DE69634764D1 - Halbleiteranordnung und Verfahren zu ihrer Herstellung - Google Patents
Halbleiteranordnung und Verfahren zu ihrer HerstellungInfo
- Publication number
- DE69634764D1 DE69634764D1 DE69634764T DE69634764T DE69634764D1 DE 69634764 D1 DE69634764 D1 DE 69634764D1 DE 69634764 T DE69634764 T DE 69634764T DE 69634764 T DE69634764 T DE 69634764T DE 69634764 D1 DE69634764 D1 DE 69634764D1
- Authority
- DE
- Germany
- Prior art keywords
- production
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Memories (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19218195 | 1995-07-27 | ||
JP19218195 | 1995-07-27 | ||
JP7330112A JPH09172063A (ja) | 1995-12-19 | 1995-12-19 | 半導体装置及びその製造方法 |
JP33011295 | 1995-12-19 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69634764D1 true DE69634764D1 (de) | 2005-06-30 |
DE69634764T2 DE69634764T2 (de) | 2005-11-17 |
Family
ID=26507160
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69637701T Expired - Lifetime DE69637701D1 (de) | 1995-07-27 | 1996-07-26 | Halbleitervorrichtung und Verfahren zu ihrer Herstellung |
DE69634764T Expired - Lifetime DE69634764T2 (de) | 1995-07-27 | 1996-07-26 | Halbleiteranordnung und Verfahren zu ihrer Herstellung |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69637701T Expired - Lifetime DE69637701D1 (de) | 1995-07-27 | 1996-07-26 | Halbleitervorrichtung und Verfahren zu ihrer Herstellung |
Country Status (4)
Country | Link |
---|---|
US (5) | US6281562B1 (de) |
EP (2) | EP0756320B1 (de) |
KR (1) | KR100403009B1 (de) |
DE (2) | DE69637701D1 (de) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6281562B1 (en) * | 1995-07-27 | 2001-08-28 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device which reduces the minimum distance requirements between active areas |
US20030170964A1 (en) * | 1996-10-02 | 2003-09-11 | Micron Technology, Inc. | Oxidation of ion implanted semiconductors |
US5913124A (en) * | 1997-05-24 | 1999-06-15 | United Microelectronics Corporation | Method of making a self-aligned silicide |
JP2000223569A (ja) * | 1999-02-03 | 2000-08-11 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
KR100307631B1 (ko) * | 1999-06-01 | 2001-09-29 | 윤종용 | 반도체소자의 미세패턴 형성방법 |
US20010053572A1 (en) * | 2000-02-23 | 2001-12-20 | Yoshinari Ichihashi | Semiconductor device having opening and method of fabricating the same |
FR2807206A1 (fr) * | 2000-03-31 | 2001-10-05 | St Microelectronics Sa | Transistor mos dans un circuit integre et procede de formation de zone active |
US6524912B1 (en) * | 2000-08-31 | 2003-02-25 | Micron Technology, Inc. | Planarization of metal container structures |
US6551901B1 (en) * | 2001-08-21 | 2003-04-22 | Lsi Logic Corporation | Method for preventing borderless contact to well leakage |
US7098515B1 (en) | 2001-08-21 | 2006-08-29 | Lsi Logic Corporation | Semiconductor chip with borderless contact that avoids well leakage |
KR100525797B1 (ko) * | 2003-06-18 | 2005-11-02 | 동부아남반도체 주식회사 | 소자분리막 구조 및 제조 방법 |
KR100549010B1 (ko) * | 2004-06-17 | 2006-02-02 | 삼성전자주식회사 | 채널부 홀의 일 측벽에 채널 영역을 갖는 트랜지스터의형성방법들 |
JP4345794B2 (ja) * | 2006-09-28 | 2009-10-14 | ソニー株式会社 | 固体撮像素子の製造方法 |
JP2010147247A (ja) * | 2008-12-18 | 2010-07-01 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
US8154006B2 (en) * | 2008-12-29 | 2012-04-10 | Micron Technology, Inc. | Controlling the circuitry and memory array relative height in a phase change memory feol process flow |
JP5325125B2 (ja) | 2010-01-07 | 2013-10-23 | パナソニック株式会社 | 半導体装置 |
KR20110100738A (ko) * | 2010-03-05 | 2011-09-15 | 삼성전자주식회사 | 반도체 메모리 장치 및 그 제조 방법 |
US8455952B2 (en) * | 2010-11-22 | 2013-06-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Spacer elements for semiconductor device |
JP2012142560A (ja) * | 2010-12-15 | 2012-07-26 | Canon Inc | 固体撮像装置およびその製造方法ならびにカメラ |
TWI657580B (zh) | 2011-01-26 | 2019-04-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
KR101209474B1 (ko) | 2011-04-13 | 2012-12-07 | 앰코 테크놀로지 코리아 주식회사 | 반도체 장치의 관통 실리콘 비아 형성 방법 |
US9431545B2 (en) * | 2011-09-23 | 2016-08-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US8637864B2 (en) | 2011-10-13 | 2014-01-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
JP5912394B2 (ja) | 2011-10-13 | 2016-04-27 | 株式会社半導体エネルギー研究所 | 半導体装置 |
TWI669760B (zh) | 2011-11-30 | 2019-08-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置的製造方法 |
CN103928333B (zh) * | 2013-01-15 | 2019-03-12 | 中国科学院微电子研究所 | 半导体器件及其制造方法 |
US9515172B2 (en) * | 2014-01-28 | 2016-12-06 | Samsung Electronics Co., Ltd. | Semiconductor devices having isolation insulating layers and methods of manufacturing the same |
US9874693B2 (en) * | 2015-06-10 | 2018-01-23 | The Research Foundation For The State University Of New York | Method and structure for integrating photonics with CMOs |
Family Cites Families (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59181062A (ja) | 1983-03-31 | 1984-10-15 | Toshiba Corp | Mos型半導体装置の製造方法 |
US4578128A (en) * | 1984-12-03 | 1986-03-25 | Ncr Corporation | Process for forming retrograde dopant distributions utilizing simultaneous outdiffusion of dopants |
JPS6285461A (ja) | 1985-10-09 | 1987-04-18 | Sony Corp | 半導体装置の製法 |
FR2593238B1 (fr) | 1986-01-22 | 1990-11-02 | Europ Propulsion | Chambre de combustion de propulseur et son procede d'assemblage |
NL8600770A (nl) | 1986-03-26 | 1987-10-16 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting. |
US4884123A (en) * | 1987-02-19 | 1989-11-28 | Advanced Micro Devices, Inc. | Contact plug and interconnect employing a barrier lining and a backfilled conductor material |
US5196910A (en) * | 1987-04-24 | 1993-03-23 | Hitachi, Ltd. | Semiconductor memory device with recessed array region |
US5235199A (en) * | 1988-03-25 | 1993-08-10 | Kabushiki Kaisha Toshiba | Semiconductor memory with pad electrode and bit line under stacked capacitor |
US4966870A (en) * | 1988-04-14 | 1990-10-30 | International Business Machines Corporation | Method for making borderless contacts |
JPH0379033A (ja) | 1989-08-22 | 1991-04-04 | Sony Corp | 半導体装置の製法 |
JPH07105458B2 (ja) * | 1989-11-21 | 1995-11-13 | 株式会社東芝 | 複合型集積回路素子 |
JPH0448647A (ja) | 1990-06-13 | 1992-02-18 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH0468564A (ja) * | 1990-07-10 | 1992-03-04 | Sony Corp | 半導体装置の製法 |
JPH04305922A (ja) | 1991-04-02 | 1992-10-28 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JPH05109762A (ja) | 1991-05-16 | 1993-04-30 | Internatl Business Mach Corp <Ibm> | 半導体装置及びその製造方法 |
US5177028A (en) | 1991-10-22 | 1993-01-05 | Micron Technology, Inc. | Trench isolation method having a double polysilicon gate formed on mesas |
JP3277383B2 (ja) | 1992-02-28 | 2002-04-22 | ソニー株式会社 | 半導体装置の製造方法 |
US5286674A (en) | 1992-03-02 | 1994-02-15 | Motorola, Inc. | Method for forming a via structure and semiconductor device having the same |
US5229316A (en) | 1992-04-16 | 1993-07-20 | Micron Technology, Inc. | Semiconductor processing method for forming substrate isolation trenches |
US5310692A (en) | 1992-05-29 | 1994-05-10 | Sgs-Thomson Microelectronics, Inc. | Method of forming a MOSFET structure with planar surface |
JPH0685204A (ja) | 1992-09-02 | 1994-03-25 | Fujitsu Ltd | 半導体装置の製造方法 |
US5393708A (en) * | 1992-10-08 | 1995-02-28 | Industrial Technology Research Institute | Inter-metal-dielectric planarization process |
JP2925416B2 (ja) | 1992-11-09 | 1999-07-28 | 株式会社東芝 | 半導体集積回路装置の製造方法 |
KR960002064B1 (ko) | 1992-11-16 | 1996-02-10 | 현대전자산업주식회사 | 반도체 소자의 콘택 제조방법 |
JPH06163843A (ja) | 1992-11-18 | 1994-06-10 | Hitachi Ltd | 半導体装置の製造方法 |
US5433794A (en) * | 1992-12-10 | 1995-07-18 | Micron Technology, Inc. | Spacers used to form isolation trenches with improved corners |
US5384281A (en) * | 1992-12-29 | 1995-01-24 | International Business Machines Corporation | Non-conformal and oxidizable etch stops for submicron features |
US5364813A (en) * | 1993-09-01 | 1994-11-15 | Industrial Technology Research Institute | Stacked DRAM poly plate capacitor |
JP3238551B2 (ja) | 1993-11-19 | 2001-12-17 | 沖電気工業株式会社 | 電界効果型トランジスタの製造方法 |
JPH07153939A (ja) | 1993-11-29 | 1995-06-16 | Oki Electric Ind Co Ltd | 半導体素子およびその製造方法 |
JPH07273330A (ja) | 1994-03-31 | 1995-10-20 | Toshiba Corp | 半導体装置及びその製造方法 |
TW295695B (de) * | 1994-09-19 | 1997-01-11 | Motorola Inc | |
US5521422A (en) * | 1994-12-02 | 1996-05-28 | International Business Machines Corporation | Corner protected shallow trench isolation device |
US5539229A (en) * | 1994-12-28 | 1996-07-23 | International Business Machines Corporation | MOSFET with raised STI isolation self-aligned to the gate stack |
US5648673A (en) * | 1994-12-28 | 1997-07-15 | Nippon Steel Corporation | Semiconductor device having metal silicide film on impurity diffused layer or conductive layer |
JPH08196495A (ja) | 1995-01-27 | 1996-08-06 | Hitachi Ltd | 電気掃除機 |
JP3022744B2 (ja) * | 1995-02-21 | 2000-03-21 | 日本電気株式会社 | 半導体装置及びその製造方法 |
US6077344A (en) * | 1997-09-02 | 2000-06-20 | Lockheed Martin Energy Research Corporation | Sol-gel deposition of buffer layers on biaxially textured metal substances |
US6281562B1 (en) * | 1995-07-27 | 2001-08-28 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device which reduces the minimum distance requirements between active areas |
EP0960628B1 (de) * | 1995-09-08 | 2004-11-10 | Koichi Yoshino | Als ampulle dienende spritze und spritze zur blutentnahme |
JPH09162392A (ja) | 1995-12-06 | 1997-06-20 | Toshiba Corp | 半導体装置 |
US5777370A (en) * | 1996-06-12 | 1998-07-07 | Advanced Micro Devices, Inc. | Trench isolation of field effect transistors |
US5817562A (en) * | 1997-01-24 | 1998-10-06 | Taiwan Semiconductor Manufacturing Company, Ltd | Method for making improved polysilicon FET gate electrode structures and sidewall spacers for more reliable self-aligned contacts (SAC) |
US6278138B1 (en) * | 1998-08-28 | 2001-08-21 | Sony Corporation | Silicon-based functional matrix substrate and optical integrated oxide device |
-
1996
- 1996-07-24 US US08/685,726 patent/US6281562B1/en not_active Expired - Lifetime
- 1996-07-26 DE DE69637701T patent/DE69637701D1/de not_active Expired - Lifetime
- 1996-07-26 EP EP96112122A patent/EP0756320B1/de not_active Expired - Lifetime
- 1996-07-26 DE DE69634764T patent/DE69634764T2/de not_active Expired - Lifetime
- 1996-07-26 KR KR1019960030658A patent/KR100403009B1/ko not_active IP Right Cessation
- 1996-07-26 EP EP04025951A patent/EP1503410B1/de not_active Expired - Lifetime
-
2001
- 2001-07-11 US US09/902,157 patent/US6709950B2/en not_active Expired - Lifetime
-
2003
- 2003-06-05 US US10/454,682 patent/US6967409B2/en not_active Expired - Fee Related
-
2004
- 2004-11-24 US US10/995,283 patent/US7126174B2/en not_active Expired - Fee Related
-
2005
- 2005-03-17 US US11/081,679 patent/US20050156220A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US6967409B2 (en) | 2005-11-22 |
EP0756320A3 (de) | 1998-04-01 |
US7126174B2 (en) | 2006-10-24 |
US6709950B2 (en) | 2004-03-23 |
EP1503410B1 (de) | 2008-10-01 |
EP0756320B1 (de) | 2005-05-25 |
DE69634764T2 (de) | 2005-11-17 |
US20030205820A1 (en) | 2003-11-06 |
US20050156220A1 (en) | 2005-07-21 |
DE69637701D1 (de) | 2008-11-13 |
US20050093089A1 (en) | 2005-05-05 |
US20010054741A1 (en) | 2001-12-27 |
KR100403009B1 (ko) | 2004-01-07 |
EP0756320A2 (de) | 1997-01-29 |
US6281562B1 (en) | 2001-08-28 |
EP1503410A1 (de) | 2005-02-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: PANASONIC CORP., KADOMA, OSAKA, JP |