DE69033959T2 - Halbleiterlaser-Vorrichtung und Verfahren zu ihrer Herstellung - Google Patents

Halbleiterlaser-Vorrichtung und Verfahren zu ihrer Herstellung

Info

Publication number
DE69033959T2
DE69033959T2 DE1990633959 DE69033959T DE69033959T2 DE 69033959 T2 DE69033959 T2 DE 69033959T2 DE 1990633959 DE1990633959 DE 1990633959 DE 69033959 T DE69033959 T DE 69033959T DE 69033959 T2 DE69033959 T2 DE 69033959T2
Authority
DE
Germany
Prior art keywords
manufacture
semiconductor laser
laser device
semiconductor
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE1990633959
Other languages
English (en)
Other versions
DE69033959D1 (de
Inventor
Hidenori Kawanishi
Taiji Morimoto
Shinji Kaneiwa
Hiroshi Hayashi
Nobuyuki Miyauchi
Seiki Yano
Mitsuhiro Matsumoto
Kazuaki Sasaki
Masaki Kondo
Takehiro Shiomoto
Saburo Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1289705A external-priority patent/JP2659830B2/ja
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of DE69033959D1 publication Critical patent/DE69033959D1/de
Application granted granted Critical
Publication of DE69033959T2 publication Critical patent/DE69033959T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0281—Coatings made of semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0282—Passivation layers or treatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0282—Passivation layers or treatments
    • H01S5/0283—Optically inactive coating on the facet, e.g. half-wave coating

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE1990633959 1989-02-03 1990-02-02 Halbleiterlaser-Vorrichtung und Verfahren zu ihrer Herstellung Expired - Lifetime DE69033959T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2641489 1989-02-03
JP1289705A JP2659830B2 (ja) 1989-11-06 1989-11-06 半導体レーザ素子及びその製造方法
JP34189089 1989-12-29

Publications (2)

Publication Number Publication Date
DE69033959D1 DE69033959D1 (de) 2002-06-13
DE69033959T2 true DE69033959T2 (de) 2002-10-31

Family

ID=27285391

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1990633959 Expired - Lifetime DE69033959T2 (de) 1989-02-03 1990-02-02 Halbleiterlaser-Vorrichtung und Verfahren zu ihrer Herstellung

Country Status (2)

Country Link
EP (1) EP0381521B1 (de)
DE (1) DE69033959T2 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE68915763T2 (de) * 1989-09-07 1994-12-08 Ibm Verfahren zur Spiegelpassivierung bei Halbleiterlaserdioden.
JP2680917B2 (ja) * 1990-08-01 1997-11-19 シャープ株式会社 半導体レーザ素子の製造方法
EP0474952B1 (de) * 1990-09-14 1994-06-01 International Business Machines Corporation Methode zur Passivierung von geätzten Spiegelfacetten von Halbleiterlasern

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3849738A (en) * 1973-04-05 1974-11-19 Bell Telephone Labor Inc Multilayer antireflection coatings for solid state lasers
JPS5939082A (ja) * 1982-08-26 1984-03-03 Sanyo Electric Co Ltd 半導体レ−ザ
JPS62226685A (ja) * 1986-03-28 1987-10-05 Furukawa Electric Co Ltd:The プラズマ保護膜付半導体レ−ザ及びその製造方法
JPS6344788A (ja) * 1986-08-12 1988-02-25 Matsushita Electric Ind Co Ltd 半導体レ−ザ装置の製造方法

Also Published As

Publication number Publication date
EP0381521A2 (de) 1990-08-08
EP0381521A3 (de) 1991-06-19
DE69033959D1 (de) 2002-06-13
EP0381521B1 (de) 2002-05-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition