DE69110726T2 - Verfahren zur Herstellung eines Halbleiterlasers. - Google Patents

Verfahren zur Herstellung eines Halbleiterlasers.

Info

Publication number
DE69110726T2
DE69110726T2 DE69110726T DE69110726T DE69110726T2 DE 69110726 T2 DE69110726 T2 DE 69110726T2 DE 69110726 T DE69110726 T DE 69110726T DE 69110726 T DE69110726 T DE 69110726T DE 69110726 T2 DE69110726 T2 DE 69110726T2
Authority
DE
Germany
Prior art keywords
manufacturing
semiconductor laser
laser
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69110726T
Other languages
English (en)
Other versions
DE69110726D1 (de
Inventor
Osamu Yamamoto
Hidenori Kawanishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of DE69110726D1 publication Critical patent/DE69110726D1/de
Application granted granted Critical
Publication of DE69110726T2 publication Critical patent/DE69110726T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/164—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising semiconductor material with a wider bandgap than the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0281—Coatings made of semiconductor materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/072—Heterojunctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/095—Laser devices

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)
DE69110726T 1990-04-02 1991-04-02 Verfahren zur Herstellung eines Halbleiterlasers. Expired - Fee Related DE69110726T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2087714A JPH0834337B2 (ja) 1990-04-02 1990-04-02 半導体レーザ素子の製造方法

Publications (2)

Publication Number Publication Date
DE69110726D1 DE69110726D1 (de) 1995-08-03
DE69110726T2 true DE69110726T2 (de) 1996-07-18

Family

ID=13922572

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69110726T Expired - Fee Related DE69110726T2 (de) 1990-04-02 1991-04-02 Verfahren zur Herstellung eines Halbleiterlasers.

Country Status (4)

Country Link
US (1) US5180685A (de)
EP (1) EP0450902B1 (de)
JP (1) JPH0834337B2 (de)
DE (1) DE69110726T2 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5260231A (en) * 1989-02-03 1993-11-09 Sharp Kabushiki Kaisha Method for the production of a semiconductor laser
US5413956A (en) * 1992-03-04 1995-05-09 Sharp Kabushiki Kaisha Method for producing a semiconductor laser device
JPH0983061A (ja) * 1995-09-08 1997-03-28 Sharp Corp 半導体レーザ素子の製造方法および半導体レーザ素子製造装置
DE19536434C2 (de) * 1995-09-29 2001-11-15 Siemens Ag Verfahren zum Herstellen eines Halbleiterlaser-Bauelements
JPH09298339A (ja) * 1996-04-30 1997-11-18 Rohm Co Ltd 半導体レーザの製法
US5668049A (en) * 1996-07-31 1997-09-16 Lucent Technologies Inc. Method of making a GaAs-based laser comprising a facet coating with gas phase sulphur
JPH10242557A (ja) * 1997-02-21 1998-09-11 Sony Corp 半導体発光装置の製造方法
JP3444536B2 (ja) * 1999-10-25 2003-09-08 松下電器産業株式会社 半導体レーザー素子の製造方法および劈開装置
JP2003023209A (ja) * 2001-07-06 2003-01-24 Furukawa Electric Co Ltd:The 半導体素子の製造方法および半導体素子
JP4451371B2 (ja) * 2004-12-20 2010-04-14 シャープ株式会社 窒化物半導体レーザ素子
DE102011054954A1 (de) 2011-10-31 2013-05-02 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronischer Halbleiterlaser
EP3414609A4 (de) * 2016-02-08 2020-02-19 Skorpios Technologies, Inc. Optischer hochgeschwindigkeitssender mit einem siliciumsubstrat
US10732349B2 (en) 2016-02-08 2020-08-04 Skorpios Technologies, Inc. Broadband back mirror for a III-V chip in silicon photonics
US10608412B2 (en) * 2017-06-19 2020-03-31 Sumitomo Electric Industries, Ltd. Quantum cascade laser, light emitting apparatus
JP6939119B2 (ja) * 2017-06-19 2021-09-22 住友電気工業株式会社 量子カスケード半導体レーザ、発光装置、半導体レーザを作製する方法
JP6939120B2 (ja) * 2017-06-19 2021-09-22 住友電気工業株式会社 量子カスケード半導体レーザ、発光装置、半導体レーザを作製する方法
JP6911567B2 (ja) 2017-06-22 2021-07-28 住友電気工業株式会社 量子カスケード半導体レーザ
US10404038B2 (en) * 2017-06-22 2019-09-03 Sumitomo Electric Industries, Ltd. Quantum cascade laser
US10476237B2 (en) * 2017-06-22 2019-11-12 Sumitomo Electric Industries, Ltd. Quantum cascade laser
US10476235B2 (en) * 2017-06-22 2019-11-12 Sumitomo Electric Industries, Ltd. Quantum cascade laser

