DE69120907T2 - Oberflächenemittierender Laser für sichtbares Licht - Google Patents

Oberflächenemittierender Laser für sichtbares Licht

Info

Publication number
DE69120907T2
DE69120907T2 DE69120907T DE69120907T DE69120907T2 DE 69120907 T2 DE69120907 T2 DE 69120907T2 DE 69120907 T DE69120907 T DE 69120907T DE 69120907 T DE69120907 T DE 69120907T DE 69120907 T2 DE69120907 T2 DE 69120907T2
Authority
DE
Germany
Prior art keywords
visible light
emitting laser
surface emitting
laser
visible
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69120907T
Other languages
English (en)
Other versions
DE69120907D1 (de
Inventor
Satoshi Arimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of DE69120907D1 publication Critical patent/DE69120907D1/de
Publication of DE69120907T2 publication Critical patent/DE69120907T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34326—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on InGa(Al)P, e.g. red laser
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
    • H01S2301/166—Single transverse or lateral mode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0207—Substrates having a special shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H01S5/2072—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by vacancy induced diffusion

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
DE69120907T 1990-11-28 1991-10-16 Oberflächenemittierender Laser für sichtbares Licht Expired - Fee Related DE69120907T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2335831A JPH04199589A (ja) 1990-11-28 1990-11-28 可視光面発光レーザ装置

Publications (2)

Publication Number Publication Date
DE69120907D1 DE69120907D1 (de) 1996-08-22
DE69120907T2 true DE69120907T2 (de) 1997-02-20

Family

ID=18292894

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69120907T Expired - Fee Related DE69120907T2 (de) 1990-11-28 1991-10-16 Oberflächenemittierender Laser für sichtbares Licht

Country Status (4)

Country Link
US (1) US5166945A (de)
EP (1) EP0488510B1 (de)
JP (1) JPH04199589A (de)
DE (1) DE69120907T2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3123136B2 (ja) * 1991-08-26 2001-01-09 日本電気株式会社 面発光型半導体レーザとそのアレー及び面発光型発光ダイオードとそのアレー及び面発光型ｐｎｐｎ素子
US5212705A (en) * 1992-02-18 1993-05-18 Eastman Kodak Company AlAS Zn-stop diffusion layer in AlGaAs laser diodes
US5492607A (en) * 1993-02-17 1996-02-20 Hughes Aircraft Company Method of fabricating a surface emitting laser with large area deflecting mirror
GB2283612B (en) * 1993-10-27 1997-07-30 Toshiba Cambridge Res Center Semiconductor laser device
JP3098371B2 (ja) * 1993-12-27 2000-10-16 日本電気株式会社 半導体結晶成長方法
JPH08307001A (ja) * 1995-04-28 1996-11-22 Mitsubishi Electric Corp 半導体レ−ザダイオ−ドおよびその製造方法
DE19523267A1 (de) * 1995-06-27 1997-01-02 Bosch Gmbh Robert Lasermodul
US20060029120A1 (en) * 2000-03-06 2006-02-09 Novalux Inc. Coupled cavity high power semiconductor laser
US7322704B2 (en) 2004-07-30 2008-01-29 Novalux, Inc. Frequency stabilized vertical extended cavity surface emitting lasers
JP2007049088A (ja) * 2005-08-12 2007-02-22 Rohm Co Ltd 高出力赤色半導体レーザ
JP2007234747A (ja) * 2006-02-28 2007-09-13 Matsushita Electric Ind Co Ltd 半導体レーザ装置
EP2054980B1 (de) 2006-08-23 2013-01-09 Ricoh Company, Ltd. Oberflächenemssions-laserarray, optische abtasteinrichtung und bilderzeugungseinrichtung

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7901122A (nl) * 1979-02-13 1980-08-15 Philips Nv Halfgeleiderlaser en werkwijze ter vervaardiging daarvan.
JPS58223394A (ja) * 1982-06-22 1983-12-24 Sumitomo Electric Ind Ltd 面発光型半導体レ−ザ装置及び製造方法
JPH0740619B2 (ja) * 1985-10-14 1995-05-01 松下電器産業株式会社 半導体レ−ザ装置
CA1271550A (en) * 1985-12-24 1990-07-10 Fumio Inaba Semiconductor light emitting device with vertical light emission
JPS6376390A (ja) * 1986-09-18 1988-04-06 Nec Corp 発光半導体素子
JPS63104493A (ja) * 1986-10-22 1988-05-09 Nec Corp 半導体レ−ザ素子
JPH01108789A (ja) * 1987-10-21 1989-04-26 Sharp Corp 面発光半導体レーザ素子
JPH0727873B2 (ja) * 1987-11-04 1995-03-29 三菱電機株式会社 化合物半導体へのＳｉ拡散方法
JPH0828554B2 (ja) * 1989-10-20 1996-03-21 三菱電機株式会社 半導体レーザ及びその製造方法

Also Published As

Publication number Publication date
DE69120907D1 (de) 1996-08-22
EP0488510B1 (de) 1996-07-17
JPH04199589A (ja) 1992-07-20
EP0488510A2 (de) 1992-06-03
US5166945A (en) 1992-11-24
EP0488510A3 (en) 1992-07-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee