DE69115378T2 - Verfahren zur Herstellung eines Halbleiterlasers - Google Patents

Verfahren zur Herstellung eines Halbleiterlasers

Info

Publication number
DE69115378T2
DE69115378T2 DE69115378T DE69115378T DE69115378T2 DE 69115378 T2 DE69115378 T2 DE 69115378T2 DE 69115378 T DE69115378 T DE 69115378T DE 69115378 T DE69115378 T DE 69115378T DE 69115378 T2 DE69115378 T2 DE 69115378T2
Authority
DE
Germany
Prior art keywords
manufacturing
semiconductor laser
laser
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69115378T
Other languages
English (en)
Other versions
DE69115378D1 (de
Inventor
Mitsuhiro Matsumoto
Kazuaki Sasaki
Masaki Kondo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of DE69115378D1 publication Critical patent/DE69115378D1/de
Application granted granted Critical
Publication of DE69115378T2 publication Critical patent/DE69115378T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/164—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising semiconductor material with a wider bandgap than the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0281—Coatings made of semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0282—Passivation layers or treatments
DE69115378T 1990-08-01 1991-08-01 Verfahren zur Herstellung eines Halbleiterlasers Expired - Fee Related DE69115378T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2205507A JP2680917B2 (ja) 1990-08-01 1990-08-01 半導体レーザ素子の製造方法

Publications (2)

Publication Number Publication Date
DE69115378D1 DE69115378D1 (de) 1996-01-25
DE69115378T2 true DE69115378T2 (de) 1996-06-05

Family

ID=16508010

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69115378T Expired - Fee Related DE69115378T2 (de) 1990-08-01 1991-08-01 Verfahren zur Herstellung eines Halbleiterlasers

Country Status (4)

Country Link
US (1) US5171706A (de)
EP (1) EP0469900B1 (de)
JP (1) JP2680917B2 (de)
DE (1) DE69115378T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10323860A1 (de) * 2003-03-28 2004-11-11 Osram Opto Semiconductors Gmbh Halbleiterlaservorrichtung und Herstellungsverfahren

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5358898A (en) * 1989-07-15 1994-10-25 Fujitsu Limited Method of making a tunable laser diode having a distributed feedback structure
US5413956A (en) * 1992-03-04 1995-05-09 Sharp Kabushiki Kaisha Method for producing a semiconductor laser device
EP0637862A3 (de) * 1993-08-05 1995-05-24 Hitachi Ltd Halbleiterlaservorrichtung und Herstellungsverfahren.
JPH07111357A (ja) * 1993-10-05 1995-04-25 Mitsubishi Electric Corp 半導体レーザの製造方法
BE1007661A3 (nl) * 1993-10-18 1995-09-05 Philips Electronics Nv Werkwijze ter vervaardiging van een straling-emitterende halfgeleiderdiode.
US5814533A (en) * 1994-08-09 1998-09-29 Rohm Co., Ltd. Semiconductor light emitting element and manufacturing method therefor
JP3734849B2 (ja) * 1995-05-08 2006-01-11 三菱電機株式会社 半導体レーザ装置の製造方法
US5684319A (en) * 1995-08-24 1997-11-04 National Semiconductor Corporation Self-aligned source and body contact structure for high performance DMOS transistors and method of fabricating same
DE19537545A1 (de) * 1995-10-09 1997-04-10 Telefunken Microelectron Verfahren zur Herstellung einer Lumineszenzdiode
US5668049A (en) * 1996-07-31 1997-09-16 Lucent Technologies Inc. Method of making a GaAs-based laser comprising a facet coating with gas phase sulphur
JPH10223992A (ja) * 1997-01-31 1998-08-21 Oki Electric Ind Co Ltd 半導体素子製造方法
JPH10242557A (ja) * 1997-02-21 1998-09-11 Sony Corp 半導体発光装置の製造方法
KR100767658B1 (ko) * 2000-05-04 2007-10-17 엘지전자 주식회사 질화물 발광소자 제조 방법
DE60238195D1 (de) * 2001-05-31 2010-12-16 Nichia Corp Halbleiterlaserelement
JP2003195082A (ja) * 2001-12-26 2003-07-09 Hitachi Cable Ltd 溝部の形成方法および光導波路素子の製造方法
EP1520329A2 (de) * 2002-06-26 2005-04-06 AMMONO Sp.z o.o. Nitrid halbleiterlaservorrichtung und verfahren zur leistungsverbesserung
US20070254111A1 (en) * 2006-04-26 2007-11-01 Lineton Warran B Method for forming a tribologically enhanced surface using laser treating

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5946113A (ja) * 1982-09-06 1984-03-15 Mitsubishi Heavy Ind Ltd ガス処理装置のシ−ル方法
JPS6058692A (ja) * 1983-09-12 1985-04-04 Nec Corp 半導体レ−ザ素子の製造方法
JPS61265888A (ja) * 1985-05-20 1986-11-25 Nec Corp 半導体レ−ザの製造方法
JPS62238678A (ja) * 1986-04-09 1987-10-19 Fujitsu Ltd 半導体発光装置
US4751201A (en) * 1987-03-04 1988-06-14 Bell Communications Research, Inc. Passivation of gallium arsenide devices with sodium sulfide
JP2740170B2 (ja) * 1987-08-06 1998-04-15 日本電気株式会社 半導体レーザの共振器製造方法
US4843037A (en) * 1987-08-21 1989-06-27 Bell Communications Research, Inc. Passivation of indium gallium arsenide surfaces
US4871692A (en) * 1988-09-30 1989-10-03 Lee Hong H Passivation of group III-V surfaces
DE69033959T2 (de) * 1989-02-03 2002-10-31 Sharp Kk Halbleiterlaser-Vorrichtung und Verfahren zu ihrer Herstellung

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10323860A1 (de) * 2003-03-28 2004-11-11 Osram Opto Semiconductors Gmbh Halbleiterlaservorrichtung und Herstellungsverfahren

Also Published As

Publication number Publication date
JP2680917B2 (ja) 1997-11-19
EP0469900A3 (en) 1992-04-15
JPH0491484A (ja) 1992-03-24
DE69115378D1 (de) 1996-01-25
EP0469900A2 (de) 1992-02-05
EP0469900B1 (de) 1995-12-13
US5171706A (en) 1992-12-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: PATENTANWAELTE MUELLER & HOFFMANN, 81667 MUENCHEN

8339 Ceased/non-payment of the annual fee