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5527474A (en) * 1978-08-19 1980-02-27 Arata Kogyosho:Kk Manufacture of spherical head for use of oiler or the like of diesel engine
JPS5766688A (en) * 1980-10-14 1982-04-22 Fujitsu Ltd Manufacture of semiconductor laser element
JPS57170585A (en) * 1981-04-14 1982-10-20 Nec Corp Semiconductor laser device
JPS5844787A (ja) * 1981-09-11 1983-03-15 Sanyo Electric Co Ltd 半導体レ−ザ
US4751708A (en) * 1982-03-29 1988-06-14 International Business Machines Corporation Semiconductor injection lasers
JPS59121989A (ja) * 1982-12-28 1984-07-14 Nec Corp 半導体レ−ザ
JPS59181082A (ja) * 1983-03-30 1984-10-15 Nec Corp 半導体レ−ザとその製造方法
JPS59219975A (ja) * 1983-05-27 1984-12-11 Matsushita Electric Ind Co Ltd 半導体レ−ザの劈開方法
JPS603182A (ja) * 1983-06-21 1985-01-09 Mitsubishi Electric Corp 半導体レ−ザ素子の製造方法
JPS60113983A (ja) * 1983-11-26 1985-06-20 Mitsubishi Electric Corp 半導体発光装置およびその製造方法
JPS6177385A (ja) * 1984-09-25 1986-04-19 Fujitsu Ltd 光半導体装置の製造方法
JPS61265888A (ja) * 1985-05-20 1986-11-25 Nec Corp 半導体レ−ザの製造方法
JPS61267388A (ja) * 1985-05-21 1986-11-26 Nec Corp 半導体レ−ザの共振器の作成方法
JPH0716077B2 (ja) * 1985-10-11 1995-02-22 三菱電機株式会社 半導体レーザ装置の製造方法
JPS62238678A (ja) * 1986-04-09 1987-10-19 Fujitsu Ltd 半導体発光装置
JPS62291194A (ja) * 1986-06-11 1987-12-17 Nec Corp 半導体レ−ザ素子の製造方法
JPS6433987A (en) * 1987-07-29 1989-02-03 Nec Corp Semiconductor laser device
JPH01227485A (ja) * 1988-03-07 1989-09-11 Mitsubishi Electric Corp 半導体レーザ装置
JPH07109924B2 (ja) * 1989-03-13 1995-11-22 シャープ株式会社 半導体レーザ装置及びその製造方法

Also Published As

Publication number Publication date
JPH03285380A (ja) 1991-12-16
EP0450902A2 (de) 1991-10-09
DE69110726D1 (de) 1995-08-03
EP0450902B1 (de) 1995-06-28
JPH0834337B2 (ja) 1996-03-29
EP0450902A3 (en) 1992-02-12
US5180685A (en) 1993-01-19

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Legal Events

Date Code Title Description
8332 No legal effect for de
8370 Indication of lapse of patent is to be deleted
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: PATENTANWAELTE MUELLER & HOFFMANN, 81667 MUENCHEN

8339 Ceased/non-payment of the annual fee