 1996-03-22 Nec Corp 光電変換素子
US5885884A (en) * 1995-09-29 1999-03-23 Intel Corporation Process for fabricating a microcrystalline silicon structure
US6329270B1 (en) * 1997-03-07 2001-12-11 Sharp Laboratories Of America, Inc. Laser annealed microcrystalline film and method for same
EP1056139A3 (de) * 1999-05-28 2007-09-19 Sharp Kabushiki Kaisha Photoelektrische Umwandlungsvorrichtung und Herstellungsverfahren
EP1118126B1 (de) * 1999-08-02 2009-02-25 Casio Computer Co., Ltd. Photosensor und photosensorsystem
TWI234288B (en) 2004-07-27 2005-06-11 Au Optronics Corp Method for fabricating a thin film transistor and related circuits
CN1328768C (zh) * 2004-08-27 2007-07-25 友达光电股份有限公司 薄膜晶体管及其电路的制作方法
TWI452703B (zh) * 2007-11-16 2014-09-11 Semiconductor Energy Lab 光電轉換裝置及其製造方法
US9299863B2 (en) * 2008-05-07 2016-03-29 The Hong Kong University Of Science And Technology Ultrathin film multi-crystalline photovoltaic device
KR101699399B1 (ko) * 2010-08-12 2017-01-25 삼성디스플레이 주식회사 가시광선 감지 트랜지스터, 표시 장치 및 그 제조 방법
JP2013058562A (ja) 2011-09-07 2013-03-28 Semiconductor Energy Lab Co Ltd 光電変換装置

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56122123A (en) * 1980-03-03 1981-09-25 Shunpei Yamazaki Semiamorphous semiconductor
JPS5767020A (en) * 1980-10-15 1982-04-23 Agency Of Ind Science & Technol Thin silicon film and its manufacture
DE3146981A1 (de) * 1981-11-26 1983-06-01 Siemens AG, 1000 Berlin und 8000 München Fototransistor in mos-duennschichttechnik, verfahren zu seiner herstellung und verfahren zu seinem betrieb.
DE3300400A1 (de) * 1982-01-06 1983-07-14 Canon K.K., Tokyo Halbleiterbauelement
JPH0658966B2 (ja) * 1982-05-17 1994-08-03 キヤノン株式会社 半導体素子
JPS59139682A (ja) * 1983-01-31 1984-08-10 Ricoh Co Ltd 光導電性薄膜
JPS59188965A (ja) * 1983-04-11 1984-10-26 Fuji Xerox Co Ltd 原稿読取素子
US4642144A (en) * 1983-10-06 1987-02-10 Exxon Research And Engineering Company Proximity doping of amorphous semiconductors
US4762806A (en) * 1983-12-23 1988-08-09 Sharp Kabushiki Kaisha Process for producing a SiC semiconductor device
JPS6126365A (ja) * 1984-07-17 1986-02-05 Canon Inc 画像読取装置
JPS61142779A (ja) * 1984-12-17 1986-06-30 Hitachi Ltd 薄膜材料
JPS61214476A (ja) * 1985-03-19 1986-09-24 Agency Of Ind Science & Technol 薄膜トランジスタ
JPH07120765B2 (ja) * 1985-12-20 1995-12-20 キヤノン株式会社 センサ装置、光導電型センサの駆動方法及び駆動装置
JPH0744277B2 (ja) * 1986-10-31 1995-05-15 富士通株式会社 薄膜トランジスタ及びその形成方法
JPS63258078A (ja) * 1987-04-15 1988-10-25 Mitsubishi Electric Corp 非晶質光電変換装置
JPH01244664A (ja) * 1988-03-25 1989-09-29 Sanyo Electric Co Ltd 薄膜トランジスタ
JPH01296611A (ja) * 1988-05-25 1989-11-30 Canon Inc 半導体薄膜堆積法
JPH01302768A (ja) * 1988-05-30 1989-12-06 Seikosha Co Ltd 逆スタガー型シリコン薄膜トランジスタ
JPH06105691B2 (ja) * 1988-09-29 1994-12-21 株式会社富士電機総合研究所 炭素添加非晶質シリコン薄膜の製造方法
EP0361481B1 (de) * 1988-09-30 1995-04-05 Kanegafuchi Chemical Industry Co., Ltd. Verfahren zum Stabilisieren von amorphen Halbleitern
US4951113A (en) * 1988-11-07 1990-08-21 Xerox Corporation Simultaneously deposited thin film CMOS TFTs and their method of fabrication
US5002618A (en) * 1989-01-21 1991-03-26 Canon Kabushiki Kaisha Pin heterojunction photovoltaic elements with polycrystal BAs(H,F) semiconductor film
JPH04299578A (ja) * 1991-03-27 1992-10-22 Canon Inc 光電変換素子及び薄膜半導体装置

Also Published As

Publication number Publication date
US5184200A (en) 1993-02-02
US6140666A (en) 2000-10-31
CA2063964A1 (en) 1992-09-28
US5352614A (en) 1994-10-04
EP0506378B1 (de) 1997-12-17
CA2063964C (en) 1998-10-20
JPH04299578A (ja) 1992-10-22
EP0506378A1 (de) 1992-09-30
DE69223539D1 (de) 1998-01-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee