JP4451371B2 - 窒化物半導体レーザ素子 - Google Patents
窒化物半導体レーザ素子 Download PDFInfo
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- JP4451371B2 JP4451371B2 JP2005298361A JP2005298361A JP4451371B2 JP 4451371 B2 JP4451371 B2 JP 4451371B2 JP 2005298361 A JP2005298361 A JP 2005298361A JP 2005298361 A JP2005298361 A JP 2005298361A JP 4451371 B2 JP4451371 B2 JP 4451371B2
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- nitride semiconductor
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- adhesion layer
- semiconductor laser
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/0014—Measuring characteristics or properties thereof
- H01S5/0021—Degradation or life time measurements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
- H01S5/0281—Coatings made of semiconductor materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
- H01S5/0282—Passivation layers or treatments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
Description
膜116)を順次成膜する。単層のSiO2の厚さは反射率が5%になるように3λ/4n(λ:発振波長、n:屈折率)付近に設定されている。
113、114 共振器端面
115、118 密着層
116、117 端面コート膜
Claims (3)
- 窒化物半導体層と、該窒化物半導体層に形成された電極と、該窒化物半導体層に形成された共振器と、該共振器の端面に形成された密着層と該密着層上に形成された端面コート膜とを備えた窒化物半導体レーザ素子において、
前記密着層と前記窒化物半導体層は六方晶の結晶からなり、
前記密着層はAlNであり、
前記端面コート膜はAl 2 O 3 であることを特徴とする窒化物半導体レーザ素子。 - 前記密着層及び前記端面コート膜間に、AlN x O y (x<1、y<1、x+y=1)が存在することを特徴とする請求項1に記載の窒化物半導体レーザ素子。
- 前記密着層を室温以上200℃以下の温度で成膜することを特徴とする請求項1または2に記載の窒化物半導体レーザ素子。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005298361A JP4451371B2 (ja) | 2004-12-20 | 2005-10-13 | 窒化物半導体レーザ素子 |
US11/311,138 US7701994B2 (en) | 2004-12-20 | 2005-12-20 | Nitride semiconductor light-emitting device and method for fabrication thereof |
CN 200510136195 CN1805230B (zh) | 2004-12-20 | 2005-12-20 | 氮化物半导体发光元件及其制造方法 |
CN201110082164.XA CN102170090B (zh) | 2004-12-20 | 2005-12-20 | 氮化物半导体发光元件 |
US12/659,149 US7820542B2 (en) | 2004-12-20 | 2010-02-26 | Nitride semiconductor light-emitting device and method for fabrication thereof |
US12/923,334 US8129732B2 (en) | 2004-12-20 | 2010-09-15 | Nitride semiconductor light-emitting device and method for fabrication thereof |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004367005 | 2004-12-20 | ||
JP2005298361A JP4451371B2 (ja) | 2004-12-20 | 2005-10-13 | 窒化物半導体レーザ素子 |
Related Child Applications (1)
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JP2009143037A Division JP2009206526A (ja) | 2004-12-20 | 2009-06-16 | 窒化物半導体発光素子の製造方法 |
Publications (3)
Publication Number | Publication Date |
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JP2006203162A JP2006203162A (ja) | 2006-08-03 |
JP2006203162A5 JP2006203162A5 (ja) | 2009-02-05 |
JP4451371B2 true JP4451371B2 (ja) | 2010-04-14 |
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JP2005298361A Active JP4451371B2 (ja) | 2004-12-20 | 2005-10-13 | 窒化物半導体レーザ素子 |
Country Status (3)
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US (3) | US7701994B2 (ja) |
JP (1) | JP4451371B2 (ja) |
CN (1) | CN102170090B (ja) |
Cited By (2)
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JP2007103814A (ja) * | 2005-10-07 | 2007-04-19 | Sharp Corp | 窒化物半導体発光素子およびその製造方法 |
JP2012044230A (ja) * | 2011-11-30 | 2012-03-01 | Sharp Corp | 窒化物半導体発光素子 |
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JP5285835B2 (ja) * | 2005-07-13 | 2013-09-11 | 株式会社東芝 | 半導体素子およびその製造方法 |
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2005
- 2005-10-13 JP JP2005298361A patent/JP4451371B2/ja active Active
- 2005-12-20 US US11/311,138 patent/US7701994B2/en active Active
- 2005-12-20 CN CN201110082164.XA patent/CN102170090B/zh active Active
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2010
- 2010-02-26 US US12/659,149 patent/US7820542B2/en active Active
- 2010-09-15 US US12/923,334 patent/US8129732B2/en active Active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007103814A (ja) * | 2005-10-07 | 2007-04-19 | Sharp Corp | 窒化物半導体発光素子およびその製造方法 |
JP2012044230A (ja) * | 2011-11-30 | 2012-03-01 | Sharp Corp | 窒化物半導体発光素子 |
Also Published As
Publication number | Publication date |
---|---|
US7701994B2 (en) | 2010-04-20 |
US7820542B2 (en) | 2010-10-26 |
CN102170090A (zh) | 2011-08-31 |
US8129732B2 (en) | 2012-03-06 |
US20060133442A1 (en) | 2006-06-22 |
US20110007770A1 (en) | 2011-01-13 |
JP2006203162A (ja) | 2006-08-03 |
CN102170090B (zh) | 2013-04-03 |
US20100159626A1 (en) | 2010-06-24 |
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