DE69124173D1 - Verfahren zur Herstellung eines Halbleiterlasers - Google Patents
Verfahren zur Herstellung eines HalbleiterlasersInfo
- Publication number
- DE69124173D1 DE69124173D1 DE69124173T DE69124173T DE69124173D1 DE 69124173 D1 DE69124173 D1 DE 69124173D1 DE 69124173 T DE69124173 T DE 69124173T DE 69124173 T DE69124173 T DE 69124173T DE 69124173 D1 DE69124173 D1 DE 69124173D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- semiconductor laser
- laser
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
- H01S5/164—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising semiconductor material with a wider bandgap than the active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
- H01S5/162—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions made by diffusion or disordening of the active layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/095—Laser devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/16—Superlattice
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24501790 | 1990-09-13 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69124173D1 true DE69124173D1 (de) | 1997-02-27 |
DE69124173T2 DE69124173T2 (de) | 1997-05-22 |
Family
ID=17127339
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69124173T Expired - Fee Related DE69124173T2 (de) | 1990-09-13 | 1991-08-23 | Verfahren zur Herstellung eines Halbleiterlasers |
Country Status (4)
Country | Link |
---|---|
US (1) | US5171707A (de) |
EP (1) | EP0475618B1 (de) |
CA (1) | CA2051254C (de) |
DE (1) | DE69124173T2 (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06302906A (ja) * | 1993-04-12 | 1994-10-28 | Mitsubishi Electric Corp | 半導体レーザ及びその製造方法 |
JP3115775B2 (ja) * | 1994-11-16 | 2000-12-11 | 三菱電機株式会社 | 半導体レーザの製造方法 |
JP3734849B2 (ja) * | 1995-05-08 | 2006-01-11 | 三菱電機株式会社 | 半導体レーザ装置の製造方法 |
DE19926958B4 (de) * | 1999-06-14 | 2008-07-31 | Osram Opto Semiconductors Gmbh | Lichtemissions-Halbleiterdiode auf der Basis von Ga (In, AL) P-Verbindungen mit ZnO-Fensterschicht |
GB2351390A (en) * | 1999-06-16 | 2000-12-27 | Sharp Kk | A semiconductor material comprising two dopants |
DE102007058950A1 (de) | 2007-09-28 | 2009-04-02 | Osram Opto Semiconductors Gmbh | Kantenemittierender Halbleiterlaser mit einem Wellenleiter |
EP2043209B1 (de) | 2007-09-28 | 2011-10-26 | OSRAM Opto Semiconductors GmbH | Kantenemittierender Halbleiterlaser mit einem Wellenleiter |
DE102007062050B4 (de) * | 2007-09-28 | 2019-06-27 | Osram Opto Semiconductors Gmbh | Halbleiterlaser und Verfahren zum Herstellen des Halbleiterlasers |
JP6507912B2 (ja) * | 2015-07-30 | 2019-05-08 | 三菱電機株式会社 | 半導体受光素子 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60101989A (ja) * | 1983-11-08 | 1985-06-06 | Nippon Telegr & Teleph Corp <Ntt> | 半導体レ−ザ及びその製造方法 |
JPS6472582A (en) * | 1987-09-11 | 1989-03-17 | Fujitsu Ltd | Window stripe quantum well laser |
JPH02159082A (ja) * | 1988-12-12 | 1990-06-19 | Mitsubishi Electric Corp | 半導体レーザの製造方法 |
JP2831667B2 (ja) * | 1988-12-14 | 1998-12-02 | 株式会社東芝 | 半導体レーザ装置及びその製造方法 |
JPH02196486A (ja) * | 1989-01-24 | 1990-08-03 | Mitsubishi Electric Corp | 半導体レーザの製造方法 |
JPH0332084A (ja) * | 1989-06-29 | 1991-02-12 | Nec Corp | 半導体レーザの製造方法 |
-
1991
- 1991-08-13 US US07/744,446 patent/US5171707A/en not_active Expired - Fee Related
- 1991-08-23 EP EP91307766A patent/EP0475618B1/de not_active Expired - Lifetime
- 1991-08-23 DE DE69124173T patent/DE69124173T2/de not_active Expired - Fee Related
- 1991-09-12 CA CA002051254A patent/CA2051254C/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0475618B1 (de) | 1997-01-15 |
CA2051254C (en) | 1995-02-14 |
US5171707A (en) | 1992-12-15 |
EP0475618A3 (en) | 1992-05-06 |
DE69124173T2 (de) | 1997-05-22 |
EP0475618A2 (de) | 1992-03-18 |
CA2051254A1 (en) | 1992-03-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69115198D1 (de) | Verfahren zur Herstellung eines Halbleiterlasers. | |
DE69435114D1 (de) | Verfahren zur Herstellung eines Halbleiterbauelements | |
DE69332511D1 (de) | Verfahren zur Herstellung eines Halbleitersubstrats | |
DE69333282D1 (de) | Verfahren zur Herstellung eines Halbleitersubstrats | |
DE3853778D1 (de) | Verfahren zur Herstellung eines Halbleiterbauelements. | |
DE69118065D1 (de) | Oberflächenemittierender Halbleiterlaser und Verfahren zu seiner Herstellung | |
DE3483444D1 (de) | Verfahren zur herstellung eines halbleiterbauelementes. | |
DE69228349D1 (de) | Verfahren zur Herstellung eines Halbleitersubstrats | |
DE69023956D1 (de) | Verfahren zur Herstellung eines III-V-Verbindungshalbleiterbauelementes. | |
DE69029430D1 (de) | Verfahren zur Herstellung eines CMOS Halbleiterbauelements | |
DE69514201D1 (de) | Verfahren zur Herstellung eines Halbleiterbauelements | |
DE69218611D1 (de) | Verfahren zur herstellung eines halbleiter-beschleunigungsmessers | |
DE69606478D1 (de) | Verfahren zur herstellung eines halbleiterbauteils mit bicmos schaltkreis | |
DE69018558D1 (de) | Verfahren zur Herstellung eines Halbleiterlasers. | |
DE69110726D1 (de) | Verfahren zur Herstellung eines Halbleiterlasers. | |
DE19758977B8 (de) | Verfahren zur Herstellung eines Halbleiterbauelements | |
DE69115378D1 (de) | Verfahren zur Herstellung eines Halbleiterlasers | |
DE69112545D1 (de) | Verfahren zur Herstellung eines Halbleiterbauelementes. | |
DE69434695D1 (de) | Verfahren zur Herstellung einer Halbleiteranordnung | |
DE59009414D1 (de) | Verfahren zur Herstellung eines Laserwafers. | |
DE69231777D1 (de) | Verfahren zur Herstellung eines Halbleitersubstrats | |
DE69215160D1 (de) | Verfahren zur Herstellung eines abstimmbaren Halbleiterlasers | |
DE69031712D1 (de) | Verfahren zur Herstellung eines Halbleiterbauelementes | |
DE69110286D1 (de) | Verfahren zur herstellung eines überzuges. | |
DE69120865D1 (de) | Verfahren zur Herstellung eines Halbleiterbauelements |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |