JP2006203162A - 窒化物半導体発光素子およびその製造方法 - Google Patents
窒化物半導体発光素子およびその製造方法 Download PDFInfo
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- JP2006203162A JP2006203162A JP2005298361A JP2005298361A JP2006203162A JP 2006203162 A JP2006203162 A JP 2006203162A JP 2005298361 A JP2005298361 A JP 2005298361A JP 2005298361 A JP2005298361 A JP 2005298361A JP 2006203162 A JP2006203162 A JP 2006203162A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/0014—Measuring characteristics or properties thereof
- H01S5/0021—Degradation or life time measurements
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
- H01S5/0281—Coatings made of semiconductor materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
- H01S5/0282—Passivation layers or treatments
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
Abstract
【解決手段】III−V族窒化物半導体層を有した窒化物半導体レーザバー100の前面側の共振器端面113に、六方晶の結晶からなる密着層115を積層し、密着層115に端面コート膜116を積層し、同様に背面側の共振器端面114にも六方晶半導体層からなる密着層118を積層し、密着層118に端面コート膜117を積層した構成とする。
【選択図】図4
Description
膜116)を順次成膜する。単層のSiO2の厚さは反射率が5%になるように3λ/4n(λ:発振波長、n:屈折率)付近に設定されている。
113、114 共振器端面
115、118 密着層
116、117 端面コート膜
Claims (15)
- III−V族窒化物半導体層と、前記III−V族窒化物半導体層に設けられた共振器と、前記共振器の端面に形成された端面コート膜とを備えた窒化物半導体発光素子において、
前記共振器の端面と前記端面コート膜との間に六方晶の結晶からなる密着層を設けたことを特徴とする窒化物半導体発光素子。 - 前記密着層は、前記共振器の光出射端面と前記端面コート膜との間に設けたことを特徴とする請求項1記載の窒化物半導体発光素子。
- 前記密着層の層厚が20nm以下であることを特徴とする請求項1又は2記載の窒化物半導体発光素子。
- 前記密着層がZnOであることを特徴とする請求項1〜3の何れかに記載の窒化物半導体発光素子。
- 前記密着層がAlN、GaN、又はBNであることを特徴とする請求項1〜3の何れかに記載の窒化物半導体発光素子。
- 前記端面コート膜が酸化物を含んでなることを特徴とする請求項1〜5の何れかに記載の窒化物半導体発光素子。
- 前記酸化物は、Al、Si、Ti、Hf、Nb、Ta、Zrの何れかの酸化物の単層、又は何れかの酸化物の層を含む多層構造であることを特徴とする請求項6記載の窒化物半導体発光素子。
- 前記端面コート膜が窒化物であることを特徴とする請求項5記載の窒化物半導体発光素子。
- 前記端面コート膜がSiの窒化物の単層、またはSiの窒化物と酸化物の多層構造であることを特徴とする請求項4又は5記載の窒化物半導体発光素子。
- 前記密着層がAlの窒化物であり、前記端面コート膜がAlの酸化物であることを特徴とする1〜3の何れかにに記載の窒化物半導体素子。
- 前記密着層がマグネトロンスパッタリング法、プラズマCVD法、又はECRスパッタリング法で作製されることを特徴とする請求項1〜10の何れかに記載の窒化物半導体発光素子。
- III−V族窒化物半導体層を形成する工程と、前記III−V族窒化物半導体層を劈開することにより前記III−V族窒化物半導体層共振器を形成する工程と、劈開によって形成された前記共振器の端面を不活性ガスによってとクリーニングする工程と、クリーニングを完了した前記共振器の端面に窒化アルミニウムからなる層を形成する工程と、前記窒化アルミニウムからなる層の表面に端面コート膜を形成する工程とを有することを特徴とする窒化物半導体発光素子の製造方法。
- 前記不活性ガスが希ガスであることを特徴とする請求項12に記載の窒化物半導体発光素子の製造方法。
- 前記不活性ガスがArガスであることを特徴とする請求項12に記載の窒化物半導体発光素子の製造方法。
- 前記不活性ガスが窒素ガスであることを特徴とする請求項12に記載の窒化物半導体発光素子の製造方法。
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JP2005298361A JP4451371B2 (ja) | 2004-12-20 | 2005-10-13 | 窒化物半導体レーザ素子 |
CN 200510136195 CN1805230B (zh) | 2004-12-20 | 2005-12-20 | 氮化物半导体发光元件及其制造方法 |
US11/311,138 US7701994B2 (en) | 2004-12-20 | 2005-12-20 | Nitride semiconductor light-emitting device and method for fabrication thereof |
CN201110082164.XA CN102170090B (zh) | 2004-12-20 | 2005-12-20 | 氮化物半导体发光元件 |
US12/659,149 US7820542B2 (en) | 2004-12-20 | 2010-02-26 | Nitride semiconductor light-emitting device and method for fabrication thereof |
US12/923,334 US8129732B2 (en) | 2004-12-20 | 2010-09-15 | Nitride semiconductor light-emitting device and method for fabrication thereof |
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Also Published As
Publication number | Publication date |
---|---|
CN102170090A (zh) | 2011-08-31 |
US20060133442A1 (en) | 2006-06-22 |
JP4451371B2 (ja) | 2010-04-14 |
US20100159626A1 (en) | 2010-06-24 |
CN102170090B (zh) | 2013-04-03 |
US7820542B2 (en) | 2010-10-26 |
US7701994B2 (en) | 2010-04-20 |
US20110007770A1 (en) | 2011-01-13 |
US8129732B2 (en) | 2012-03-06 |
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